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ABSTRACT: A 12-GHz band, two-stage monolithic HEMT (high-electron mobility transistor) low-noise amplifier and a broadband monolithic HEMT distributed amplifier have been developed. The HEMTs used in the amplifiers have a gate length of 0.5 μm and show a typical noise figure of 1.0 dB at 12 GHz. A noise figure of the two-stage amplifier is less than 1.7 dB with a gain over 15.0 dB in the frequency range from 11.7 to 12.7 GHz. A noise figure of the distributed amplifier is less than 6.2 dB and gain of 7 ± 0.9 dB in the frequency range from 2 to 18 GHz.
Electronics and Communications in Japan (Part II Electronics) 03/2007; 74(5):1 - 10. · 0.18 Impact Factor