F. Ellinger

Technische Universität Dresden, Dresden, Saxony, Germany

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Publications (179)126.79 Total impact

  • Weiran Cai, Frank Ellinger, Ronald Tetzlaff
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    ABSTRACT: We propose a new memristive model for the neuronal synapse based on the spike-timing-dependent plasticity (STDP) protocol, considering both long-term and short-term plasticity in the synapse. Higher-order behavior is modeled by a memristor with adaptive thresholds, which realizes the well-established suppression principle of Froemke. We assume a mechanism of variable thresholds adapting to synaptic potentiation (LTP) and depression (LTD), which reproduces the refractory time in the weight modification. The corresponding dynamical process is governed by a set of ordinary differential equations. Interestingly, the Froemke's model and our memristive model, based on two completely different mechanisms, are found to be quantitatively equivalent for the 'pre-post-pre' case and 'post-pre-post' case. A relation of the adaptive thresholds to short-term plasticity is addressed.
    IEEE Transactions on Biomedical Circuits and Systems 06/2014; · 2.74 Impact Factor
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    ABSTRACT: Fully printed organic field effect transistors (OFETs) are fabricated on a flexible, 100- $mu{rm m}$ -thick, polyethylene terephthalate substrate using high-throughput printing techniques: 1) Cyflex; 2) gravure; 3) screen; and 4) flexographic printing without using a cleanroom, and below 130 $^{circ}{rm C}$ . The dependence of the transconductance $({g}_{m})$ , transit-frequency $({f}_{T})$ , and intrinsic-gain on the bias drain current $({I}_{rm D})$ are measured. The OFETs show intrinsic gain for ${I}_{rm D}>10~{rm nA}/{rm mm}$ (per millimeter width), and reach ${f}_{T}=64~{rm kHz}$ at ${I}_{rm D}=16~mu{rm A}/{rm mm}$ , whereas the ${g}_{m}$ loss with frequency is ${<}{10%}$ up to ${f}_{T}$ . Unlike silicon MOSFETs, the dependence of the OFET ${g}_{m}$ on the ${f}_{T}$ in the subthreshold region is found to be weaker than ${I}_{rm D}^{1.0^{vphantom{)}}}$ . In addition, the overlap capacitance of the staggered-geometry OFET shows strong frequency dependence, and this is - hown to be related to the overlap semiconductor. For the first time, it is found that the impact of process variations and bias stress on the OFET analog characteristics can be significantly attenuated by biasing the device at a fixed ${I}_{rm D}$ . This approach is tested on an array of five amplifiers, reaching the gain-bandwidth product of 32 kHz, within ${pm}{3.7%}$ variations.
    IEEE Transactions on Electron Devices 01/2014; 61(5):1423-1430. · 2.06 Impact Factor
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    ABSTRACT: This paper presents the design and characterization of a 220–240 GHz four-element Butler matrix beam switching chip. It is realized in 0.13 µm SiGe BiCMOS technology. The chip features four 220 GHz amplifiers with 9 dB of gain followed by the Butler matrix core. A single-pole-four-throw (SP4T) switch is integrated to switch between the different beam directions. Finally an amplifier is used to compensate the losses of the matrix core and the switch. The chip exhibits a 2 dB of insertion loss and draws 104 mA from a 3.3 V supply. It also shows maximum phase error of 15° from the ideal phase states and less than 4 dB rms amplitude variations. The chip occupies 1.5 × 2.4 mm 2 silicon area.
    IEEE Journal of Solid-State Circuits 01/2014; 49(9):1916-1926. · 3.06 Impact Factor
  • IEEE Electron Device Letters 11/2013; 34(11):1391-1393. · 2.79 Impact Factor
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    ABSTRACT: This paper demonstrates a 34 Gbit/s 4:1 multiplexer with 200 mW power dissipation in a 0.25-μm SiGe process. A multiphase clock architecture at half-rate clock is chosen to reduce the power dissipation. In addition, stability issues caused by the capacitively loaded clock driver are studied and a solution is proposed with a suitable compensation circuit. Measurement results are presented as well. The output signals yield open eye diagrams at the highest available test rate of 34 Gbit/s, while presenting rise and fall times below 12 ps.
    9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), Villach, Austria; 06/2013
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    ABSTRACT: In this paper, a fully integrated active backscatter transponder based on the switched injection-locked oscillator (SILO) principle for frequency-modulated continuous-wave radar applications is presented. Furthermore, a method to characterize a SILO amplifier is extended and utilized to measure the system parameters of the presented backscatter tag that operates at 34.45 GHz. It is digitally tunable from 32.7 to 35.4 GHz and reaches an unpulsed output power of 5 dBm. Above injection power levels of -53 dBm, the SILO tag responds phase coherent at its maximum output power. In system measurements, the SILO backscatter transponder was used to perform distance measurements at ranges from 0.7 to 11.5 m. A remarkably good mean distance measurement error of 7 cm with a standard deviation of 10 cm was achieved in a strong multipath environment. The single measurement precision is below 3 mm.
    IEEE Transactions on Microwave Theory and Techniques 05/2013; 61(5):1964-1972. · 2.23 Impact Factor
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    ABSTRACT: This paper describes the design of 220-250-GHz phased-array circuits in 0.13- μm BiCMOS technology. The design aspects of the active and passive devices that are used in the phased-array systems, such as balun, Wilkinson divider, and branch-line coupler, are presented in details. A millimeter-wave vector modulator is designed to support both amplitude and phase control for beam-forming applications. The designed circuits are integrated together to form a four-channel 220-250-GHz phased-array chip. Each channel exhibits 360° phase control with 18 dB of amplitude control. The entire chip draws 167 mA from a 3.3-V supply. The millimeter-wave phase shifting and the low-power consumption makes it ideal for highly integrated scalable beam-forming systems for both imaging, radiometry, and communication applications.
    IEEE Transactions on Microwave Theory and Techniques 01/2013; 61(8):3115-3127. · 2.23 Impact Factor
  • Weiran Cai, R. Tetzlaff, F. Ellinger
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    ABSTRACT: This paper explores the characterization of memristive systems utilizing the characteristive curve of state and analyze the special role of initial condition in such history-dependent systems. The specifically studied system focuses on the titanium dioxide memristor based on the nonlinear ionic drift model of Joglekar. We derive first the characteristic curve of state (CCOS) as the analytical solution of the model to any integer index in the Gaussian hypergeometric form, based on which a characterization approach is then developed. The approach simply converts the complicated history-dependent dynamics into a mapping on the state-flux phase plane, expressing the initial condition as a pure translation along the flux axis, which is analogous to the characterization method for transistors. With this geometric view, we observe that the initial condition operates as an operation point for a memristive system and can effectively influence the orbital shape: the same input signal can produce two distinct orbital shapes when the initial conditions differ. From another point, there ought to be two factors giving rise to the orbital narrowing phenomenon: the frequency and the initial condition. It is pointed out that this is purely caused by the nonlinearity in the model.
    Circuit Theory and Design (ECCTD), 2013 European Conference on; 01/2013
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    ABSTRACT: This paper describes the work that is currently performed in the European FP7 project “A Holistic Approach Toward the Development of the First Responder of the Future”, that is funded by the European Commission under its Security Program. This work aims at providing an overview of a novel emergency network architecture. It represents a complete suite of real-time communication technologies exploitable to support the first responders with information services during disaster events. More specifically, this work will investigate the system architecture, in terms of network structure, the provided communication services, the available technologies and how the recommended solutions will be really implemented.
    Future Network and Mobile Summit (FutureNetworkSummit), 2013; 01/2013
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    ABSTRACT: A receiver frontend consisting of a low noise amplifier (LNA) and a quadrature down-conversion mixer is presented which is optimized for large bandwidth and high input dynamic range. The input bandwidth covers several standards such as DAB, DRM+ and DVB-T. A minimum system noise figure of 5dB is achieved. The 1 dB compression point reaches 7dBm and the input-referred IP3 amounts to 15dBm. A dynamic range of -99dBm to 7dBm and frequency range from 17MHz up to 2 GHz e.g. for DAB is reached. The DC power consumption is 30 mW. The frontend is fabricated in 180nm BiCMOS technology and requires a total area of 0.8 mm2.
    Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on; 01/2013
  • U. Yodprasit, C. Carta, F. Ellinger
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    ABSTRACT: This paper presents design and characterization of a 60-GHz On-Off Keying (OOK) demodulator for low-power ultra-high-speed wireless communications. The core of the demodulator consists of a fully-balanced envelope detector to improve the detection sensitivity compared to the conventional single-ended configuration. A feed-forward offset-compensation technique is utilized to eliminate the DC saturation in the limiting amplifier of the demodulator. Integrated in a 0.25-μm SiGe BiCMOS technology, the demodulator can operate with data rates from 4 Gbps to 11.5 Gbps with 10-12 BER over a 60-GHz carrier. The demodulator consumes 27.5 mW of DC power from a 1.6-V supply voltage, accounting for all bias circuits and a test output buffer. An energy efficiency of 2.4 pJ/bit is achieved at a data rate of 11.5 Gbps.
    Microwave Integrated Circuits Conference (EuMIC), 2013 European; 01/2013
  • R. Wolf, F. Ellinger
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    ABSTRACT: We propose a detector with the properties of a diode detector and with additional voltage gain within the same circuit. Thereto, the principle of the diode detector is implemented by an active control loop. By calculations, it is proven that the behavior is similar to the conventional diode detector. This is validated by measurements of a detector circuit which was implemented as part of an integrated circuit for an envelope following system. Additionally, we show by calculations that it is possible to modify the circuit such that it reveals better properties.
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on; 01/2013
  • N. Joram, R. Wolf, F. Ellinger
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    ABSTRACT: This paper presents enhanced versions of the two most common drivers used in radio frequency integrated circuits: the common-collector stage and the differential pair. The common-collector stage is extended to a totem pole stage and the differential pair to a multi-tanh structure. A key point is the direct comparison of small-signal and large signal measurement results between the standard architectures and enhanced versions in the range from 1GHz to 10GHz. To achieve this, an integrated circuit was manufactured in a 250nm SiGe BiCMOS process containing switchable versions of both drivers and their enhancements. Measurements prove the superior performance of the enhanced versions, showing an increase of dynamic range by 10 to 20dB.
    Microwaves, Communications, Antennas and Electronics Systems (COMCAS), 2013 IEEE International Conference on; 01/2013
  • N. Joram, R. Wolf, F. Ellinger
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    ABSTRACT: A wideband LC voltage controlled oscillator (VCO) is presented in this work. Measurements show a wide relative tuning range of 37.6% from 4.57 GHz to 6.69 GHz with a tuning voltage from 0 to 3 V. Using an integrated divide-by-2 circuit, both the 2.4 GHz and 5.8 GHz ISM bands can be covered. A key feature is the low gain variation, which stays below 12.5 % up to 6GHz and below 33.3% for the whole tuning range. At 5.725 GHz, the phase noise at 1MHz offset was measured to -105dBc/Hz. The VCO core consumes 4mA of current from a 3V supply voltage. It is implemented using an IBM 180nm SiGe BiCMOS process and the core area amounts to 0.5mm×0.4 mm.
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on; 01/2013
  • Jinshu Zhao, R. Wolf, F. Ellinger
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    ABSTRACT: This paper demonstrates a fully integrated power amplifier for long term evolution (LTE) applications. The power amplifier is adopting a tuning capacitor in parallel with the choke inductor, which reduces the DC power consumption of the inductor and decreases the chip size. The total power added efficiency (PAE) is enhanced as a result. The proposed power amplifier is manufactured using a 0.25 μm SiGe hetero-junction bipolar transistor (HBT) process. For a LTE signal with a centre frequency of 2.1 GHz, the PA delivers an output power of 21.3 dBm with the power added efficiency (PAE) of 21% and power gain of 19.5 dB at the 1 dB compression point. For the LTE downlink quadrature amplitude modulation (QAM64) signal at 2.11 GHz with 20 MHz channel bandwidth, the measured ACLR is below -30 dBc for the output power of 18 dBm with PAE above 15%. The error vector magnitude (EVM) specifications are met for LTE 20 MHz bandwidth QPSK modulation scheme, and complied with 1 dB power back-off for QAM16 signal and at 2 dB power back-off for QAM64 modulation scheme. The measurement results verify that the proposed method is promising for the application of the fully integrated PA.
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on; 01/2013
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    ABSTRACT: A 240 GHz direct conversion IQ receiver manufactured in 0.13 SiGe BiCMOS technology with fT/fmax of 300/500 GHz is presented. The receiver consists of a four stage LNA, an active power divider, an LO IQ generation network, and direct down-conversion fundamental mixers. The integrated IQ receiver yields a conversion gain of 18 dB, an 18 dB simulated DSB NF, and a 3 dB bandwidth of 25 GHz. The required 245 GHz LO power is in the order of -10 dBm. The receiver exhibits an IQ amplitude and phase imbalance of 1 dB and 3° respectively. It draws 135 mA from the 3.5 V supply and 20 mA from 2 V.
    Radio Frequency Integrated Circuits Symposium (RFIC), 2013 IEEE; 01/2013
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    ABSTRACT: An overview about research activities in the field of high frequency integrated circuits and communication systems performed within the German cluster project Cool Silicon is given. Cool Silicon is located around Dresden/Silicon Saxony/Germany and features around 50 projects and 100 partners from industry and research institutions, and aims at significantly increasing the energy efficiency of information and communications technologies.
    Microwave & Optoelectronics Conference (IMOC), 2013 SBMO/IEEE MTT-S International; 01/2013
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    ABSTRACT: This paper presents a 245 GHz ASK modulator and demodulator capable of 40 Gbit/s operation. The design is based on 0.13 μm SiGe BiCMOS technology. The chip includes a 245 GHz SPST switch, a wide-band driver amplifier, and an ASK demodulator. The ASK demodulator consists of a power detector followed by a wide-band high gain amplifier. The modulator consumes 31 mW and the demodulator consumes 100 mW.
    Microwave Symposium Digest (IMS), 2013 IEEE MTT-S International; 01/2013
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    ABSTRACT: This paper presents a cascode amplifier for bendable analog and radio-frequency electronic systems in a flexible amorphous indium gallium zinc oxide (a-IGZO) TFT technology, featuring a minimum gate length of 5 μm. The design is optimized for large bandwidth. The circuit design was carried out with a MOSFET LEVEL=3 SPICE model template. The required model parameters were extracted from both DC and AC measured characteristics. Measurements results show 10.5 dB of voltage gain and a 3 dB bandwidth of 2.62 MHz; the small-signal performance was closely predicted by simulations. The presented circuit provides the highest frequency of operation reported for a single-stage cascode amplifier in a-IGZO TFT technology to date.
    Semiconductor Conference Dresden-Grenoble (ISCDG), 2013 International; 01/2013
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    ABSTRACT: We propose a calculation method for transient analysis of linear time-invariant systems basing on the Mikusinski operator. Since signal-flow charts and scattering parameters (S-parameters) are used to describe the networks to analyze, the method is very vivid. The applied S-parameters form operators describing transmission and reflection of power waves from one node to an other of the network's signal-flow chart. Although the usage of operators exhibits some similarities to the Laplace transform, the effect of the operators is interpreted in time domain, and a signal transformation is not required. Thus, the presented calculation method is suitable to vividly analyze dynamic processes on electrical lines.
    Ph.D. Research in Microelectronics and Electronics (PRIME), 2013 9th Conference on; 01/2013

Publication Stats

1k Citations
126.79 Total Impact Points

Institutions

  • 2007–2012
    • Technische Universität Dresden
      Dresden, Saxony, Germany
  • 2002–2010
    • ETH Zurich
      • Electronics Laboratory
      Zürich, ZH, Switzerland
  • 2009
    • Siemens
      München, Bavaria, Germany
  • 2000–2001
    • Eawag: Das Wasserforschungs-Institut des ETH-Bereichs
      Duebendorf, Zurich, Switzerland