L Wang

Publications (2)5.54 Total impact

• Article: Fabrication of high-resolution large-area patterns using EUV interference lithography in a scan-exposure mode.

  L Wang, H H Solak, Y Ekinci
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  ABSTRACT: Limited beam spot size is a major limitation of interference lithography. This limits the area of patterning and reduces the pattern homogeneity. We describe a scanning exposure technique to circumvent this problem. We show the generation of uniform and seamless gratings with half-pitches down to 35 nm over an area of several mm(2) using EUV interference lithography. The presented technique offers a fast and cost-effective method of fabricating one- and two-dimensional periodic nanostructures with improved uniformity and increased patterning area.
  Nanotechnology 08/2012; 23(30):305303. · 3.98 Impact Factor
• Article: Four-wave EUV interference lithography

  H.H. Solak, C. David, J. Gobrecht, L. Wang, F. Cerrina
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  ABSTRACT: We have developed a multiple beam Extreme Ultraviolet (EUV) interference lithography system to create two-dimensional periodic structures. A spatially coherent EUV beam from an undulator source is diffracted by several transmission gratings, which were written by electron beam lithography. Interference pattern due to the diffracted beams is recorded on a photoresist coated substrate. Square array of holes with a 141-nm periodicity were written in initial tests. In this paper, we discuss the potential of this technique for extremely high-resolution patterning and issues related to illumination coherence and polarization.
  Microelectronic Engineering · 1.56 Impact Factor