Duanlin Que

Zhejiang University, Hang-hsien, Zhejiang Sheng, China

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Publications (136)230.76 Total impact

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    ABSTRACT: The structural and optical properties of erbium-doped silicon-rich silica samples containing different Si concentrations are studied. Intense photoluminescence (PL) from luminescence centers (LCs) and silicon nanoclusters (Si NCs), which evolves with annealing temperatures, is obtained. By modulating the silicon concentrations in samples, the main sensitizers of Er(3+) ions can be tuned from Si NCs to LCs. Optimum Er(3+) PL, with an enhancement of more than two, is obtained in the samples with a medium Si concentration, where the sensitization from Si NCs and LCs coexists.
    Nanoscale Research Letters 01/2014; 9(1):456. · 2.52 Impact Factor
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    ABSTRACT: The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er3+ takes advantage in the SROEr film and enhances the light emission from Er3+. The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er3+.
    Nanoscale Research Letters 08/2013; 8(1):366. · 2.52 Impact Factor
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    ABSTRACT: The dissociation of iron-boron pairs (FeB) in Czochralski silicon under strong illumination was investigated. It is found that the dissociation process shows a double exponential dependence on time. The first fast process is suggested to be caused by a positive Fe in FeB capturing two electrons and diffusion triggered by the electron-phonon interactions, while the second slow one would involve the capturing of one electron followed by temperature dependent dissociation with an activation energy of (0.21 ± 0.03) eV. The results are important for understanding and controlling the behavior of FeB in concentrator solar cells.
    AIP Advances. 08/2013; 3(8).
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    ABSTRACT: The size-dependent coupling between localized surface plasmons (LSPs) and excitons within a silicon nitride (SiN<sub>x</sub>) matrix is investigated. A strong correlation between the photoluminescence (PL) enhancement and this resonance coupling is observed. From the analysis of the relationship between the dipolar resonance peaks of Ag nanostructures with various sizes and those of PL enhancement, we ascribe the enhancement of PL from the SiN<sub>x</sub> matrix by the addition of Ag nanostructures mainly to the LSP resonance coupling.
    Optics Letters 08/2013; 38(15):2832-4. · 3.39 Impact Factor
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    ABSTRACT: The external quantum efficiency as well as its degeneration in silicon nitride light-emitting devices is significantly improved by the addition of metal nanostructures. The origin of this efficiency droop phenomenon is investigated in detail via the analysis of the dominant process contributing to the light output power and the carrier injection conditions for the devices with and without metal nanostructures. We attribute this droop mainly to the nonradiative Auger recombination as the introduction of metal nanostructures would suppress the Auger process but make the carrier overflow more serious due to the enhanced local electrical field by localized surface plasmon resonance.
    Applied Physics Letters 02/2013; 102(8). · 3.79 Impact Factor
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    ABSTRACT: A maximal enhancement of ~6.5 times of the external quantum efficiency (EQE) for SiNx-based light-emitting devices (LEDs) is achieved by magnetron sputtering a silver nanostructures layer onto the active matrix. The enhancement of EQE is affected by the dimension and morphology of silver nanostructures, which can be controlled by the sputtering time and the post treatment of rapid thermal annealing. The optimal size of silver nanostructures is about 100 nm in diameter by comparing the integrated electroluminescence intensity under the same input power. The optimization of EQE for SiNx-based LEDs is discussed by considering the contributions of the enhancement of light-extraction efficiency induced by the surface roughening of the front electrode, internal quantum efficiency due to the coupling between excitons and localized surface plasmons, and carrier injection efficiency. Our work may provide an alternative approach for the fabrication of Si-based light sources with promising luminescence efficiency.
    Optics Express 01/2013; 21(2):1675-86. · 3.55 Impact Factor
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    ABSTRACT: A series of silicon-rich oxide (SRO) and erbium-doped SRO (SROEr) films imbedded with structural tunable silicon nanoclusters (Si NCs) have been fabricated using sputtering followed by post-annealing. The coalescence of Si NCs is found in the films with large Si excess. The energy transfer rate between Si NCs and Er3+ is enhanced, but the luminescence efficiencies of both Si NCs and Er3+ are reduced by the coalescent microstructures. Optimization of the microstructures of Si NCs is performed, and the preferential optical performance for both Si NCs and Er3+ could be achieved when Si NCs were separated in microstructures.
    Nanoscale Research Letters 01/2013; 8(1):34. · 2.52 Impact Factor
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    ABSTRACT: A multilayer structure of ITO/SiNx/Ag/p/p<sup>+</sup>-Si/Au was fabricated to improve the extraction of the orange-yellow electroluminescence from SiNx-based light-emitting devices (LEDs), and an about 5 times enhancement of external quantum efficiency (EQE) was obtained. This improved light-extraction is mainly originated from the increase of root-mean-square roughness of ITO electrode and reflectivity at longer wavelength via the addition of elongated Ag nanostructures. For the structure with the dipolar resonance peak of Ag nanostructures far from the emission wavelength of SiNx matrix, the increased surface roughness of ITO electrode has a dominant effect on the improvement of the light-extraction. Moreover, the decrease of on-series resistance by the addition of Ag nanostructures due to its enhanced local electrical fields also has a benignant contribution to the improved EQE. Our work may provide a promising approach to improve the EQE of LEDs, which is not limited to SiNx matrix.
    Optics Express 01/2013; 21(1):846-54. · 3.55 Impact Factor
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    ABSTRACT: Germanium (Ge)-doped crystalline silicon has attracted much attention in recent years, due to its promising properties for meeting the increasing requirements for photovoltaic applications. This paper has reviewed our recent results on Ge-doped crystalline silicon and corresponding solar cells. It includes that Ge doping improves the fracture strength of crystalline silicon, and suppresses the Boron–Oxygen (B–O) defects responsible for the light induced degradation (LID) of carrier lifetime. Ge doping in crystalline silicon will not only benefit for reduction of breakage during the cell fabrication processes, but also improve the solar cell efficiency and the power output of corresponding modules under sunlight illumination.
    Journal of Crystal Growth 01/2013; 362:140–144. · 1.55 Impact Factor
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    ABSTRACT: The electroluminescence (EL) wavelength tailoring of silicon-rich silicon nitride (SiNx)-based light-emitting devices (LEDs) is achieved by the modulation of the dimensions of Ag nanoparticles. Two EL peaks are observed in our SiNx-based LEDs, both of which are red shifted with the increasing sizes of Ag nanoparticles. A reasonable explanation on this shift is proposed from the calculation of the local electric field surrounding Ag nanoparticles based on a simple model. This red shift of the two EL peaks as well as the evolution of their relative intensities is mainly originated from its weakening electric field enhancement with the increase of the size of Ag nanoparticles. Our work provides an alternative approach toward the fabrication of SiNx-based LEDs with tunable EL wavelengths.
    IEEE Journal of Selected Topics in Quantum Electronics 01/2013; 19(3):4602504-4602504. · 4.08 Impact Factor
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    ABSTRACT: The coupling between localized surface plasmons (LSPs) within silver nanostructures and excitons in a silicon-rich silicon nitride (SiNx) matrix has been demonstrated via the Purcell effect. A simple model is employed for the estimation of the Purcell factor as well as the average position of excitons within a luminescence matrix. The estimated average position of the excitons is located at approximately 40 nm beneath the top surface of the SiNx films. The approaches for further improving the optoelectrical properties of the luminescence matrix are anticipated based on the model we adopted. The optimization of the thickness of the luminescence matrix as well as the size and shape of metal nanostructures may be the alternative approaches. Besides, the application of multilayers with the luminescence matrix inserted between barrier layers (we defined it as confined structures here) may be also an available choice. Our work may provide a deep comprehension on the coupling between LSPs and excitons, which is not limited to a certain luminescence material but with unconfined structures.
    Nanoscale Research Letters 12/2012; 7(1):669. · 2.52 Impact Factor
  • Lu Jin, Dongsheng Li, Deren Yang, Duanlin Que
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    ABSTRACT: The modulation effect of microstructures on photoluminescence (PL) properties of silicon nanoclusters (Si NCs) in silicon-rich oxide (SRO) matrix prepared by electron-beam evaporation (EBE) and magnetron sputtering (MS) is investigated. A loose and porous microstructure is obtained from the SRO film prepared by EBE, while compact microstructure is acquired from that prepared by MS. The Si NCs with high density and good quality are formed in the SRO film prepared by EBE, and preferable PL performance of Si NCs is achieved in the EBE film with loose and porous microstructure. In contrast, the density and quality of Si NCs in the compact SRO film are suppressed and the PL properties are deteriorated due to the volumetric mismatching during the precipitation procedure of Si NCs. Optimization of the microstructures in SRO films should be made to reduce the volumetric mismatching and improve the PL properties of Si NCs.
    Applied Physics A 12/2012; · 1.69 Impact Factor
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    ABSTRACT: Two obvious Gauss peaks are observed in SiNx-based light-emitting devices with silver nanoparticles deposited onto the luminous layer, both of which are blue shifted with the increase of injected current. The origin of these two peaks is discussed by means of the changes of their positions, relative intensities, and full width at half maximum. We attribute the blue-shift of both electroluminescence peaks to the improvement of carrier injection as carriers can be injected into higher energy levels along their corresponding band tails, which is also confirmed by the changes of the transport mechanism.
    Optics Express 07/2012; 20(16):17359-66. · 3.55 Impact Factor
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    ABSTRACT: Based on an ITO/Ag/SiNx/p+-Si/Al structure, a significant enhancement of the external quantum efficiency was achieved compared with the device without Ag island film. Analysis showed that the increase of the light-extraction efficiency resulted from the surface roughening of ITO electrode has a main contribution to this enhancement. The increase of the internal quantum efficiency induced by the enhancement of spontaneous emission rate and the carrier injection level also has an instructive contribution. Our results demonstrate that localized surface plasmons enhanced SiNx-based light emitting devices show great promise for the development of efficiency Si-based optical device.
    Applied Physics Letters 01/2012; 100(3). · 3.79 Impact Factor
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    ABSTRACT: The injection of carriers for SiNx-based light-emitting devices (LEDs) is improved by the addition of silver nanoparticels (Ag NPs) onto the luminescence matrix. The threshold voltage of the device and the turn-on voltage for thermal emission of carriers are decreased. No visible electroluminescence (EL) from SiNx-based LEDs can be detected under the Poole-Frenkel transport of carriers. This EL can be resolved when the transport of carriers along their corresponding band tails is dominated under a higher voltage. The turn-on voltage of EL is decreased significantly by the addition of Ag NPs due to this improved carrier injections.
    Group IV Photonics (GFP), 2012 IEEE 9th International Conference on; 01/2012
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    ABSTRACT: In this paper, we have investigated the effect of phosphorus diffusion gettering on the precipitated Cu in silicon via rapid thermal process (RTP). It is found that, for dot-like or star-like precipitates, the RTP-based phosphorus diffusion technique is efficient for gettering out the precipitated Cu. A two-step RTP gettering process is much more effective than a single-step RTP process. Furthermore, the choice of oxygen ambient can enhance the Cu gettering efficiency due to the involvement of considerable self-interstitial silicon atoms. The minority carrier lifetime of the sample subjected to RTP-based phosphorus gettering has also been verified to be significantly enhanced. These results are of interest for the gettering engineering of high-efficiency silicon solar cells.
    Journal of Crystal Growth 01/2010; · 1.55 Impact Factor
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    ABSTRACT: Through comparison between the oxygen precipitation (OP) behaviors in heavily and lightly phosphorus (P)-doped Czochralski silicon (CZ-Si) crystals subjected to low-high two-step anneal of 600, 650, or 750 ° C /8 h +1050 ° C /16 h , we have found that in heavily P-doped CZ-Si, OP is much stronger in the case with the nucleation anneal at 600 or 650 ° C while it is to some extent suppressed in the case with the nucleation anneal at 750 ° C in contrast to lightly doped CZ-Si where nucleation is enhanced at 750 ° C . Transmission electron microscopy investigation reveals that silicon phosphide precipitates of face-centered-cubic SiP form during the nucleation anneal at temperatures 650 ° C and below. The SiP precipitates act as the heterogeneous nuclei for OP during the subsequent high temperature anneal while the oxygen precipitate nuclei containing certain amounts of P atoms generate during the nucleation anneal at 750 ° C . They are further coarsened to be larger oxygen precipitates during the subsequent high temperature anneal. Of significance is that the oxygen precipitate nucleation mechanism operating at certain temperatures for heavily P-doped CZ-Si is found to be completely different from that of lightly P-doped CZ-Si. We believe that the present work provides a further insight into OP in CZ-Si.
    Journal of Applied Physics 06/2009; · 2.21 Impact Factor
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    ABSTRACT: Oxygen precipitation in heavily phosphorous (P)-doped Czochralski silicon (CZ-Si) subjected to the ramping or two-step anneals was investigated. It was revealed that the grown-in oxygen precipitates exerted significant effect on oxygen precipitation behaviors and then resulted in distinctive oxygen precipitation for the wafers form various positions of the ingot. Moreover, it was found that both the seed and tang-end wafers processed significantly intense nucleation at 650 oC without the influence of grown-in oxygen precipitates. It was considered that the heavily P-doping introduced phosphorus related precipitation at 650 oC. When the annealing temperature increased, the capability for nucleation of oxygen precipitation by heavily P-doping would be gradually weakened but the one by oxygen clustering became pronounced. In this case, it was understandable that the tang-end wafer processed higher density of oxygen precipitates than the seed-end wafer at around 750 oC, while a lower one at 1000 oC.
    ECS Transactions 03/2009; 18(1).
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    ABSTRACT: The internal gettering (IG) effects involved with a rapid thermal anneal (RTA) in germanium-doped Czochralski silicon (GCz-Si) wafer have been investigated. It was found that germanium doping could enhance the oxygen precipitation in bulk while shrinking the denuded zone width near the surface through pre-RTA at high temperature plus low–high temperature conventional furnace anneals. Rapid cooling rate after RTA was clarified to be beneficial for oxygen precipitation for GCz-Si wafer. It was suggested that the germanium doping could increase the vacancy concentration in Cz-Si during RTA by forming the germanium–vacancy complexes. In contrast to that in Cz-Si wafer, the smaller-sized higher-density oxygen precipitates were presented in the nucleation anneals, then followed RTA pretreatment while more oxygen precipitates survived during ramping processes after nucleation anneals in the GCz-Si wafer. Enhanced heterogeneous nucleation and reduced critical radius of precipitates associated with the germanium–vacancy complexes have been proposed for the oxygen precipitation enhancement.
    Applied Physics A 03/2009; 94(4):905-910. · 1.69 Impact Factor
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    ABSTRACT: The iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700 °C was investigated. It was found that the iron precipitation rate was increased in turn from 300 to 700 °C. It was also found that the iron could form small precipitates even at low concentration. Moreover, iron precipitation was revealed as the diffusion-limited process, which could be described properly by Ham's law. This performance of iron precipitation in as-received CZ silicon was considered to be significantly influenced by the grown-in oxygen precipitates because of the fact that the grown-in oxygen precipitates could act as the heterogeneous nuclei for interstitial iron.
    Materials Science in Semiconductor Processing. 01/2009;

Publication Stats

680 Citations
230.76 Total Impact Points

Institutions

  • 1995–2014
    • Zhejiang University
      • • State Key Lab of Silicon Materials
      • • Department of Material Science and Engineering
      Hang-hsien, Zhejiang Sheng, China
  • 2006
    • The University of Tokyo
      Edo, Tōkyō, Japan