RenXu Jia

Publications (2)1.02 Total impact

• Source

  Available from: xidian.edu.cn

  Article: Performance investigations of novel dual-material gate (DMG) MOSFET with dielectric pockets (DP)

  SuZhen Luan, HongXia Liu, RenXu Jia
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  ABSTRACT: Dual-material gate MOSFET with dielectric pockets (DMGDP MOSFET) is proposed to eliminate the potential weakness of the DP MOSFET for CMOS scaling toward the 32 nm gate length and beyond. The short-channel effects (SCE) can be effectively suppressed by the insulator near the source/drain regions. And the suppression capability can be even better than the DP MOSFET due to the drain bias absorbed by the screen gate. The speed performance and electronic characteristics of the DMGDP MOSFET are comprehensively studied. Compared to the experimental data from Jurczak et al., the DMGDP PMOSFET exhibits good subthreshold characteristics and the on-state current is almost the twice that of the DP PMOSFET. The intrinsic delay of the NMOS reaches 21% greater than the DP MOSFET for 32 nm node. The higher f T of 390 GHz is achieved, which is a 32% enhancement in comparison with the DP MOSFET when the gate length is 50 nm. Finally, the design guideline and the optimal regions of the DMGDP MOSFET are discussed.
  Science in China Series E Technological Sciences 04/2012; 52(8):2400-2405. · 1.02 Impact Factor
• Article: Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

  Suzhen Luan, Hongxia Liu, Renxu Jia, Jin Wang
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  ABSTRACT: A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) silicon-on- insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation. Together with the conventional drift-diffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried out using the 2D device simulator ISE. Excellent agreement is obtained between the calculations and the simulated results of the model.
  Frontiers of Electrical and Electronic Engineering in China 02/2009; 4(1):98-103.