Publications (2)0 Total impact
Article: A bandwidth adjustable integrated optical receiver with an on-chip silicon avalanche photodetector[show abstract] [hide abstract]
ABSTRACT: A bandwidth adjustable integrated optical receiver hav-ing an on-chip silicon avalanche photodetector is realized with stan-dard 0.25-µm silicon-germanium bipolar complementary metal-oxide-semiconductor technology for optical interconnect applications. With the controllable capacitive degeneration technique, the optical receiver bandwidth can be adjusted for the best bit error rate performance.IEICE Electronics Express Nature Appl. Phys. Lett. Opt. Express IEICE Electron. Express IEEE Trans. Circuits Syst. II. 04/2010; 838(46):404-409.
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ABSTRACT: We demonstrate an 850-nm high-speed photoreceiver with a monolithically integrated silicon avalanche photodetector for optical interconnect applications. The photoreceiver is fabricated with stan-dard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor technology without any process modification. The photoreceiver achieves 7-Gb/s optical data transmission with the bit-error rate less than 10 −10 at −1 dBm incident optical power.IEICE Electronics Express Intel Technol. J. IEEE J. Solid-State Circuits IEEE J. Sel. Topics Quantum Electron. IEEE Photon. Technol. Lett. 04/2004; 7(15):659-665.