Publications (3)6.76 Total impact
-
Article: Fabrication and Tunable Dielectric Properties of Magnesium‐Doped Lead Barium Zirconate Thin Films
[show abstract] [hide abstract]
ABSTRACT: In present work, (Pb0.50Ba0.50)ZrO3 (PBZ) thin films doped by Mg from 0 to 5 mol% were deposited on Pt(111)/TiO2/SiO2/Si substrates by the sol–gel method. The phase structure of the Mg-doped PBZ thin films were characterized by X-ray diffraction. The electric-field and temperature-dependent electrical properties of the Mg-doped PBZ thin films were also investigated in detail. It was found that the Mg content had a strong influence on the dielectric properties of the thin films. The maximum values of dielectric permittivity and dielectric loss were obtained with 1 mol% Mg-doping PBZ thin films. However, the figure of merit (FOM) of the films was improved with increase in the Mg content.Journal of the American Ceramic Society 02/2010; 93(3):646 - 649. · 2.27 Impact Factor -
Article: Fabrication and Characterization of Sol–Gel Derived (100)‐Textured (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Thin Films
[show abstract] [hide abstract]
ABSTRACT: A typical kind of antiferroelectric (AFE) thin films with the composition of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) were successfully fabricated on the platinum-buffered silicon substrates through the modified sol–gel method. X-ray diffractometer results indicated that PLZT films possessed a pure perovskite structure with a strong (100) orientation. The dielectric permittivity-field and polarization–field measurements demonstrated the AFE nature of the PLZT thin films. The level of electric-field-induced strain was measured to be about 0.65% using an scanning probe microscope.Journal of the American Ceramic Society 09/2009; 92(12):3081 - 3083. · 2.27 Impact Factor -
Article: Improved field‐induced strains and fatigue endurance of PLZT antiferroelectric thick films by orientation control
physica status solidi (RRL) - Rapid Research Letters 07/2009; 3(7‐8):248 - 250. · 2.22 Impact Factor
Top co-authors
Top Journals
Institutions
-
2009–2010
-
Inner Mongolia University of Science and Technology
Baotou, Inner Mongolia, China
-
