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ABSTRACT: In this paper, we describe the design, simulation, and on-wafer measurements of Submillimeter-wave Monolithic Integrated Circuit (S-MMIC) amplifiers having gain in the 400-500 GHz range. A single-stage amplifier and two three-stage amplifiers with similar topology are presented, and have been fabricated in Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor (HEMT) process. The circuits were fabricated using different indium channel compositions on different wafers, and comparison of the results based on the indium content will be presented. We have performed on-wafer S-parameter calibration and measurements using newly developed WR2.2 waveguide wafer probes from 325-508 GHz. We measured approximately 5 dB of gain for the single stage amplifier at 437 GHz, and approximately 10 dB of gain at 474 GHz for a three-stage amplifier, with over 9 dB of gain at 490 GHz.
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International; 07/2011
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V. Radisic,
W.R. Deal,
K.M.K.H. Leong,
X.B. Mei,
W. Yoshida,
Po-Hsin Liu,
J. Uyeda,
A. Fung, L. Samoska,
T. Gaier,
R. Lai
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ABSTRACT: In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high f <sub>MAX</sub> InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
IEEE Transactions on Microwave Theory and Techniques 08/2010; · 1.85 Impact Factor
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M. Micovic,
A. Kurdoghlian,
K. Shinohara,
S. Burnham,
I. Milosavljevic,
M. Hu,
A. Corrion,
A. Fung,
R. Lin, L. Samoska,
P. Kangaslahti,
B. Lambrigtsen,
P. Goldsmith,
W.S. Wong,
A. Schmitz,
P. Hashimoto,
P.J. Willadsen,
D.H. Chow
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ABSTRACT: We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International; 06/2010
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ABSTRACT: In this letter, a rectangular waveguide to conductor backed-coplanar waveguide electromagnetic transition suitable of operating at sub-millimeter wave frequencies is demonstrated. The dipole based transition is fabricated using InP monolithic microwave integrated circuit technology. The compact transition eliminates wire-bonding problems (return loss and insertion loss) and is suitable for direct integration of sub-millimeter wave monolithic integrated circuits. Measured transition loss of ~1 dB has been achieved in the frequency range of 340 to 380 GHz.
IEEE Microwave and Wireless Components Letters 07/2009; · 1.72 Impact Factor
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ABSTRACT: In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.
Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
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ABSTRACT: A low Terahertz (324 GHz) frequency generator is realized in 90 nm CMOS by linearly superimposing quadruple (N=4) phase shifted fundamental signals at one fourth of the output frequency (81 GHz). The developed technique minimizes the fundamental, second and third order harmonics without extra filtering and results in a high fundamental-to-4 th harmonic signal conversion ratio of 0.17 or -15.4 dB. The demonstrated prototype produces a calibrated -46 dBm output power when biased at 1 V and 12 mA with 4 GHz tuning range and extrapolated phase noise of -91 dBc/Hz at 10 MHz frequency offset. The linear superposition (LS) technique can be generalized for all even number cases (N=2k, where k=1,2,3,4,...,n) with different tradeoffs in output power and frequency. As CMOS continues to scale, we anticipate the LS N=4 VCO to generate signals beyond 2 Terahertz by using 22 nm CMOS and produce output power up to -1.5 dBm with 1.7% power added efficiency with an LS VCO + Class-B Power Amplifier cascaded circuit architecture.
IEEE Journal of Solid-State Circuits 01/2009; · 3.23 Impact Factor
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ABSTRACT: In this paper, we describe the design and measurements of a MMIC amplifier-based multi-chip transmit/receive (T/R) Module for radar applications in G-band (140-220 GHz). The module is design with InP HEMT MMIC power amplifiers for the transmit channel and InP MMIC low noise amplifiers for the receive channel. Arrays of these 150 GHz T/R modules could be used for applications such as automotive radar and landing radar.
Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on; 10/2008
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W.R. Deal,
X.B. Mei,
V. Radisic,
B. Bayuk,
A. Fung,
W. Yoshida,
P.H. Liu,
J. Uyeda, L. Samoska,
T. Gaier,
R. Lai
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ABSTRACT: In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is accomplished by using compact matching networks consisting of coplanar waveguide transmission lines and metal-insulator-metal capacitors to match each of the three amplifier stages. The resulting amplifier achieves a peak gain of 16.5 dB at 260 GHz. Power measurements indicate that the chip achieves >5.9 mW (unsaturated) of output power and 4% power added efficiency at a frequency of 270 GHz, where the output power is limited by the available source drive power. This power level from a single transistor represents a significant improvement at this frequency band.
IEEE Microwave and Wireless Components Letters 09/2008; · 1.72 Impact Factor
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ABSTRACT: In this paper, a 0.27 mW fundamental oscillator module operating at 330 GHz is presented. The MMIC in the module contains both the oscillator circuit and waveguide probes integrated on the same InP substrate. The oscillator is implemented in coplanar waveguide (CPW) technology and uses advanced high fMAX 35 nm InP HEMT transistor in a common gate configuration. The integrated radial E-plane probe has been designed to operate over a frequency range of 300-350 GHz, using WR2.2 for the input and output waveguide. A free-running frequency of 330.5 GHz has been measured by down-converting the signal to an IF frequency observable on a spectrum analyzer. This is the first oscillator module above 300 GHz and demonstrates that fundamental signal generation at submillimeter wave frequencies can be simply and reliably generated.
Microwave Symposium Digest, 2008 IEEE MTT-S International; 07/2008
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W.R. Deal,
X.B. Mei,
V. Radisic,
B. Bayuk,
A. Fung,
W. Yoshida,
P.H. Liu,
J. Uyeda, L. Samoska,
T. Gaier,
R. Lai
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ABSTRACT: In this paper, a new balanced sub-millimeter wave power amplifiers is presented. The amplifier uses CPW-grounded MIM capacitors to form low-loss, lumped element matching networks and uses a branchline coupler to achieve requisite quadrature phase shifts. The balanced amplifier achieves 12-dB small signal gain and 6.1-mW output power (not saturated) at a center frequency of 270-GHz. The high gain allows the amplifier to reach a moderate Power Added Efficiency (PAE) of 5.25% at the highest drive power. The results in this paper are the highest reported output powers achieved from a solid state amplifier at these frequencies, and were achieved with a high f<sub>MAX</sub> InP HEMT process.
Microwave Symposium Digest, 2008 IEEE MTT-S International; 07/2008
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ABSTRACT: We present new results for a two-port vector network analyzer swept-frequency test set for the 325-508 GHz frequency band. The calibrated dynamic range performance in the full frequency band is discussed. Using a line-reflect-line calibration procedure, the dynamic ranges for return and insertion losses of better than 20 and 35 dB, respectively, are achieved. We examine the performance of the calibrated test set for the first time by measuring S-parameters of passive waveguide components and comparing data with electromagnetic simulations.
IEEE Transactions on Instrumentation and Measurement 07/2008; · 1.21 Impact Factor
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ABSTRACT: In this paper, we report on the first demonstration of monolithically integrated waveguide transitions in a submillimeter-wave monolithic integrated circuit (S-MMIC) amplifier module. We designed the module for a targeted frequency range of 300-350 GHz, using WR2.2 for the input and output waveguides. The waveguide module utilizes radial -plane transitions from S-MMIC to waveguide. We designed back-to-back radial probe transitions separated by thru transmission lines to characterize the module, and have incorporated the radial -plane transitions with an S-MMIC amplifier, fabricated monolithically as a single chip. The chip makes use of an S-MMIC process and amplifier design from the Northrop Grumman Corporation, Redondo Beach, CA, using 35-nm gate-length InP transistors. The integrated module design eliminates the need for wire bonds in the RF signal path, and enables a drop-in approach for minimal assembly. The waveguide module includes a channel design, which optimizes the -plane probe bandwidth to compensate for an S-MMIC width, which is larger than the waveguide dimension, and is compatible with S-MMIC fabrication and design rules. This paper demonstrates for the first time that waveguide-based S-MMIC amplifier modules with integrated waveguide transitions can be successfully operated at submillimeter-wave frequencies.
IEEE Transactions on Microwave Theory and Techniques 07/2008; · 1.85 Impact Factor
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A.K. Fung,
T. Gaier, L. Samoska,
W.R. Deal,
V. Radisic,
X.B. Mei,
W. Yoshida,
P.S. Liu,
J. Uyeda,
M. Barsky,
R. Lai
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ABSTRACT: We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.
IEEE Microwave and Wireless Components Letters 07/2008; · 1.72 Impact Factor
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R. Lai,
W.R. Deal,
X.B. Mei,
W. Yoshida,
J. Lee,
L. Dang,
J. Wang,
Y.M. Kim,
P.H. Liu,
V. Radisic,
M. Lange,
T. Gaier, L. Samoska,
A. Fung
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ABSTRACT: In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest gain greater than 15 dB (greater than 5 dB per stage) at 340 GHz.
Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on; 06/2008
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V. Radisic,
D. Sawdai,
D. Scott,
W.R. Deal,
Linh Dang,
D. Li,
A. Cavus,
A. Fung, L. Samoska,
R. To,
T. Gaier,
R. Lai
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ABSTRACT: In this letter, 184 and 255 GHz single-stage heterojunction bipolar transistor (HBT) amplifiers are reported. Each amplifier uses a single-emitter 0.4 ??m 15 ??m InP HBT device with maximum frequency of oscillation (f<sub>max</sub>) greater than 500 GHz and of 200 GHz. The 183 GHz single-stage amplifier has demonstrated gain of 4.3 ?? 0.4 dB for all sites on the wafer. The 255 GHz amplifier has measured gain of 3.5d B and demonstrates the highest frequency measured HBT amplifier gain reported to date. Both amplifiers show excellent agreement with original simulation.
IEEE Microwave and Wireless Components Letters 05/2008; · 1.72 Impact Factor
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ABSTRACT: This paper presents CMOS for terahertz applications, substantially extended the operation range of deep-submicron CMOS by using a linear superposition method, in which we have realized a 324GHz frequency generator in 90nm digital CMOS with 4GHz tuning range under 1V supply voltage.
Solid-State Circuits Conference, 2008. ISSCC 2008. Digest of Technical Papers. IEEE International; 03/2008
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D. Pukala, L. Samoska,
T. Gaier,
A. Fung,
X.B. Mei,
W. Yoshida,
J. Lee,
J. Uyeda,
P.H. Liu,
W.R. Deal,
V. Radisic,
R. Lai
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ABSTRACT: In this letter, we describe the design, fabrication, simulation, and measured performance of a single-stage and three-stage 320 GHz amplifier using Northrop Grumman Corporation's (NGC) 35-nm InP high electron mobility transistor submillimeter-wave monolithic integrated circuit (S-MMIC) process. On-wafer S-parameter measurements using an extended waveguide band WR3 vector network analyzer system were performed from 210-345 GHz. We measured 5 dB of gain for the single-stage amplifier at 340 GHz and 13-15 of gain from 300-345 GHz for the three-stage S-MMIC amplifier.
IEEE Microwave and Wireless Components Letters 02/2008; · 1.72 Impact Factor
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R. Lai,
X.B. Mei,
W.R. Deal,
W. Yoshida,
Y.M. Kim,
P.H. Liu,
J. Lee,
J. Uyeda,
V. Radisic,
M. Lange,
T. Gaier, L. Samoska,
A. Fung
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ABSTRACT: In this paper, we present the latest advancements of sub 50 nm InGaAs/lnAIAs/lnP high electron mobility transistor (InP HEMT) devices that have achieved extrapolated Fmax above 1 THz. This extrapolation is both based on unilateral gain (1.2 THz) and maximum stable gain/maximum available gain (1.1 THz) extrapolations, with an associated fT of 385 GHz. This extrapolation is validated by the demonstration of a 3-stage common source low noise MMIC amplifier which exhibits greater than 18 dB gain at 300 GHz and 15 dB gain at 340 GHz.
Electron Devices Meeting, 2007. IEDM 2007. IEEE International; 01/2008
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IEEE T. Instrumentation and Measurement. 01/2008; 57:1166-1170.
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V. Radisic,
D. Sawdai,
D. Scott,
W.R. Deal,
Linh Dang,
D. Li,
J. Chen,
A. Fung, L. Samoska,
T. Gaier,
R. Lai
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ABSTRACT: In this paper, a sub-millimeter-wave HBT oscillator is reported. The oscillator uses a single-emitter 0.3 m15 m InP HBT device with maximum frequency of oscillation greater than 500 GHz. The passive components of the oscillator are realized in a two metal process with benzocyclobutene used as the primary transmission line dielectric. The oscillator is implemented in a common base topology due to its inherent instability. The design includes an on-chip resonator, output matching circuitry, and injection locking port. A free-running frequency of 311.6 GHz has been measured by down-converting the signal. Additionally, injection locking has been successfully demonstrated with up to 17.8 dB of injection-locking gain. This is the first fundamental HBT oscillator operating above 300 GHz.
IEEE Transactions on Microwave Theory and Techniques 12/2007; · 1.85 Impact Factor
