JunWei Fu

University of Electronic Science and Technology of China, Chengdu, Sichuan Sheng, China

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Publications (2)1.39 Total impact

  • MaoYang Wu · Wei Li · YiJiao Qiu · JunWei Fu · YaDong Jiang ·
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    ABSTRACT: Hydrogen bonding configurations and hydrogen content in hydrogenated amorphous silicon (a-Si:H) thin films prepared at different precursor gas temperatures with undiluted silane have been investigated by means of Fourier transform infrared (FTIR) spectroscopy. The results show that the gas temperature before precursor gases entering the glow-discharge zone remarkably influences the hydrogen bonding configurations and the hydrogen content in a-Si:H thin films. The hydrogen content decreases from 18% down to 11% when increasing the gas temperature from room temperature (RT) to 433 K. Meanwhile, the clustered hydrogen at the physical film surface or at the internal surfaces of the microvoids decreases, indicating that a-Si:H thin films are densified at higher precursor gas temperatures. For a-Si:H thin films deposited at gas temperature of 433 K, the isolated silicon-hydrogen bonding configuration is predominant in the testing films. Keywordsa-Si:H thin film–gas temperature–hydrogen bonding–FTIR–PECVD
    Science China Technological Sciences 09/2011; 54(9):2310-2314. DOI:10.1007/s11431-011-4426-9 · 1.19 Impact Factor
  • Yijiao Qiu · Wei Li · Maoyang Wu · Junwei Fu · Yadong Jiang ·
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    ABSTRACT: Hydrogenated amorphous silicon (a-Si:H) thin films doped with Phosphorus (P) and Nitrogen (N) were deposited by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical band gaps of the thin films obtained through either changing the gas pressure (P-doped only) or adulterating nitrogen concentration (with fixed P content) were investigated by means of Ellipsometric and Ultraviolet-Visible (UV-Vis) spectroscopy, respectively. Tauc formula was used in calculating the optical band gaps of the thin films in both methods. The results show that Ellipsometry and UV-Vis spectrophotometry can be applied in the research of the optical properties of a-Si:H thin films experimentally. Both methods reflect the variation law of the optical band gaps caused by CVD process parameters, i.e., the optical band gap of the a-Si:H thin films is increased with the rise of the gas pressure or the nitrogen concentration respectively. The difference in optical band gaps of the doped a-Si:H thin films calculated by Ellipsometry or UV-Vis spectrophotometry are not so great that they both can be used to measure the optical band gaps of the thin films in practical applications.
    Proceedings of SPIE - The International Society for Optical Engineering 05/2010; 7658:193-. DOI:10.1117/12.866177 · 0.20 Impact Factor

Publication Stats

1 Citation
1.39 Total Impact Points


  • 2010-2011
    • University of Electronic Science and Technology of China
      • • School of Optoelectronic Information
      • • State Key Laboratory of Electronic Thin Films and Integrated Devices
      Chengdu, Sichuan Sheng, China