-
[show abstract]
[hide abstract]
ABSTRACT: We present nano mold lithography (NML) which is adequate for high throughput sub-100-nm wafer-level lithography. The details of the house-made press machine and the recipes of the NML are explained. A silicon mold with a minimum feature size of 40 nm has been successfully imprinted on PMMA layers. Reproducible pattern transfer has been routinely achieved with a feature size of 100 nm and a maximum area of 600 µm × 200 µm. Imprinting of metal molds on PMMA layers has also been demonstrated, which opens up the possibility of using metal lift-off patterns as mold patterns.
Journal- Korean Physical Society 08/2001; 39:157-159. · 0.45 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: A selective positioning technique for InAs quantum dots (QDs) on an atomic force microscope (AFM)-patterned GaAs substrate has been proposed and implemented. AFM direct patterning was used to generate various patterns having line widths of several tens of nanometers; then, InAs QDs were grown by using the metalorganic chemical vapor deposition technique. A nonuniform distribution of QDs was observed near the patterns, and the detailed shape of the QD distribution and the sizes of the QDs depended on the spacing and the width of the patterns. The growth condition for the case where the QDs could be aligned along the patterns was found in our work.
Journal- Korean Physical Society 04/2001; 38:251-254. · 0.45 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: The application of atomic-force-microscope (AFM) direct patterning to the selective positioning of InAs quantum dots (QDs) on a (100) GaAs substrate has been proposed and experimentally implemented. The AFM direct patterning was used to generate various patterns of several tens of nanometers in size, and InAs QDs were subsequently grown by a metalorganic chemical vapor deposition technique. A nonuniform distribution of the QDs was observed near the patterns. The detailed shape of the QD distribution and the size of the QDs depended on the geometrical properties such as the sidewall angle, the spacing, and the width of the patterns. We have been able to ascertain, through our work, what growth conditions are necessary for QDs’ alignment along the patterns. © 2000 American Institute of Physics.
Applied Physics Letters 10/2000; 77(16):2607-2609. · 3.84 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: Fabrication of semiconductor quantum dots is of considerable
importance for the study of low dimensional physics and for device
applications. The growth of self-assembled quantum dots (SAQDs) in the
Stranski-Krastanow mode has been attracting considerable interest,
because direct one-step formation of ultra-small quantum dots is
possible. Recently, many interesting works demonstrate selective growth
of such SAQDs utilizing pre-patterned substrates. We have proposed and
demonstrated simple nano-carving of GaAs substrates using the cantilever
oscillations of an atomic force microscope (AFM). In the conference, we
would like to present selective growth of InAs SAQDs on GaAs substrates,
which are patterned by our AFM nano-carving technique. We will show that
the position control of SAQDs is successfully obtained by adjusting the
shape and the size of the AFM patterns
Microprocesses and Nanotechnology Conference, 2000 International; 08/2000
-
[show abstract]
[hide abstract]
ABSTRACT: A resistless nano-structure patterning technique by using tip-oscillation of an atomic force mi-croscope (AFM) has been investigated systematically. The AFM cantilever exerting approximately 1 µN forces on the GaAs surface and oscillating at the natural frequency of the feedback circuit induces the bond breaking of the GaAs atoms from the surface. We applied this technique to the manipulation of InGaAs quantum dots formed on GaAs substrate. InGaAs quantum dots have successfully been removed from the original location. The process is simple to perform, and well suited for nano-device fabrication.
Journal- Korean Physical Society 01/2000; 35:987-990. · 0.45 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: A resistless nanostructure patterning technique using tip oscillation of an atomic force microscope (AFM) was systematically investigated. Commercial AFM cantilevers are used to successfully generate patterns as narrow as 10 nm on a GaAs surface, without further sharpening of the tips. Reliable patterns with fully controlled width and depth are achieved by adjusting the feedback gain and the scan speed. This process allows nanometer-scale patterning to be performed simply, and is well suited for nanodevice fabrication. © 1999 American Institute of Physics.
Applied Physics Letters 07/1999; 75(2):292-294. · 3.84 Impact Factor
-
[show abstract]
[hide abstract]
ABSTRACT: The authors report the direct fabrication and manipulation of nano-structures by using the cantilever oscillation of an atomic force microscope (AFM). The oscillating cantilever exerts a large enough force to break the surface bond and subsequently remove the atoms. Various reliable groove patterns on GaAs, with fully controlled width and depth, are achieved by adjusting the feedback gain of the AFM and the applied force. Furthermore, the selection and the subsequent removal of individual InAs self-assembled quantum dots is also shown to be possible
Microprocesses and Nanotechnology Conference, 1999. Digest of Papers. Microprocesses and Nanotechnology '99. 1999 International; 02/1999
