K. Brelsford

Publications (4)3.45 Total impact

• Article: Osteoblastoma of the nasal septum.

  E Young, M Dabrowski, K Brelsford
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  ABSTRACT: To present a case of, and to review the literature concerning, osteoblastoma of the nasal cavity, and to demonstrate the importance of considering this rare entity when assessing patients presenting with a nasal septum lesion. Benign osteoblastoma is a rare tumour, constituting 1 per cent of all bone tumours. Most cases occur in the long bones. Osteoblastoma involving the nasal cavity is rare, with only 10 reported cases in the English-language literature. Most nasal cavity cases originate from the ethmoid sinus and spread to involve the nasal cavity. There are only four reported cases of osteoblastoma originating from the bones of the nasal cavity. We report a case of osteoblastoma originating from the bony nasal septum in a 45-year-old man with a history of recurrent, right-sided epistaxis and nasal obstruction. This is the second report in the English-language literature of osteoblastoma originating from the bony nasal septum.
  The Journal of Laryngology & Otology 08/2011; 125(10):1062-6. · 0.60 Impact Factor
• Conference Proceeding: Electromigration current limit of high speed SiGe bipolar transistors influenced by device self-heating

  K. Brelsford, Jae-Sung Rieh, Ping-Chuan Wang, G. Freeman
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  ABSTRACT: In this paper, an overview of the metal electromigration current limit of bipolar transistors is presented in which the device self-heating is taken into account, followed by related design considerations. In this evaluation, we use HBTs processed using IBM's 0.18 mum SiGe BiCMOS technology. This technology was selected to demonstrate the necessity of these studies to high-speed communication circuit designs
  Integrated Reliability Workshop Final Report, 2001. 2001 IEEE International; 02/2001
• Conference Proceeding: Role of N₂ ion implantation dose on hot carrier lifetimein deep submicron NMOS devices

  F.J. Guarin, Rauch, S.E, III, G. La Rosa, K. Brelsford
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  ABSTRACT: The impact of N₂ ion implantation (I/I) dose before gate oxide growth on Hot Carrier (HC) reliability of NMOSFETs is reported here. Improvements ranging from 20 to 30 times in HC lifetime were achieved by the introduction of sufficiently high N₂ (I/I) doses. It was found that for NMOSFET's the HC degradation correlates inversely to the initial interface state density introduced by the N₂ I/I process. We believe that the increased initial interface state density and the reduced hot carrier degradation both stem from the reduced hydrogen concentration at the Si-SiO₂ interface with increasing N₂ dose
  Devices, Circuits and Systems, 2000. Proceedings of the 2000 Third IEEE International Caracas Conference on; 02/2000
• Article: Improvement in hot carrier lifetime as a function of N/sub 2/ ion implantation before gate oxide growth in deep submicron NMOS devices

  F.J. Guarin, S.E. Rauch III, G. La Rosa, K. Brelsford
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  ABSTRACT: A detailed study of the impact of N/sub 2/ ion implantation (I/I) dose before gate oxide growth to hot carrier (HC) reliability of NMOSFETs is reported here, Improvements of more than 20/spl times/ in HC lifetime were achieved by the introduction of sufficiently high N/sub 2/ (I/I) doses. It was found that for NMOSFETs, the HC degradation correlates inversely to the initial interface state density introduced by the N/sub 2/ I/I process. This process-driven HC lifetime improvement does not require extensive post-metal anneals for HC lifetime improvements in advanced CMOS multilevel metal-dielectric processes.
  IEEE Electron Device Letters 01/2000; · 2.85 Impact Factor