ABSTRACT: We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with stan-dard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10 −10 at −1 dBm incident optical power.
IEICE Electronics Express Intel Technol. J. IEEE J. Solid-State Circuits IEEE J. Sel. Topics Quantum Electron. IEEE Photon. Technol. Lett. 04/2004; 7(15):659-665.