Gábor Magda

Budapest University of Technology and Economics, Budapeŝto, Budapest, Hungary

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Publications (2)7.39 Total impact

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    ABSTRACT: Graphene has gripped the scientific community ever since its discovery in 2004, with very promising electronic properties and hopes to integrate graphene into nanoelectronic devices. For graphene to make its way into electronic devices, two major obstacles have to be overcome: reproducible preparation of large area graphene samples and patterning techniques to obtain functional components. In this paper we present a graphene etching technique, which is crystallographic orientation selective and allows for the patterning of graphene layers using a chemical reduction process. The process involves the reduction of the SiO2 support by the carbon in the graphene itself. This reaction only occurs at the sample edges and does not result in the degradation of the graphene crystal lattice itself. However, we have observed evidence of strong hole doping in our etched samples.This etching technique opens up new possibilities in graphene patterning and modification. (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
    physica status solidi (c) 03/2010; 7(3‐4):1241 - 1245.
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    ABSTRACT: Graphene has many advantageous properties, but its lack of an electronic band gap makes this two-dimensional material impractical for many nanoelectronic applications, for example, field-effect transistors. This problem can be circumvented by opening up a confinement-induced gap, through the patterning of graphene into ribbons having widths of a few nanometres. The electronic properties of such ribbons depend on both their size and the crystallographic orientation of the ribbon edges. Therefore, etching processes that are able to differentiate between the zigzag and armchair type edge terminations of graphene are highly sought after. In this contribution we show that such an anisotropic, dry etching reaction is possible and we use it to obtain graphene ribbons with zigzag edges. We demonstrate that the starting positions for the carbon removal reaction can be tailored at will with precision. KeywordsGraphene-atomic force microscopy (AFM)-etching-nanoribbon-zigzag
    Nano Research 12/2009; 3(2):110-116. · 7.39 Impact Factor