L. Samoska

California Institute of Technology, Pasadena, California, United States

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Publications (71)58.94 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: A compact W-band heterodyne receiver module populated with MMIC LNAs designed and fabricated using a 35 nm InP HEMT process, and an IQ mixer designed and fabricated using the UMS Schottky diode process is developed as the prototype for Argus, a 16-pixel focal plane array to be deployed on the 100-meter Robert C. Byrd Green Bank Telescope in West Virginia to study star formation. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (26 K) temperatures. A minimum receiver noise temperature of 27 K was achieved, with less than 45 K noise and more than 20 dB gain in the 85 GHz to 116 GHz band. The band-averaged noise temperature is 34 K and 249 K for a physical temperature of 26 K and 300 K, respectively. The IQ amplitude and phase balance shows image rejection better than 15 dB over 90 percent of the band with constant current operation of both mixers. Image rejection better than 25 dB is measured when optimized currents are used to drive the I and Q mixers.
    2014 IEEE/MTT-S International Microwave Symposium - MTT 2014; 06/2014
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    ABSTRACT: In this work, we report on developments toward ultra-low noise amplifier modules for the WR4 frequency range, covering 170-260 GHz. The amplifiers in question utilize 35 nm HEMT transistors on a 50 μm thick InP substrate, and were developed at NGC. While recent work in this frequency band has demonstrated the usefulness and advanced technology of utilizing integrated waveguide transitions fabricated on the high dielectric constant MMIC amplifiers themselves, we present evidence here that more standard, cost effective techniques like merging low-loss quartz probes with short wire bonds can provide excellent noise performance, even at these high frequencies. The amplifiers discussed in this paper demonstrate a record 600K noise (4.8 dB) at 220 GHz and 700K (5.2 dB) noise at 240 GHz.
    2014 IEEE/MTT-S International Microwave Symposium - MTT 2014; 06/2014
  • European Microwave Integrated Circuit Conference (EuMIC), 2014 9th; 01/2014
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    ABSTRACT: Recent advances in the development of InP HEMT amplifiers have produced a breakthrough in the cryogenic noise performance of these devices. Caltech's Cahill Radio Astronomy Lab (CRAL), JPL and Northrop Grumman (NGAS) are working to produce new amplifiers which can exploit this improved performance for radio astronomy. In parallel, these new amplifiers are being integrated into a family of miniaturized modular receivers which have wide application as focal plane arrays. Such arrays will have a major impact on a diverse range of scientific goals, such as measurement of integrated CO from the Epoch of Reionization, efficient spectroscopic and continuum mapping of Galactic emission and measurement of the B-mode polarization of the cosmic microwave background. We report on these developments and prospects for the future.
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    ABSTRACT: We present the design and performance of low noise amplifier modules in the WR3 frequency band (220-325 GHz). E-plane split waveguide blocks are used with 25 μm gallium arsenide membrane radial probes to couple signal into and out of 35 nm gate length indium phosphide monolithic millimeter-wave integrated circuit (MMIC) amplifiers. Design, fabrication and testing of the probe transitions and amplifier modules are discussed. For a cascode amplifier module cryogenically cooled to 20 K, we measure a minimum noise temperature of 120 K at 258 GHz and noise temperatures less than 145 K between 234-268 GHz. To our knowledge, these results are the lowest LNA noise temperatures at these frequencies reported to date.
    Microwave Integrated Circuits Conference (EuMIC), 2013 European; 01/2013
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    ABSTRACT: We present two low-noise amplifiers for the frequency range of 160 to 270 GHz. The amplifiers were fabricated using a 35-nm InP HEMT technology and designed for room temperature and cryogenic operation. A four-stage amplifier in a common-source topology and a three-stage amplifier utilizing a cascode stage at the output achieve 15 to 25-dB on-wafer measured gain from 160 to 270 GHz. When packaged in WR5 waveguide housings the amplifiers exhibit room temperature measured noise of 600 to 760 K from 160 to 220 GHz. When cryogenically cooled the three-stage amplifier shows a noise of 80 to 115 K over the range of 164 to 220 GHz. Furthermore, our initial room temperature measurements show a noise figure of 7-8 dB over the 220 to 252 GHz range for a four-stage amplifier packaged in a WR3 waveguide housing.
    2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 10/2012
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    ABSTRACT: In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplifiers (LNAs) for W-Band which have a noise temperature of 30K or better over a wide bandwidth when cryogenically cooled. The LNAs were designed and fabricated in NGC's InP HEMT MMIC process having 35 nm gate length and employing an InAs Composite Channel (IACC). A two-stage amplifier exhibits room temperature S21 gain of 15–18 dB, and cryogenic gain of 20 dB with minimum noise temperature of 25K at 95 GHz, and less than 40K noise temperature between 75–105 GHz. A three-stage amplifier exhibits 29 dB of S21 gain, and a cryogenic noise temperature below 30K over the range of 94–109 GHz. We discuss the design of the amplifiers, measured and simulated S-parameters, and cryogenic measurements. To our knowledge, these are the highest frequency and lowest noise temperatures ever reported for InP cryogenic LNAs covering W-Band.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
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    ABSTRACT: We currently achieve 3.4 dB noise figure at 183GHz and 2.1 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
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    ABSTRACT: We present noise temperature and gain measurements of a W-band heterodyne module populated with MMIC LNAs designed and fabricated using a 35 nm InP HEMT process. The module has a WR-10 waveguide input. GPPO connectors are used for the LO input and the I and Q IF outputs. The module is tested at both ambient (300 K) and cryogenic (25 K) temperatures. At 25 K physical temperature, the module has a noise temperature in the range of 27–45 K over the frequency band of 75–111 GHz. The module gain varies between 15 dB and 27 dB. The band-averaged module noise temperature of 350 K and 33 K were measured over 80–110 GHz for the physical temperature of 300 K and 25 K, respectively. The resulting cooling factor is 10.6.
    Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International; 01/2012
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    ABSTRACT: In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high f <sub>MAX</sub> InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.
    IEEE Transactions on Microwave Theory and Techniques 08/2010; DOI:10.1109/TMTT.2010.2050105 · 2.94 Impact Factor
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    ABSTRACT: We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology, the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 μm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
    Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International; 06/2010
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    ABSTRACT: In this letter, a rectangular waveguide to conductor backed-coplanar waveguide electromagnetic transition suitable of operating at sub-millimeter wave frequencies is demonstrated. The dipole based transition is fabricated using InP monolithic microwave integrated circuit technology. The compact transition eliminates wire-bonding problems (return loss and insertion loss) and is suitable for direct integration of sub-millimeter wave monolithic integrated circuits. Measured transition loss of ~1 dB has been achieved in the frequency range of 340 to 380 GHz.
    IEEE Microwave and Wireless Components Letters 07/2009; DOI:10.1109/LMWC.2009.2020043 · 2.24 Impact Factor
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    ABSTRACT: In this paper, we present the latest advancements of active sub-MMW integrated circuits (S-MMIC) based on 35 nm InP HEMT technology. The current state-of-the-art results include the first demonstrated LNA, PA and fundamental oscillator modules above 300 GHz.
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on; 06/2009
  • L. Samoska, D. Pukala, M. Soria, G. Sadowy
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    ABSTRACT: In this paper, we describe the design and measurements of a MMIC amplifier-based multi-chip transmit/receive (T/R) Module for radar applications in G-band (140-220 GHz). The module is design with InP HEMT MMIC power amplifiers for the transmit channel and InP MMIC low noise amplifiers for the receive channel. Arrays of these 150 GHz T/R modules could be used for applications such as automotive radar and landing radar.
    Infrared, Millimeter and Terahertz Waves, 2008. IRMMW-THz 2008. 33rd International Conference on; 10/2008
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    ABSTRACT: In this letter, a new power amplifier topology is demonstrated which allows the use of large (120 mum/transistors) at extremely high frequency. This is accomplished by using compact matching networks consisting of coplanar waveguide transmission lines and metal-insulator-metal capacitors to match each of the three amplifier stages. The resulting amplifier achieves a peak gain of 16.5 dB at 260 GHz. Power measurements indicate that the chip achieves >5.9 mW (unsaturated) of output power and 4% power added efficiency at a frequency of 270 GHz, where the output power is limited by the available source drive power. This power level from a single transistor represents a significant improvement at this frequency band.
    IEEE Microwave and Wireless Components Letters 09/2008; DOI:10.1109/LMWC.2008.2001017 · 2.24 Impact Factor
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    ABSTRACT: In this paper, a 0.27 mW fundamental oscillator module operating at 330 GHz is presented. The MMIC in the module contains both the oscillator circuit and waveguide probes integrated on the same InP substrate. The oscillator is implemented in coplanar waveguide (CPW) technology and uses advanced high fMAX 35 nm InP HEMT transistor in a common gate configuration. The integrated radial E-plane probe has been designed to operate over a frequency range of 300-350 GHz, using WR2.2 for the input and output waveguide. A free-running frequency of 330.5 GHz has been measured by down-converting the signal to an IF frequency observable on a spectrum analyzer. This is the first oscillator module above 300 GHz and demonstrates that fundamental signal generation at submillimeter wave frequencies can be simply and reliably generated.
    Microwave Symposium Digest, 2008 IEEE MTT-S International; 07/2008
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    ABSTRACT: In this paper, a new balanced sub-millimeter wave power amplifiers is presented. The amplifier uses CPW-grounded MIM capacitors to form low-loss, lumped element matching networks and uses a branchline coupler to achieve requisite quadrature phase shifts. The balanced amplifier achieves 12-dB small signal gain and 6.1-mW output power (not saturated) at a center frequency of 270-GHz. The high gain allows the amplifier to reach a moderate Power Added Efficiency (PAE) of 5.25% at the highest drive power. The results in this paper are the highest reported output powers achieved from a solid state amplifier at these frequencies, and were achieved with a high f<sub>MAX</sub> InP HEMT process.
    Microwave Symposium Digest, 2008 IEEE MTT-S International; 07/2008
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    ABSTRACT: We present new results for a two-port vector network analyzer swept-frequency test set for the 325-508 GHz frequency band. The calibrated dynamic range performance in the full frequency band is discussed. Using a line-reflect-line calibration procedure, the dynamic ranges for return and insertion losses of better than 20 and 35 dB, respectively, are achieved. We examine the performance of the calibrated test set for the first time by measuring S-parameters of passive waveguide components and comparing data with electromagnetic simulations.
    IEEE Transactions on Instrumentation and Measurement 07/2008; DOI:10.1109/TIM.2007.915125 · 1.71 Impact Factor
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    ABSTRACT: We present on-wafer power measurements of 35 nm gate length InP HEMT amplifiers at 330 GHz. Various amplifiers are examined. The maximum output power of 1.78 mW is measured from a three stage amplifier. Additional output power may be possible but limited by our input power source level to saturate amplifiers. This result is the highest frequency on-wafer power measurement we are aware of reported to date, and demonstrates the technique we utilize to be a fast method of evaluating power performance of submillimeter wave amplifiers without the need to package devices.
    IEEE Microwave and Wireless Components Letters 07/2008; DOI:10.1109/LMWC.2008.922713 · 2.24 Impact Factor
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    ABSTRACT: In this paper, we present the latest advancements of short gate length InGaAs/InAlAs/InP high electron mobility transistor (InP HEMT) devices that have achieved extremely high extrapolated Fmax above 1 THz. The high Fmax is validated through the first demonstrations of sub-MMW MMICs (s-MMICs) based on these devices including the highest fundamental transistor oscillator MMIC at 347 GHz and the highest gain greater than 15 dB (greater than 5 dB per stage) at 340 GHz.
    Indium Phosphide and Related Materials, 2008. IPRM 2008. 20th International Conference on; 06/2008

Publication Stats

1k Citations
58.94 Total Impact Points

Institutions

  • 2001–2012
    • California Institute of Technology
      • Jet Propulsion Laboratory
      Pasadena, California, United States
  • 2007–2010
    • Northrop Grumman
      Falls Church, Virginia, United States
  • 1996–2005
    • University of California, Santa Barbara
      • Department of Electrical and Computer Engineering
      Santa Barbara, CA, United States
  • 1999–2001
    • University of Massachusetts Amherst
      • Department of Electrical and Computer Engineering
      Amherst Center, Massachusetts, United States
    • HRL Laboratories, LLC
      Malibu, California, United States