Bin Le Do

Publications (1)0 Total impact

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  Available from: Jules Galipaud

  Article: Epitaxial growth and properties of GdN, EuN and SmN thin films

  Franck Natali, Bart Ludbrook, Jules Galipaud, Natalie Plank, Simon Granville, Andrew Preston, Bin Le Do, Jan Richter, Ian Farrell, Roger Reeves, Steve Durbin, Joe Trodahl, Ben Ruck
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  ABSTRACT: p s s current topics in solid state physics c status solidi www.pss-c.com This paper contains a summary of selected aspects of the epitaxial growth of rare-earth nitride thin films and the recent progress achieved in this field. The discussion is focussed on GdN, SmN, EuN compounds grown by both pulsed laser deposition and molecular beam epitaxy on different substrates including YSZ (001), c-plane (0001) AlN and GaN. While a N 2 plasma cell is used as a nitro-gen source for growing EuN, we take advantage of the catalytic breakdown of molecular nitrogen by rare-earth atoms to grow GdN and SmN in the absence of activated N 2 . The structural, magnetic and transport properties of the thin films are assessed by reflection high-energy elec-tron diffraction, x-ray diffraction, Hall Effect, tempera-ture-dependent magnetization and resistivity.
  physica status solidi (c) 09/2011;