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ABSTRACT: The ZnO/Si heterojunctions have been prepared by depositing n-ZnO films doped with aluminium on p-Si by spray pyrolysis method.
Heterojunction solar cells were fabricated using the configuration Al/ZnO/Si/In. The electrical properties of the heterojunction
are investigated by means of current–voltage measurements in the temperature range 295–375K. The cells show the rectifying
behaviour characterized by the current–voltage (I–V) measurement under a dark condition, while photoelectric effects have
been exhibited under the illumination. As a result, the conversion efficiency of the fabricated cell of about 6.6% was obtained.
Journal of Materials Science Materials in Electronics 04/2012; 17(10):835-839. · 1.49 Impact Factor