S. Bernet
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ABSTRACT: The introduction of new high power devices like integrated gate
commutated thyristors (IGCTs) and high voltage insulated gate bipolar
transistors (IGBTs) accelerates the broad use of pulse width modulation
(PWM) voltage source converters in industrial and traction applications.
This paper summarizes the state-of-the-art of power semiconductors. The
characteristics of IGCTs and high voltage IGBTs are described in detail.
Both the design and loss simulations of a two level 1.14 MVA voltage
source inverter and a 6 MVA three-level neutral point clamped voltage
source converter with active front end enable a detailed comparison of
both power semiconductors for high power PWM converters. The design and
the characteristics of a commercially available IGCT neutral point
clamped PWM voltage source converter for medium voltage drives are
discussed. Recent developments and trends of traction converters at DC
mains and AC mains are summarized
IEEE Transactions on Power Electronics 12/2000; · 4.65 Impact Factor
