T. Ouisse

University of Grenoble, Grenoble, Rhône-Alpes, France

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Publications (129)220.3 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: Single-crystalline platelets of the nanolaminated V2AlC phase have been produced by high-temperature solution growth followed by a slow cooling process, with areas ranging from a few mm2 up to almost 1 cm2. Structural characterization confirms the single-crystalline character of the samples. The surface morphology of the V2AlC crystals is flat and devoid of dendrites. Well-defined steps and terraces indicate a step flow growth process. Emphasis is put on the mechanical cleavage of the samples which can be achieved in the basal plane thanks to the existence of the weakly bonded Al atomic planes. The cleavage surface exhibits terraces ending with a triangular shape and with a height equal to an integer number of half-lattice units.
    Acta Materialia 01/2015; 83. DOI:10.1016/j.actamat.2014.10.018 · 4.47 Impact Factor
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    ABSTRACT: We use the rotating polarizer birefringence technique to investigate the properties of dislocations in single crystalline diamond produced by a high pressure high temperature (HPHT) process or by microwave plasma assisted chemical vapor deposition (MPACVD). The birefringence pattern of individual dislocations is measured and modeled. Although the combination of experiment and simulation does not permit identification of the Burgers vector with absolute certainty, the sensitivity is sufficient to show that the detected defects are unit dislocations. In most cases, the patterns are compatible with straight, threading edge, or mixed dislocations with Burgers vectors a/2[110] or a/2[011]. Birefringence microscopy can also be used to probe newly formed defects during the growth of a homoepitaxial layer.
    Crystal Growth & Design 11/2014; 14(11):5761-5766. DOI:10.1021/cg5010193 · 4.56 Impact Factor
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    ABSTRACT: Graphite crucible in seeded sublimation growth of Silicon Carbide (SiC) single crystal does not only act as a container but also as an additional carbon source. The modeling of the growth process integrated with the etching phenomenon caused by the interaction between vapor species and the graphite crucible is shown to be able to predict the shape of the crystal front during the growth. The additional fluxes produced at the graphite part are delivered to the growing crystal mainly at the crystal periphery. The results obtained from the modeling are in good agreement with the experimental ones.
    Materials Science Forum 02/2014; 778-780:31-34. DOI:10.4028/www.scientific.net/MSF.778-780.31
  • Martin Seiss · Thierry Ouisse · Didier Chaussende
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    ABSTRACT: Under specific and reproducible conditions we observed that the top bilayer of a spiral step can detach from the remaining bunched step. This dissociated bilayer is located in the middle of a terrace. In this work we detail the parameters for which the spiral step dissociation appears. Furthermore the possible origins of this effect and the reasons why the dissociated step is located in the center of a terrace are discussed.
    Materials Science Forum 02/2014; 778-780:39-42. DOI:10.4028/www.scientific.net/MSF.778-780.39
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    ABSTRACT: In this paper, an overview of the SiC bulk growth processes is given with a special focus on the most recent results related to growth and modeling. In addition, even if SiC growth is a very old topic and that it is now considered as an « industrial development problem », we will show that there are still many open questions of both fundamental and technological importance related to its crystal growth. Process chemistry and surface mechanisms will be more specifically discussed.
    Materials Science Forum 02/2014; 778-780:3-8. DOI:10.4028/www.scientific.net/MSF.778-780.3
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    ABSTRACT: The numerical modeling of the SiC bulk growth process by physical vapor transport has been established as the essential tool for the process development, especially for understanding and predicting the favorable growth conditions. An accurate computation of mass transfers is strongly dependent on the equilibrium partial pressure calculations. In this paper, we compare the relative impact of the different thermodynamic databases available on the full PVT process modeling. We found that whatever the database used, the trends regarding growth rate calculation, crystal shape, Si/C ratio are correctly described and none of the database would bring about unacceptable errors from the process development point of view even if some discrepancies in the absolute values could be obtained.
    Materials Science Forum 02/2014; 778-780:35-38. DOI:10.4028/www.scientific.net/MSF.778-780.35
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    ABSTRACT: The pseudo-MOSFET (Ψ-MOSFET) method is extended for the electrical characterization of heavily doped (1019–1020 cm−3) SOI wafers with 10–40 nm film thickness. The field-effect modulation is small and does not enable the formation of an inversion channel. Only accumulation and depletion-controlled volume conduction modes are activated by increasing the back-gate voltage to 40 V. An updated model describing the conduction regimes for heavily doped SOI wafers is derived. This model provides a simple method for parameters extraction such as surface and volume mobility and doping level. Four-point probe and Hall effect measurements fully validate our Ψ-MOSFET results. It is found that high-dose implantation results in good redistribution and electrical activation of impurities, without affecting the quality of the buried oxide and Si–SiO2 interface.
    Solid-State Electronics 12/2013; 90:65–72. DOI:10.1016/j.sse.2013.02.050 · 1.51 Impact Factor
  • M. Seiss · T. Ouisse · D. Chaussende
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    ABSTRACT: We have studied the dependence of the terrace width of growth spirals on local supersaturation during the growth of on-axis silicon carbide (SiC) crystals. Local supersaturation is adjusted by changing the residual argon gas pressure inside the sublimation growth chamber. Whereas Si-face crystals seem to partly verify the model of Burton, Cabrera and Frank, we found that on C-face crystals, the terrace width is independent of supersaturation. In contrast to previously reported data obtained from KDP crystals, we cannot ascribe our result to hollow-core dislocations or micropipes, as the observed growth spirals arose from independent and closed, unit or double-unit screw dislocations. Besides, we checked that neither the finite growth area nor the influence of the stress field of the dislocation can explain our data.
    Journal of Crystal Growth 12/2013; 384:129-134. DOI:10.1016/j.jcrysgro.2013.09.022 · 1.69 Impact Factor
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    ABSTRACT: Single crystalline platelets of the nanolaminated Cr2AlC phase have been produced by high temperature solution growth, with typical areas in the range of a few mm2. We present a set of characterization experiments which confirm the single crystalline character of the samples and focus on some specific aspects, all related to the nano-lamellar structure of this material. We show that the crystals can be cleaved or delaminated parallel to the basal plane, and we present atomic force microscope observations of those cleaved surfaces.
    Journal of Crystal Growth 12/2013; 384:88-95. DOI:10.1016/j.jcrysgro.2013.09.021 · 1.69 Impact Factor
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    ABSTRACT: In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
    Physical Review B 10/2013; 88(15). DOI:10.1103/PhysRevB.88.155439 · 3.74 Impact Factor
  • Martin Seiss · Thierry Ouisse · Didier Chaussende
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    ABSTRACT: The growth process of silicon carbide crystals by physical vapor transport (PVT) on Si-face (0001) on-axis 6H-SiC substrates was analyzed. The growth rate was observed to be almost inversely proportional to the deposition pressure (R ∝ p-1) meaning that the growth rate is not limited by the number of growth spirals but by the vapor phase transport of the depositing species from the source to the sample surface. Analysis of the spiral step width shows an inverse square root dependence on the growth rate (y0 ∝ R-½). This experimental result is in accordance with the Burton, Cabrera and Frank theory and hence it can be concluded that there is no back-stress effect present.
    Materials Science Forum 01/2013; 740-742:48-51. DOI:10.4028/www.scientific.net/MSF.740-742.48
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    ABSTRACT: In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: In recent times, trilayer graphene has attracted wide attention owing to its stacking and electric-field-dependent electronic properties. However, a direct and well-resolved experimental visualization of its band structure has not yet been reported. In this paper, we present angle-resolved photoemission spectroscopy data which show with high resolution the electronic band structure of trilayer graphene obtained on α-SiC(0001) and β-SiC(111) via hydrogen intercalation. Electronic bands obtained from tight-binding calculations are fitted to the experimental data to extract the interatomic hopping parameters for Bernal and rhombohedral stacked trilayers. Low-energy electron microscopy measurements demonstrate that the trilayer domains extend over areas of tens of square micrometers, suggesting the feasibility of exploiting this material in electronic and photonic devices. Furthermore, our results suggest that, on SiC substrates, the occurrence of a rhombohedral stacked trilayer is significantly higher than in natural bulk graphite.
  • Le Thi Mai Hoa · T. Ouisse · D. Chaussende
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    ABSTRACT: Using 6H silicon carbide (6H-SiC) wafers including domains with different values of residual stress, the birefringence pattern of threading dislocations is measured and modeled. A quantitative fit of the birefringence pattern makes possible to identify the basal plane component of the Burgers vector with a reasonable accuracy, and we show that a varying level of residual stress over the SiC wafer results in substantial modifications of the birefringence patterns, which are well accounted for by the simulation. We compare birefringence data with etch pits formed after KOH etching, and critically assess the information which can be extracted from the combined use of both techniques.
    Journal of Crystal Growth 09/2012; 354(1):202–207. DOI:10.1016/j.jcrysgro.2012.06.009 · 1.69 Impact Factor
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    ABSTRACT: We show how the weak field magneto-conductance can be used as a tool to characterize epitaxial graphene samples grown from the C or the Si face of Silicon Carbide, with mobilities ranging from 120 to 12000 cm^2/(V.s). Depending on the growth conditions, we observe anti-localization and/or localization which can be understood in term of weak-localization related to quantum interferences. The inferred characteristic diffusion lengths are in agreement with the scanning tunneling microscopy and the theoretical model which describe the "pure" mono-layer and bilayer of graphene [MacCann et al,. Phys. Rev. Lett. 97, 146805 (2006)].
    Journal of Applied Physics 06/2012; 113(8). DOI:10.1063/1.4793591 · 2.19 Impact Factor
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    ABSTRACT: Besides the seeded sublimation process, which is the current industrial crystal growth process for silicon carbide (SiC), solution growth appears as a possible method for high quality bulk crystals. For a further development of the latter technique, a robust numerical model has been implemented with the aim to give quantitative outcomes in addition to qualitative information. Growth rates have been calculated for three different temperature ranges (1700, 1800 and 1900°C) in pure silicon. The computed values were found to be in good agreement with the experimental ones.
    Materials Science Forum 05/2012; 717-720:69-72. DOI:10.4028/www.scientific.net/MSF.717-720.69
  • Le Thi Mai Hoa · Thierry Ouisse · M. Seiss · Didier Chaussende
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    ABSTRACT: Using 6H SiC wafers including regions with a varying residual stress, the birefringence pattern of almost vertical dislocations is measured and modeled. We show that it is possible to identify the basal plane component of "small" dislocations by a quantitative fit of the birefringence pattern. Combining birefringence and etch pit detection after KOH etching shows that most of the vertical dislocations are of a mixed nature, exhibiting both an edge and a screw component.
    Materials Science Forum 05/2012; 717-720:331-334. DOI:10.4028/www.scientific.net/MSF.717-720.331
  • S.cristoloveanu · T.ernst · D.munteanu · T.ouisse
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    ABSTRACT: We tentatively present possible architectures of Silicon On Insulator (SOI) transistors for the final stages of the scaling of silicon microelectronics. The scaling trends for conventional partially depleted and fully depleted SOI MOSFETs are critically examined. A ground plane can considerably attenuate short-channel effects. The manufacturability of extremely thin MOSFETs is demonstrated. Based on quantum calculations, we discuss the merits of double-gate transistors with volume inversion.
    International Journal of High Speed Electronics and Systems 04/2012; 10(01). DOI:10.1142/S012915640000026X
  • T. Ouisse
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    ABSTRACT: We show that some important features characterizing the Mn+1AXn phases, a family of hexagonal-structure ternary carbides and nitrides (X) including a transition metal (M) and an A-group element (A), can be reproduced by modifying the spin model known as the axial next-nearest-neighbor Ising model into a form where pseudospin inversion changes the system energy and requires the inclusion of single- and three-spin products. We describe the various MAX phases in terms of M-A or M-X bilayer stacking along the c axis. We discuss the dependence of the cohesive energy and phase stability on coupling parameters which characterize the first- and second-neighbor interactions between those bilayers. We also address the case of “hybrid” MAX phases.
    Physical review. B, Condensed matter 03/2012; 85(10). DOI:10.1103/PhysRevB.85.104110 · 3.66 Impact Factor
  • Didier Chaussende · Thierry Ouisse
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    ABSTRACT: Symposium 12: Materials for Extreme Environments

Publication Stats

1k Citations
220.30 Total Impact Points

Institutions

  • 2003–2015
    • University of Grenoble
      Grenoble, Rhône-Alpes, France
  • 2007–2011
    • Ecole de Physique, Electronique et Matériaux (INP de Grenoble - PHELMA)
      Grenoble, Rhône-Alpes, France
  • 1995–2011
    • French National Centre for Scientific Research
      • Institut Néel
      Lutetia Parisorum, Île-de-France, France
  • 2001–2007
    • University Joseph Fourier - Grenoble 1
      • Institut Néel
      Grenoble, Rhone-Alpes, France
  • 2000–2001
    • National Center for Scientific Research Demokritos
      • Institute of Microelectronics
      Athens, Attiki, Greece
  • 1996
    • North Carolina State University
      • Department of Electrical and Computer Engineering
      Raleigh, NC, United States
  • 1992
    • Grenoble Institute of Technology
      Grenoble, Rhône-Alpes, France
    • Institute of Geophysics, China Earthquake Administration
      Peping, Beijing, China
  • 1989
    • University of Maryland, College Park
      • Department of Electrical & Computer Engineering
      CGS, Maryland, United States