[Show abstract][Hide abstract] ABSTRACT: A multi-channel RX for automotive radar applications at 76.5 GHz is presented. The chip uses a LO input signal at 38.25 GHz which is multiplied on chip. The single-ended IF outputs show a noise density of -143 dBm/Hz at 100 kHz with a typical conversion gain of 18 dB. The large signal IF channel-to-channel isolation is > 55 dB. The 14 mm<sup>2</sup> chip consumes 520 mA from +3.3 V supply in a 200 GHz f<sub>T</sub> SiGe BiCMOS process.
[Show abstract][Hide abstract] ABSTRACT: Advancements in SiGe device development enable the realization of 76.5 GHz FMCW automotive long range radar systems using relatively low-cost silicon technology. This paper presents fully integrated receiver (RX) and transmitter (TX) circuits for wide temperature range operations. The TX chips consists of a VCO with two stage power amplifier, frequency divider chain, power detector circuit and operational amplifier to on-chip compensate the temperature drift of the center frequency. The RX chips is based on a 38.25 GHz doubler, a 76.5 GHz LNA, a passive balun, a fully balanced mixer and IF buffer. Also the integration and combination with planar patched antennas on a demonstrator board was discussed.
[Show abstract][Hide abstract] ABSTRACT: Recent advancements in SiGe device development enable the realization of 77GHz automotive long range radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and present examples of receiver and transmitter circuit implementations.
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on; 06/2007
[Show abstract][Hide abstract] ABSTRACT: In this paper, we report the performance and reliability of sub-100nm TaSiN metal gate fully depleted SOI devices with high-k gate dielectric. Performance differences between fully-depleted and partially-depleted devices are highlighted. This is also the first time that an unique asymmetric degradation phenomenon between electron and hole mobility in metal/high-k devices is reported. Despite the use of high-k dielectric, we show that these devices exhibit superior reliability, noise and analog circuit performances.
[Show abstract][Hide abstract] ABSTRACT: We report for the first time, the digital and analog performance of sub-100nm Fully-Depleted Silicon-On-Insulator (SOI) n and p-MOSFETs using TaSiN gate and HfO<sub>2</sub> dielectric with elevated Source/Drain (SD) extensions. As CMOS technology continues to scale down, the FDSOI technology offers a potential solution to control short channel effects by reducing the silicon film thickness and a concurrent scaling of the buried oxide thickness. The use of metal gate and thin undoped body offer the additional advantages of 1) suppression of polysilicon depletion effects, 2) elimination of boron penetration, 3) minimizing S/D junction capacitance (Cj), and 4) enhancing transistor matching performance for mixed signal application. High k dielectric is necessary to reduce gate leakage for EOT below 15 to 20Å. The intrinsic low-leakage nature of the FDSOI device and it's immunity to floating body effect provides much opportunity for ultra-low power digital and analog applications. Physical and electrical analyses of the devices are presented to provide an assessment of the metal gates on high K gate dielectric in combination with fully-depleted device operation in the context of digital and analog circuits.
[Show abstract][Hide abstract] ABSTRACT: A fully modular 0.18 μm SiGe:C RFBiCMOS technology is described
which has been developed for wireless and gigabit optical communication
applications. This technology is based upon a 0.18 μm low-power CMOS
platform with dual gate oxide MOS devices and 5 layers of Cu
metallization. Low Vt CMOS, isolated NMOS, analog BJT and high quality
passive devices are integrated for mixed signal and RFCMOS design
capability. In addition, a SiGe:C HBT device is integrated for high
frequency, low power and low noise RFBiCMOS applications. This
technology is supported by digital and analog libraries including 1/f
noise & matching characterization, parasitic extraction and memory
compilation to fully enable complex mixed-signal system designs
Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001; 02/2001