Huizhao Zhuang

Shandong Normal University, Chi-nan-shih, Shandong Sheng, China

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Publications (73)99.27 Total impact

  • Huizhao Zhuang, Peng Xu, Junlin Li
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    ABSTRACT: Liquid-medicine-filter shaped ZnO nanostructures have been synthesized on Al2O3-coated Si (111) substrates by chemical vapor deposition method (CVD) at 1050°C. Every liquid-medicine-filter shaped ZnO nanostructure is made up of one nanorod and two nanowires at the ends. The liquid-medicine-filter shaped ZnO nanostructures are characterized by scanning electron microscope (SEM), X-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), energy dispersive spectrometer (EDS) photoluminescence (PL). The results indicate that the liquid-medicine-filter shaped ZnO nanostructures are wurtzite hexagonal structure and the growth direction is [0001]. The liquid-medicine-filter shaped ZnO nanostructures became the new member of ZnO nanostructures for the novel configuration. PL reveals ultraviolet (UV) emission at 384nm and a broad emission peak at 540nm. These novel liquid-medicine-filter shaped ZnO nanostructures will provide an improvement for electronic and optical devices. The pre-prepared Al2O3 film on the Si (111) substrate solves the troublesome lattice mismatch problem between the Si substrate and ZnO, and makes the growth of liquid-medicine-filter shaped ZnO nanostructures more effective. In addition, the effect of screw dislocation and polar surfaces in understanding crystal growth mechanisms in nanometer scale were also provided.
    Spectrochimica Acta Part A Molecular and Biomolecular Spectroscopy 03/2013; 110C:395-399. · 1.98 Impact Factor
  • Junlin Li, Huizhao Zhuang
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    ABSTRACT: Large areas of ZnO horseshoe-shaped nanorods have been fabricated vertically on MgO-coated Si (1 1 1) substrates by chemical vapor deposition method. The well-aligned nanorod arrays were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), high resolution transmission electron microscope (HRTEM), energy-dispersive X-ray spectroscopy (EDS), and photoluminescence spectroscopy (PL). The results show that the nanorods are perfect single crystals with hexagonal wurzite structure along the [0 0 0 1] growth direction. The nanorods have regular horseshoe shape, and the diameter of the rods rang 70–99 nm while the length is about 600 nm. The PL spectrum exhibits a strong peak at 500.8 nm and two relatively weak emission bands centered at 387.7 nm and 648.6 nm, which indicates that the ZnO arrays are of excellent optical quality.
    Applied Surface Science 03/2012; 258(10):4365–4369. · 2.54 Impact Factor
  • Huizhao Zhuang, Junlin Li
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    ABSTRACT: ZnO hexagonal prisms have grown on MgO-coated Si (111) substrates by chemical vapor deposition. The process has two steps : the preparation of MgO-coated Si (111) substrates and the preparation of uniform ZnO hexagonal prisms. Some nucleation sites are provided on the Si substrates by the MgO layers, which have the capability to improve the growth of ZnO prisms in the heteroepitaxy. The prisms are single crystals with a preferential growth along the c axis and they are well-faceted at both the end and side surfaces. Room-temperature photoluminescence measurement of these ZnO prisms have shown a strong ultraviolet (UV) emission band centered at 393 nm and a weak green emission band centered at 507 nm, which may be provide an improvement in novel ultraviolet light-emitting devices. In addition, a possible mechanism for the prism growth is proposed based on the analysis by electron microscopy.
    Superlattices and Microstructures 01/2012; 51(1):80–85. · 1.98 Impact Factor
  • Junlin Li, Huizhao Zhuang, Jie Wang, Peng Xu
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    ABSTRACT: Novel ZnO tetrapods have been successfully synthesized on MgO-coated Si (111) substrates by chemical vapor deposition method (CVD) at 1000°C. The tetrapod is made up of four legs and added prisms. The particles are single crystal with the wurtzite hexagonal structure, and the growth direction of the tetrapods changes from [0001] to [011¯1]. This configuration is a new member in the family of ZnO microstructures. The pre-prepared MgO films on the Si (111) substrates can promote the growth of the tetrapods effectively. In addition, the octahedral multiple twin model and polar surfaces are proposed for interpreting the growth of the tetrapods.
    Materials Letters 06/2011; 65(11):1659-1662. · 2.27 Impact Factor
  • Junlin Li, Huizhao Zhuang, Jie Wang, Peng Xu
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    ABSTRACT: Zinc oxide columns have been grown on an MgO-coated silicon (111) substrate by the carbon-thermal evaporation method at 1050 °C. The MgO layer obtained from the substrate pre-dripped in Mg(NO3)2 solution by the use of a dropper can solve the troublesome lattice mismatch problem in the heteroepitaxy and promote the growth of ZnO columns effectively. The as-prepared ZnO structures were characterized by using X-ray diffraction (XRD), field-emission transmission electron microscope (FETEM), selection area electron diffraction (SAED), and photoluminescence (PL) spectrum. The results show that the columns are highly crystalline with the wurtzite hexagonal structure, and grow along the [0001] in the c-axis direction. Photoluminescence (PL) spectra of the as-synthesized microstructures exhibit broad green emission peaks at ∼514 nm. In addition, the growth mechanism of the two ZnO structures is discussed based on the analysis briefly based on the time-dependent experiment.Research highlights► The column shaped ZnO microstructures are every rare in the past articles. ► The prepared MgO layer on the substrate can solve the troublesome lattice mismatch problem and promote the growth of ZnO columns effectively. ► The grown ZnO columns with a stronger green light emission at ∼514 nm have good application in white light emitting diodes. ► The carbon-thermal evaporation method is a simple and cost-effective approach for growing columns on a relatively large scale.
    Superlattices and Microstructures 02/2011; 49(2):117-123. · 1.98 Impact Factor
  • Junlin Li, Huizhao Zhuang, Jie Wang, Peng Xu
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    ABSTRACT: Two types of novel Mg-doped pencil-shaped ZnO microprisms had been successfully synthesized on Mg(NO3)2-coated Si (111) substrates by thermal chemical vapor deposition method. The as-prepared ZnO prisms were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), field-emission transmission electron microscope (FETEM), selected area electron diffraction (SAED), and photoluminescence (PL) spectroscopy. The straight microprisms are made up of hexagonal pyramids tips and hexagonal prisms bodies. Both of the structures are perfect single crystal and have grown along the [0001] direction preferentially. Photoluminescence reveals a red-shift at around 387nm which is induced by Mg doping and a green light emission peak at around 511nm. The pencil-shaped ZnO microstructure can provide an improvement in novel ultraviolet light-emitting devices. In addition, the growth mechanism of the special ZnO microprisms is discussed briefly.
    Applied Surface Science 01/2011; 257(6):2337-2340. · 2.54 Impact Factor
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    ABSTRACT: A novel method was utilized to synthesize one-dimensional β-Ga2O3 nanostructures. In this method, β-Ga2O3 nanostructures have been successfully synthesized on Si(111) substrates through annealing sputtered Ga2O3/Mo films under flowing ammonia in a quartz tube. The as-obtained samples were analyzed in detail using the methods of X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDX) attached to the HRTEM instrument. The results show that the formed nanostructures are single-crystalline Ga2O3. The annealing temperature has an evident influence on the morphology of the β-Ga2O3 nanostructures. The growth mechanism of the β-Ga2O3 nanostructures is also discussed by conventional vapor–solid (VS) mechanism.
    Vacuum. 01/2011; 85(8):802-805.
  • Huizhao Zhuang, Junlin Li, Jie Wang, Peng Xu, Ning An
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    ABSTRACT: Three types of novel ZnO hexagonal microprisms have been grown on MgO-coated Si (111) substrates via carbon-thermal evaporation. In this work, the pre-prepared MgO films on the substrates can solve a troublesome lattice mismatch problem in the heteroepitaxy, which has the capability for promoting the formation of the ZnO nuclei. The structural analyses confirm that the structures are perfect single crystals with hexagonal wurtzite structure along the [0001] growth direction. The diameter of the prisms ranges from 0.6 to 2.5μm and the length is about 3μm. PL spectra of the ZnO products exhibit a UV emission peak at 388nm and a broad green emission peak at 514nm. In addition, the growth mechanism of the crystalline ZnO prisms is discussed briefly, emphasizing the effect of polar orientation on the nucleation.
    Materials Characterization - MATER CHARACT. 01/2011; 62(6):593-598.
  • Huizhao Zhuang, Jie Wang, Junlin Li, Peng Xu, Feng Shi
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    ABSTRACT: Well-crystallized ZnO nanowires have been successfully synthesized on NiCl2-coated Si substrates via a carbon thermal reduction deposition process. The pre-deposited Ni nanoparticles by dipping the substrates into NiCl2 solution can promote the formation of ZnO nuclei. The as-synthesized nanowires were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectrum. The results demonstrate that the as-fabricated nanowires with about 60nm in diameter and several tens of micrometers in length are preferentially arranged along [0001] direction with (0002) as the dominate surface. Room temperature PL spectrum illustrates that the ZnO nanowires exist a UV emission peak and a green emission peak, and the peak centers locate at 387 and 510nm. Finally, the growth mechanism of the nanowires is briefly discussed.
    Journal of Materials Science Materials in Electronics 01/2011; 22(7):765-770. · 1.49 Impact Factor
  • Jie Wang, Huizhao Zhuang, Junlin Li, Peng Xu
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    ABSTRACT: Polar surface dominated ZnO brush-like nanostructures have been successfully synthesized on Si substrates via a carbon-thermal reduction method at a temperature of 900 °C. Specially, the axis of the as-prepared brush-like nanostructures is a straight nanorod along the [0 0 0 1] direction and enclosed by six {} surfaces, which grew first; the sixfold symmetric nanonails were later formed along the equivalent a axes () perpendicular to the central nanorod, and the brush is formed by epitaxial growth of nanonails on the central nanorod. The growth of the structures is based on firstly sprouting of nanorods and then epitaxial growth of nanonails in the six symmetric [] directions. Based on the testing results, the growth mechanism of the ZnO brush-like nanostructures was discussed, emphasizing the self-catalysed of ZnO and the polar orientation of ZnO nanostructures, and the formation of the nanonails may due to the different chances of absorbing the arriving vapors.
    Applied Surface Science 01/2011; 257(6):2097-2101. · 2.54 Impact Factor
  • Junlin Li, Huizhao Zhuang, Jie Wang, Peng Xu
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    ABSTRACT: Novel zinc oxide (ZnO) microprisms doped with Mg have been synthesized on Mg (NO3)2-coated Si (111) substrates successfully by a thermal chemical vapor deposition method. The as-prepared Mg-doped zinc oxide single-crystal microprisms were characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). The results show that the microstructures consist of hexagonal pyramids tips and hexagonal prisms. The whole structure is a perfect single crystal and has preferred growth along the [0001] direction. PL reveals ultraviolet (UV) emission at 388 nm and a strong green light emission peak at 500 nm. Mg-doped microprisms will provide an improvement for novel electronic and optical devices. In addition, the growth mechanism of the special Mg-doped ZnO microstructure is proposed based on a solid–vapor approach.
    Physica Status Solidi (A) Applications and Materials 11/2010; 208(1):136 - 139. · 1.53 Impact Factor
  • Jie Wang, Huizhao Zhuang, Junlin Li, Peng Xu
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    ABSTRACT: ZnO nanorods were synthesized on NiCl2-coated Si substrates via a chemical vapor deposition (CVD) process. The as-fabricated nanorods with diameters ranging from 150 nm to 200 nm and lengths up to several tens of micrometers grew preferentially arranged along [0001] direction, perpendicular to the (0002) plane. The clear lattice fringes in HRTEM image demonstrated the growth of good quality hexagonal single-crystalline ZnO. Room temperature photoluminescence (PL) spectra illustrated that the ZnO nanorods exhibit strong UV emission peak and green emission peak, peak centers located at 388 nm and 506 nm. A possible growth mechanism based on the study of our X-ray diffraction (XRD), electron microscopy and PL spectroscopy was proposed, emphasizing the effect of NiCl2 solution (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
    Crystal Research and Technology 01/2010; 45(9):988-992. · 1.12 Impact Factor
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    ABSTRACT: In this work, GaN nanowires were fabricated on Si substrates coated with NiCl2 thin films using chemical vapor deposition (CVD) method by evaporating Ga2O3 powder at 1100 °C in ammonia gas flow. X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscope (HRTEM) and photoluminescence (PL) spectrum are used to characterize the samples. The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanowires is also discussed.
    Applied Surface Science 06/2009; 255(17):7719–7722. · 2.54 Impact Factor
  • Source
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    ABSTRACT: GaN nanowires doped with Mg have been synthesized at different temperature through ammoniating the magnetron-sputtered Ga2O3/Au layered films deposited on Si substrates. X-ray diffraction (XRD), Scanning electron microscope (SEM), high-resolution TEM (HRTEM) equipped with an energy-dispersive X-ray (EDX) spectrometer and photoluminescence (PL) were used to analyze the structure, morphology, composition and optical properties of the as-synthesized sample. The results show that the ammoniating temperature has a great impact on the properties of GaN. The optimally ammoniating temperature of Ga2O3/Au layer is 900 ∘C for the growth of GaN nanowires(NWs). The band gap emission (358 nm) relative to that (370 nm) of undoped GaN NWs has an apparent blueshift, which can be ascribed to the doping of Mg. Finally, the growth mechanism is also briefly discussed.
    Superlattices and Microstructures 06/2009; 45(6):514-519. · 1.98 Impact Factor
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    ABSTRACT: ZnO nanoporous belts with a smooth surface and high pore density have been successfully synthesized; the simple growth method is applicable to produce high-yield single-crystalline ZnO nanoporous belts with a relatively high purity and at a low cost. The morphology and microstructure and optical properties of ZnO nanoporous belts were analyzed by X-ray diffraction (XRD), Fourier transform infrared system (FTIR), scanning electron microscope (SEM), field-emission transmission electron microscope (FETEM), selective area electron diffraction (SAED), and photoluminescence (PL) spectroscopy. Results reveal that ZnO nanoporous belts possess good crystalline quality. The formation mechanism of the special ZnO microstructure is discussed, emphasizing the effect of polar orientation on the nucleation and growth of ZnO nanoporous belts.
    Crystal Growth & Design - CRYST GROWTH DES. 05/2009; 9(5).
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    ABSTRACT: Novel W-shaped porous ZnO nanobelt with the periodical junction angles of about 118° and straight porous ZnO nanobelt have been successfully synthesized. The W-shaped structure growth changes from [0001] to [0 1 1¯ 1] periodically. The straight nanobelt grows along [0001] direction. Both of the structures have smooth surfaces with high porous density. Based on our X-ray diffraction (XRD), electron microscopy and photoluminescence (PL) spectrum study, the growth mechanism of the special ZnO nanostructures is discussed, emphasizing the effect of alteration of the reactant concentration for two different morphologies.
    Applied Surface Science 02/2009; 255(9):4970-4973. · 2.54 Impact Factor
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    ABSTRACT: Magnesium-doped GaN nanowires with different dopant concentrations are synthesized by ammoniating Ga(2)O(3) thin films doped with Mg at 900 degrees C. Scanning electron microscopy (SEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), high-resolution transmission electron microscopy (HRTEM), and room-temperature photoluminescence (PL) are employed to characterize the influences on the morphology, structure, crystallinity, and optical properties of Mg-doped GaN nanowires. The results demonstrate that the nanowires are single-crystalline with hexagonal wurzite structure. GaN nanowires doped with 5 atom % of Mg have the best morphology and crystallinity with a single-crystalline structure, and at this composition the PL spectrum with the strongest UV peak is observed. The growth mechanism of crystalline GaN nanowires is discussed briefly.
    ChemPhysChem 02/2009; 10(3):571-5. · 3.35 Impact Factor
  • Shoubin Xue, Xing Zhang, Ru Huang, Huizhao Zhuang
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    ABSTRACT: ZnO thin films were first prepared on Si(111) substrates using a radio frequency magnetron sputtering system. Then the as-grown ZnO films were annealed in oxygen ambient at temperatures of 700, 800, 900, and 1000°C , respectively. The morphologies of ZnO films were studied by an atom force microscope (AFM). Subsequently, GaN epilayers about 500nm thick were deposited on the ZnO buffer layers. The GaN/ZnO films were annealed in NH3 ambient at 900°C. The microstructure, morphology and optical properties of GaN films were studied by x-ray diffraction (XRD), AFM, scanning electron microscopy (SEM) and photoluminescence (PL). The results are shown, their properties having been investigated particularly as a function of the ZnO layers. For better growth of the GaN films, the optimal annealing temperature of the ZnO buffer layers was 900°C.
    Applied Physics A 02/2009; 94(2):287-291. · 1.69 Impact Factor
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    ABSTRACT: Large-scale GaN nanowires were synthesized on Si(111) substrates through ammoniating Ga2O3/V films. The as-grown products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The results reveal that the grown GaN nanowires have a smooth and clean surface with diameters ranging from 20 nm to 60 nm and lengths of about several tens of micrometers. The results of HRTEM and selected-area electron diffraction (SAED) show that the nanowires are pure hexagonal GaN single crystal. The photoluminescence (PL) spectrum indicates that the GaN nanowires have good emission property. The growth mechanism is discussed briefly.
    Rare Metal Materials and Engineering - RARE METAL MAT ENG. 01/2009; 38(3):377-379.
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    ABSTRACT: GaN nanowires doped with Mg have been synthesized on Si (111) substrate through ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere. The Mg-doped GaN nanowires were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), high-resolution transmission electron microscopy (HRTEM) and photoluminescence (PL). The results demonstrate that the nanowires were single crystalline with hexagonal wurzite structure. The diameters of the nanowires ranged 20–30 nm and the lengths were about hundreds of micrometers. The intense PL peak at 359 nm showed a blueshift from the bulk band gap emission, attributed to Burstein–Moss effect. The growth mechanism of the crystalline GaN nanowires is discussed briefly.
    Materials Letters - MATER LETT. 01/2009; 63(12):978-981.

Publication Stats

96 Citations
99.27 Total Impact Points

Institutions

  • 2003–2013
    • Shandong Normal University
      Chi-nan-shih, Shandong Sheng, China
  • 2009
    • University of Jinan (Jinan, China)
      Chi-nan-shih, Shandong Sheng, China
  • 2008
    • Peking University
      • Institute of Microelectron
      Beijing, Beijing Shi, China