ABSTRACT: The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field
sensors based on n
+-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irradiation). The optimum
concentration of free electrons n for providing the highest possible radiation resistance of the InSb sensors is estimated (n ≈ (6–7) × 1017 cm−3). The contributions of two competing processes to variation in the electrical properties of InSb under neutron irradiation
(transmutation-related doping of InSb with a Sn shallow-level donor impurity and compensation of the initial n
+-InSb conductivity as a result of generation of deep-level acceptor-type radiation defects) are determined separately.
Semiconductors 06/2005; 39(7):780-785. · 0.63 Impact Factor