Publications (2)1.47 Total impact
-
Article: InAs/InGaSb photodetectors grown on GaAs bonded substrates
[show abstract] [hide abstract]
ABSTRACT: The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately 7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength. The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than superlattices grown on GaSb substrates.Journal of Electronic Materials 06/2001; 30(7):798-801. · 1.47 Impact Factor -
Conference Proceeding: High-power InAs/InGaAs type-II QW lasers grown on GaAs alternativesubstrate
[show abstract] [hide abstract]
ABSTRACT: This paper presents the results on wafer fusion (GaAs on InP) with a consequent film transfer (InGaAs) from one substrate (InP) to the other (GaAs). This technique of film transfer has permitted a subsequent epitaxial growth of materials with more than 7% of lattice mismatch. A high performance device quantifies the quality of the material grown. The device consisted of 60 periods of InAs/InGaSb/InAs/AlSb type-II quantum wells forming a mid-infrared (MIR) laser. The InGaAs-GaAs alternative substrate allowed the device to be pumped from its backside with a 980 nm diode laser array. Peak MIR (λ=4.6 μm) power output under 10 μs pulses was over 350 mW per facet. With a 500 μs pulse length and 500 Hz repetition rate, the device produced over 220 mW of quasi-cw output power at 80 KCompound Semiconductors, 2000 IEEE International Symposium on; 02/2000
