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Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 01/2000; 18(3).
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ABSTRACT: An integrated polarization compensator for wavelength-division-multiplexed waveguide demultiplexers is proposed and experimentally demonstrated. It is simple to fabricate, has many advantages over previously reported polarization compensation schemes, and is effective in both etched diffraction grating and arrayed waveguide grating based devices.
IEEE Photonics Technology Letters 03/1999; · 2.19 Impact Factor
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E. Lisicka,
H. Hua,
R. James,
E. Berolo,
W.-J. Wang,
J-J He,
B. Lamontagne,
L. Erickson,
A. Delage, M Davies,
E.S. Koteles
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ABSTRACT: The inroads made by arrayed component technology in the deployment of commercial dense wavelength division multiplex (DWDM) based networks has been limited by a number of issues arising from the hybrid integration of optical and electronic array elements. These are not only due to the complexities encountered during fabrication of laser arrays but are also related to the thermal management of these arrays, laser drivers and receiver electronics and the optoelectronic packaging of these components. This paper discusses the optoelectronic packaging and hybrid integration of an eight-channel DWDM transmitter and receiver to be used in an optical add/drop module (OADM). The OADM operates in a synchronous optical network (SONET) environment at OC-48 (2.488 Gb/s), with six differential add/drop channels, three electrical, and three optical
Electronics Manufacturing Technology Symposium, 1999. Twenty-Fourth IEEE/CPMT; 02/1999
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ABSTRACT: Addresses some key issues in integrated waveguide demultiplexer technology including insertion loss, inter-channel crosstalk, and polarization sensitivity and compares and contrasts the two different contenders, etched diffraction grating and arrayed waveguide demultiplexers. Theoretical and experimental results of the effects of grating patterning defects on crosstalk are presented, as well as a novel, easy-to-make, integrated polarization compensator
Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on; 02/1999
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ABSTRACT: A very simple technique for controlling the inherent birefringence
of any planar waveguide demultiplexer, which involves no additional
processing and which is effective in any material system, is proposed,
modeled, and verified by experiment
Optical Fiber Communication Conference, 1999, and the International Conference on Integrated Optics and Optical Fiber Communication. OFC/IOOC '99. Technical Digest; 02/1999
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ABSTRACT: A grating-assisted surface-emitting laser transmitter with image-forming capability has been fabricated. The laser transmitter consists of an InP-InGaAsP distributed Bragg reflector ridge laser emitting at 1.5 /spl mu/m, a semiconductor optical amplifier and a computer-generated holographic out-coupler. The area of the out-coupler is 80 /spl mu/m/spl times/80 /spl mu/m. The image produced by the out-coupler is focused at 3 cm above the laser surface and each circular spot has a diameter of 0.6 mm.
IEEE Photonics Technology Letters 01/1999; · 2.19 Impact Factor
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S. Charbonneau,
E.S. Koteles,
P.J. Poole,
J.J. He,
G.C. Aers,
J. Haysom,
M. Buchanan,
Y. Feng,
A. Delage,
F. Yang, M. Davies,
R.D. Goldberg,
P.G. Piva,
I.V. Mitchell
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ABSTRACT: Intermixing the wells and barriers of quantum-well (QW) laser
heterostructures generally results in an increase in the bandgap energy
and is accompanied by changes in the refractive index. A technique,
based on ion implantation-induced QW intermixing, has been developed to
enhance the quantum-well intermixing (QWI) rate in selected areas of a
wafer. Such processes offer the prospect of a powerful and simple
fabrication route for the integration of discrete optoelectronic devices
and for forming photonic integrated circuits
IEEE Journal of Selected Topics in Quantum Electronics 08/1998; · 3.78 Impact Factor
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ABSTRACT: We report on recent results on InGaAsP-InP-based Rowland circle
grating demultiplexers. Simulations and experiments on the effects of
inherent fabrication errors such as the pixelation effect, switching
errors, and field distortion in the grating patterning process are
presented. These results suggest sources of the cross talk in the
wavelength demultiplexers and ways to reduce them as well as the
limitations of currently available technologies
Lasers and Electro-Optics, 1998. CLEO 98. Technical Digest. Summaries of papers presented at the Conference on; 06/1998
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ABSTRACT: We present detailed modeling and experimental results for an improved design of an InGaAsP-InP wavelength demultiplexer based on a monolithically integrated Rowland circle grating. The design incorporated ten wavelength channels at 1.55 μm with a uniform spacing of 2 nm. The total on-chip loss was about 10 dB and the crosstalk between adjacent channels was as low as -25 dB. It was shown that low-loss etched turning mirrors can reduce the total on-chip loss by about 4 dB compared to traditional 90° curved multimode waveguides. By replacing standard flat grating facets with retro-reflecting V-shaped facets in the echelle grating, the loss was further reduced by 4 dB. Polarization independent operation within a passband of 0.5 nm was achieved by using multimode output waveguides. The potential sources producing the crosstalk have been analyzed and fabrication modifications for further improvement are suggested
Journal of Lightwave Technology 05/1998; 16(4):631-638. · 2.78 Impact Factor
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ABSTRACT: We present detailed modeling and experimental results for an
improved design of an InGaAsP/InP wavelength demultiplexer based on a
monolithically-integrated Rowland circle waveguide grating fabricated
using chemically-assisted ion beam etching. The design incorporates ten
wavelength channels at 1.55 μm with a uniform spacing of 2 nm and
multimode output waveguides to flatten channel response and reduce
sensitivity to polarization
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest; 03/1998
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ABSTRACT: The use of uncoated facets on the echelle grating in a monolithic
InP WDM demux leads to a reflection loss of 5.65 dB for an index of
refraction of approximately 3.18. This loss can be largely eliminated by
coating the out of plane facet with gold, but it involves another
processing step. An alternative is to use total internal reflecting
(retro-reflecting) facets. We have fabricated a WDM demultiplexer in InP
for use at 1550 nm using an echelle with retro-reflecting facets and
have compared its performance to another demux on the same wafer using
an echelle with flat facets
Vertical-Cavity Lasers, Technologies for a Global Information Infrastructure, WDM Components Technology, Advanced Semiconductor Lasers and Applications, Gallium Nitride Materials, Processing, and Devi; 09/1997
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ABSTRACT: High-energy ion implantation is used to spatially modify the bandgap of a 1.5-/spl mu/m laser structure to fabricate a broad spectrum light emitting diode (LED). An increase in the emission full width half maximum (FWHM) from 28 nm to 90 nm is observed. An absorbing section at one end of the device is used to suppress lasing operation and remove Fabry-Perot noise.
IEEE Photonics Technology Letters 10/1996; · 2.19 Impact Factor
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ABSTRACT: We describe an approximate k·p theory for strained quantum
wells that includes the bulk valence-band mixing effect and simplifies
the envelope function approximation for the subband calculation. We show
that such an approach provides analytical results for calculating the
quasi-Fermi level and optical gain. We present useful material
parameters over the whole parameter space of the InGaAsP system based on
the approximate k·p theory. Our approximate k·p subband
structure is compared with the results from the exact k·p theory.
Using a minimal set of fitting parameters, we show that the calculated
gain spectrum agrees reasonably well with experimental data for the gain
spectrum and its temperature dependence
IEEE Journal of Quantum Electronics 03/1994; · 1.88 Impact Factor
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ABSTRACT: Strain compensation allows the synthesis of infinitely thick heterostructures with many highly strained quantum wells. Design criteria are given for optimized strain and thickness parameters in several device geometries. Strain compensation, using alternating layers of opposite strain, is quantitatively treated using an energy balance analysis. The upper bound to stability for strained multiple quantum wells with and without strain compensation is defined for geometries typically used in optoelectronic devices. Highly metastable structures (composed of many layers of high strain and/or thickness) require low epitaxy temperatures to avoid strain relaxation during growth of individual strained layers, prior to their stabilization in a strain compensated structure.
Applied Physics Letters 02/1994; · 3.84 Impact Factor
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ABSTRACT: Reports the first study of the temperature dependence of the DC characteristics of InP-based double heterostructure bipolar transistors which have a quaternary collector. The quaternary layer was spaced away from the base-collector junction to improve the HBT characteristics. The devices exhibited useful gain over seven orders of magnitude of current and had breakdown voltages of approximately 8 V. The DC gain decreased with decreasing temperature whereas the ideality factors increased.
Electronics Letters 09/1993; · 0.96 Impact Factor
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S. Charbonneau,
G. C. Aers,
K. A. McGreer, M. Davies,
D. Landheer,
Z.‐M. Li,
A. Delage,
M. Dion,
B. Takasaki,
D. Conn,
D. Moss
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ABSTRACT: We report extremely efficient (∼100% internal quantum efficiency) and high‐speed (∼120 ps lifetime) photodetection in a reversed biased InGaAs/InP ridge‐waveguide multiple quantum well p‐i‐n laser structure operating at 1.54 μm. The impulse response of this monolithically integratable detector is analyzed in terms of the escape of photogenerated carriers from the InGaAsP quantum well barrier to the InP cladding contact layer.
Applied Physics Letters 08/1993; · 3.84 Impact Factor
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ABSTRACT: The authors consider strain compensation for typical multiple quantum well (MQW) laser structures using an energy balance model and determine the theoretical limitations of structural stability based on uncompensated reliability data from the literature. Strain compensation is the technique used to balance tensile and compressive forces in alternating layers to render the stack strain neutral. Strain compensation must be given careful consideration in the design and synthesis of strain neutral structures. Strain compensation holds the promise of reduced defect densities with enhanced stability and should permit very highly strained QW optoelectronic devices to be fabricated which are predicted to have considerably enhanced performance and reliability
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
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ABSTRACT: The authors have fabricated double heterostructure bipolar
transistors (HBTs) which use an InP wide band-gap emitter and a
quaternary collector. The quaternary composition was chosen to be that
which gives a 1.13 eV bandgap used in lasers which operate at 1.1 μm.
This gap compares with the 1.35eV bandgap of the InP emitter and 0.75 eV
for lattice-matched InGaAs. The composition for the quaternary was In:
0.87, Ga: 0.13, As: 0.29; P: 0.71. The collector was moved away from the
base-collector junction to help improve the characteristics of the HBT.
The devices exhibited good ideality factors with a gain of up to
approximately 60 and breakdown voltages of about 8 V. Derived electron
ionization coefficients are lower than literature values but depend
strongly on the estimated fields in the collector
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
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ABSTRACT: The authors have implemented a simplified Luttinger-Kohn theory to model the optical gain, spontaneous emission and quantum-well carrier concentration of a strained quantum-well laser. The model is based on an anisotropic effective mass approximation. Parameters of the effective mass interpolation over the whole quaternary parameters space of InGaAsP are presented
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
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ABSTRACT: The authors have demonstrated that a conventional multiple quantum well ridge waveguide laser can also be operated as a high-speed photodetector with an internal quantum efficiency = 100% at a reverse bias of 5 V. The speed of this detector is limited by the escape of photo-generated carriers from the InGaAsP barriers to the InP cladding layer. The processes controlling the time response of the detector are considered. The photo-generated carriers must escape from the quantum well, diffuse across the InGaAsP barrier regions to the interface with the doped InP contacts and then escape over this barrier. The carrier escape mechanism is therefore a combination of thermionic emission, phonon-assisted tunneling and direct tunneling from the quantum well region. The carrier escape time is limited by the slowest of these processes
Indium Phosphide and Related Materials, 1993. Conference Proceedings., Fifth International Conference on; 05/1993
