Publications (2)2.15 Total impact
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Article: Influence of gamma radiation on the optical properties of ZnSe nanocrystalline thin films
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ABSTRACT: The effect of gamma (γ) irradiation on the absorption spectra and the optical energy bandwidth of ZnSe nanocrystalline thin films have been studied. Thin films of different thicknesses from 20 to 120nm were deposited by Inert gas condensation technique at constant temperature of 300K and under pressure 2×10−3 Torr of Argon gas flow. The optical transmission (T) and optical reflection (R) in the wavelength range 190–2,500nm of ZnSe nanocrystalline thin films were measure for unirradiated and irradiated films. The dependence of the absorption coefficient α on photon energy hν was determined for different γ-doses irradiated films. The ZnSe thin films show direct allowed interband transition by γ-doses. Both the absorption coefficient (α) and optical energy bandwidth were found to be γ-dose dependent. The optical energy band width has been decreased by irradiated of γ-doses. The Egn values of irradiated thin films by 34.5Gy of γ-doses were recovered to nearly their initial values after 100days at 300K.Journal of Materials Science Materials in Electronics 05/2012; 22(8):1195-1202. · 1.08 Impact Factor -
Article: Preparation and structural characterization of Zn1−xMnxSe thin films
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ABSTRACT: Undoped and Mn doped ZnSe nanoparticles thin films of thickness ranging from 20 to 120nm have been successfully synthesized via inert gas condensation (IGC) technique with constant Argon gas flow rate and deposition temperature 300K. The energy dispersive X-ray analysis (EDX) for freshly deposited Zn1−xMnxSe thin films were carried out and revealed that Mn contents (x) were 0, 0.05, 0.16 and 0.25. The as-prepared deposited thin films of different thickness were examined using transmission electron microscope (TEM) and showed that all films were nanocrystalline with particle size ranging from 4.1 to 6.6nm. The grazing incident in-plane X-ray diffraction (GIIXD) patterns verified nanocrystalline single phase zinc blende structure for 80nm film thickness for all examined Zn1−xMnxSe compound films. A broadening of main characteristic lines (111), (220) and (311) of cubic phase was observed and was attributed to the lower particle size in nanocrystalline examined Zn1−xMnxSe compound films.Journal of Materials Science Materials in Electronics 05/2012; 22(7):825-832. · 1.08 Impact Factor
