D. Sing

Freescale Semiconductors, Inc, Austin, Texas, United States

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Publications (12)1.27 Total impact

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    ABSTRACT: In this paper we demonstrate for the first time a novel CMOS IT-FET (inverted T channel FET) architecture. We demonstrate well functional ITFET SRAM bit-cells. Vertical devices such as FinFET and planar ultra thin body devices have been shown to exhibit good short channel control and proposed for future device scaling. The ITFET is novel device architecture that takes advantage of both vertical and horizontal thin-body devices. A doped channel IT-FET process has been developed and is the focus of this paper. This technology can be scaled beyond 45nm technologies using undoped channels. An ITFET device comprises of an ultra thin body planar horizontal channels and vertical channels in a single device. The devices have multi-gate control around these channels to improve short channel control. A single device has multiple orientations and hence mobility enhancement of both (110) and (100) planes can be used optimally. The devices presented have 15nm planar horizontal thin body and 40nm vertical channels of 100nm height, 17Aring gate dielectric and 50nm gate length. These devices are especially useful in circuits that need ratioing such as in SRAM cells and a well functional SRAM cell is demonstrated
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006
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    ABSTRACT: Using a novel fluorinated Ta<sub>x</sub>C<sub>y</sub>/high-k gate stack, we show breakthrough device reliability and performance improvements. This is a critical result since threshold voltage instability may be a fundamental problem and performance degradation for high-k is a concern. The novel fluorinated gate stack device exceeds the PBTI and NBTI targets with sufficient margin and has electron mobility comparable to the best polySi/SiON device on bulk Si reported so far
    Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006
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    ABSTRACT: The ITFET is novel device architecture; it offers significant advantages over planar and FinFET technologies. The ITFET uses traditional CMOS processing technologies and can be rapidly inserted into existing SOI process flows. Doped channel ITFET devices have been demonstrated future work will include undoped channel ITFET devices. Simulated performances of the ITFET devices predict these devices can meet the 45nm and 32nm device performance. This transistor architecture offers device, process and application advantages
    Integrated Circuit Design and Technology, 2006. ICICDT '06. 2006 IEEE International Conference on; 01/2006
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    ABSTRACT: MIGFET devices have multiple gates to independently control the channel region. This allows for new device architectures and applications. This paper deals with three novel aspects discussed the first time I) Multi-fin MIGFET device with two independent gates capable of high current drives has been fabricated and demonstrated as a RF Mixer II) For the first time a MOSFET with three independent gates has been fabricated. These devices can be used in single transistor memories III) MIGFET has been used to characterize temperature effects on double gate devices in single electrode and independent gate modes. The three aspects discussed in the paper will have significant impact on future applications of these devices. The MIGFET can be integrated with double gate devices enabling novel analog circuits to scale with multi-gated digital CMOS in future digital CMOS transceiver (Single Chip Radio). The third independent gate in the MIGFET-T device enables novel memory architectures. Temperature characterization reveals the double gate Vt can be shifted both by temperature and by the second gate bias. This data enables compact modeling of temperature effects on independent gate devices to evaluate circuits that take advantage of this characteristic of the MIGFET.
    VLSI Technology, 2005. Digest of Technical Papers. 2005 Symposium on; 07/2005
  • D.C. Sing, M.J. Rendon
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    ABSTRACT: Ion Implant process control has changed considerably over the past 10 years. In the mid 1990s ion implant process control could easily be characterized as a daily dose monitor and particle check. However, as devices have shrunk and become faster, the sensitivity to process variations has increased, requiring a much more sophisticated process control strategy. Traditional test wafer based measurements now include periodic verification of implant angle accuracy, charge control system effectiveness, metals contamination, cross contamination and even ion gauge accuracy that are all known to contribute to process variations. In addition to more varied wafer based process verification methods, the introduction of networked data collection systems has now facilitated the ability to provide process monitoring of virtually every implant for every process recipe run. Automated systems can now monitor implant runs and flag possible out of control situations for review by process and equipment engineers, or depending on the severity of the fault, prevent further processing of material while the fault is investigated. Proper fault detection software and implant parameter databases provide process engineers with powerful tools to use for process optimization, interruption and fault elimination and correlation of tool operation parameters with device performance measurements. As fault detection systems are improved, the need for wafer based process control will decrease, although it is debatable that wafer based process control will ever be completely eliminated.
    Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms 01/2005; 237:318-323. · 1.27 Impact Factor
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    ABSTRACT: Perfectly self aligned vertical multiple independent gate field effect transistor (MIGFET) CMOS devices have been fabricated. The unique process used to fabricate these devices allow them to be integrated with FinFET devices. Device and circuit simulations have been used to explain the device and explore new applications using this device. A novel application of the MIGFET as a signal mixer has been demonstrated. The undoped channel, very thin body, perfectly matched gates allows charge coupling of the two signals and provide a new family of applications using the MIGFET mixer. Since the process allows integration of regular CMOS double gate devices and MIGFET devices this technology has potential for various digital and analog mixed-signal applications.
    SOI Conference, 2004. Proceedings. 2004 IEEE International; 11/2004
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    ABSTRACT: Device architectures incorporating multiple gate structures have been proposed to allow transistor scaling beyond the planar MCSFET integrations. These device architectures can improve performance such as better short channel performance and reduced leakage. In addition the additional channel surface and gate electrodes offers new circuit possibilities such as dynamic threshold voltage control and an RF mixer are demonstrated. It is desirable to fabricate multi-gated devices with the single gate on multiple sides and multiple gate electrodes this has been demonstrated successfully.
    Integrated Circuit Design and Technology, 2004. ICICDT '04. International Conference on; 02/2004
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    ABSTRACT: A vertical double gate MOSFET structure with a new gate stack architecture has been demonstrated. The gate stack consists of two isolated polysilicon regions that are doped N+ and P+ with a metal/polysilicon strap connecting the doped regions. The device has an undoped channel yet performs as an enhancement mode MOSFET due to the asymetric doping of the gate regions on either side of the channel. The advantages of this structure include: 1) reduction of the Vt variations caused by dopant fluctuation in the channel region; 2) enhanced mobility due to an undoped channel region; 3) flexibility to adjust Vt across a wide range from depletion mode to very high Vt depending on the application; 4) lower interconnect resistance due to the use of metal/polysilicon gate components; 5) better manufacturability due to easier patterning of gate over spacer. The devices are enhancement mode with Vt ∼=(0.1-0.3V) at 100 nm gate length and channel thickness of less than 30 nm gate length and height 100 nm tall have been demonstrated. Functional devices at the 100 nm gate have Ion=191 μA/μm, Vt=0.3 V Ioff =0.5 μA/μm, SS=94 mV/decade. A different device with different implant dose and drive demonstrated Vt=0.15 V and SS=80mV/decade at Lgate=0.25 μm.
    SOI Conference, 2003. IEEE International; 01/2003
  • M.J. Rendon, D.C. Sing
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    ABSTRACT: As the level of tool automation and the amount of data collected during processes continues to increase, the need for placing those tools on the fab's intranet also increases. It is possible for modern batch implanters to process between 8,000 and 12,000 runs per month. Each batch generates several files including parameter logs and associated alarm histories. Data storage, archiving and review can become an issue with this much data. In this paper we discuss how placing implant equipment on the fab's network not only solved trivial storage space issues, but enabled the replacement of faulty tape backup systems, and facilitated the ability to remotely view and download files such as implant data logs (IDLs), alarm histories, and configuration files. Modern implant tools often use workstations running operating systems that are capable of being connected to a fab's network. Once the process tools are connected, background routines can be written to perform the tracking of tool configuration changes and automatic checking of recipe files for errors. Routines can also be written to compress the IDL files into a database providing the foundation for advanced process control based on automatic IDL review. Automated review of configuration files, recipes, and IDL's improves fault detection and ultimately results in reducing scrap and improving tool utilization and productivity.
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on; 10/2002
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    ABSTRACT: Data mining techniques have been introduced to the semiconductor industry in recent years. In this paper, we report on progress in developing a network based implant data log (IDL) data analysis system which can be used to access data from multiple tools and multiple recipes. The system that is currently under development can be used to generate individual control charts from any of over 100 process variables for a user selectable process recipe or from all implants in the database. Multi-variable models are being developed to compare relationships among process variables. These models calculate predicted values of process variables, and the differences between the model and the actual variables are used as indicators of process drift, hardware malfunctions, recipe integrity, and in some cases mis-processing.
    Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on; 10/2002
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    ABSTRACT: It was shown recently that co-implantation of fluorine with boron limits boron transient enhanced diffusion. This effect was shown to be a chemical species effect by eliminating extraneous damage effects through the use of pre-amorphized silicon. However, the nature of the fluorine interaction with boron remained in question. In order to answer this question, a series of experiments have been performed. Amorphization of a n-type Czochralski wafer was achieved with a 70 keV Si<sup>+</sup> implantation at a dose of 1×10<sup>15</sup>/cm<sup>2</sup>. The Si <sup>+</sup> implant produced a 1400Å deep amorphous layer, which was then implanted with a 1×10<sup>15</sup>/cm<sup>2</sup> B<sup>+ </sup> dose at an energy of either 1.1 keV or 500 eV. The samples were then implanted with a dose of 2×10<sup>15</sup>/cm<sup>2</sup> F <sup>+</sup> at various energies ranging from 2 keV to 36 keV. By varying the F<sup>+</sup> energy it was possible to change the position and concentration of the fluorine relative to the boron and the end-of-range interstitial source. After annealing at 550°C, 750° C, and 1050°C the wafers were analyzed by secondary ion mass spectrometry (SIMS), transmission electron microscopy (TEM). Fluorine co-implantation with boron causes the diffusion of boron to exhibit two stages of diffusion during time frame that the control sample exhibits transient enhanced diffusion. The results from this experiment and supporting experiments suggest the fluorine is reducing the TED of the boron by trapping silicon interstitials
    Junction Technology, 2001. IWJT. Extended Abstracts of the Second International Workshop on; 02/2001
  • D. Sing, M. Rendon
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    ABSTRACT: The Axcelis GSD/HE class of Ion Implanters uses a radio frequency (RF) linear accelerator (LINAC) to provide the final acceleration to the extracted ions. The process of recipe creation on this tool often requires the modification of LINAC datasets which specify the RF voltage amplitude and phase as well as the focusing quadrupole lens voltage of the 10 to 14 RF cavities and lens assemblies. LINAC datasets are uniquely specified by the ion species, ion charge, extraction voltage, final energy, and beam current. The creation of a new dataset for a new final energy can be difficult because a change to the amplitude or phase of any given resonator changes the interaction of the beam with all subsequent downstream resonators. LINAC datasets are often created which make inefficient use of the RF voltage, with phase and amplitude combinations which can result in both acceleration and deceleration at various stages in the LINAC. Poor datasets can result in poor beam transmission efficiency and shorten the life of RF amplifiers which are being driven at unnecessarily high RF voltages. The FEM spectrum tool sweeps the magnetic field of the final energy magnet (FEM) and records the beam current exiting the FEM as a function of the magnet current. We have developed a method to evaluate the efficiency of LINAC datasets by utilizing the built in FEM spectrum capabilities of the tool. By turning off RF resonators starting at the end of the LINAC and using the FEM spectrum tool the energy evolution of the beam as it passes from one resonator to another can be directly measured. The effectiveness of a given RF cavity is then evaluated by computing the acceleration efficiency defined as the energy gain produced by the resonator divided by the resonator Rf. By dissecting the dataset in this manner resonators are often found to add no additional energy, or in some instances decelerate the beam. The characteristics of efficient datasets such as phase shifts from resonator to resonator can be identified which aid in creation of new datasets and the improvement of existing datasets
    Ion Implantation Technology, 2000. Conference on; 02/2000