Z.T Song

Publications (2)4.21 Total impact

• Article: Interfacial and microstructural properties of zirconium oxide thin films prepared directly on silicon

  N.L Zhang, Z.T Song, Q Wan, Q.W Shen, C.L Lin
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  ABSTRACT: Zirconium oxide thin films were deposited directly on Si by ultra high vacuum electron beam evaporation (UHV-EBE) and rapid thermal annealed (RTA) in O2 ambient at different temperatures ranging from 300 to 800 °C. X-ray photoelectron spectroscopy (XPS) revealed zirconium is in the fully oxidized state of Zr4+. X-ray diffraction (XRD) results showed that as-deposited thin films were amorphous. When the annealing temperature increased higher than 700 °C, the films began to crystallize. The surface topology was studied with atomic force microscopy (AFM) and the surface of the 700 °C-annealed sample was more rougher than that of the 600 °C-annealed sample, due to its potentially faceted interfaces. And the typical RMS roughness ranged from 0.546 to 0.666 nm across an area of μm. Sharp interfaces between ZrO2 and Si were obtained both by spreading resistance profile (SRP) and cross-sectional transmission electron microscope (XTEM). The interfacial oxide (∼1 nm) was not detected until annealing temperature amounting to 700 °C and the exact compositions were not known yet.
  Applied Surface Science 202:126-130. · 2.10 Impact Factor
• Article: Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric

  Q Wang, Z.T Song, W.L Liu, C.L Lin, T.H Wang
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  ABSTRACT: Monolayer-isolated silver (Ag) nanodots with the average diameter down to 7 nm are synthesized on Al2O3/Si substrate by vacuum electron-beam evaporation followed by annealing at 400 °C in N2 ambient. Metal–insulator-silicon (MIS) structures with Ag nanodots embedded in Al2O3 gate dielectric are fabricated. Clear electron storage effect with the flatband voltage shift of 1.3 eV is observed through capacitance–conductance and conductance–voltage measurements. Our results demonstrate the feasibility of applying Ag nanodots for nanocrystal floating-gate memory devices.
  Applied Surface Science 230:8-11. · 2.10 Impact Factor