Valentin A Mishchenko

Troitsk Institute for Innovation and Fusion Research (TRINITI), Troitsk, Omsk, Russia

Are you Valentin A Mishchenko?

Claim your profile

Publications (5)5.99 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: Characteristics of a discharge-produced plasma (DPP) light source in the spectral band 13.5{+-}0.135 nm, developed for Extreme Ultra Violet (EUV) lithography, are presented. EUV light is generated by DPP in tin vapour formed between rotating disk electrodes. The discharge is ignited by a focused laser beam. The EUV power 1000 W/(2 sr) in the spectral band 13.5{+-}0.135 nm was achieved with input power about of 63 kW to the plasma at a pulse repetition rate 7 kHz . The results of numerical simulation are compared with the experimental data. (interaction of laser radiation with matter. laser plasma)
    Quantum Electronics 10/2010; 40(8):720-726. DOI:10.1070/QE2010V040N08ABEH014369 · 0.89 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: Results are presented from experimental studies of repetitively pulsed EUV ({lambda} = 13.5 {+-} 0.135 nm) sources based on a laser-initiated discharge in tin vapor between rotating disk electrodes. Radiative characteristics of two sources with different systems of tin supply onto the electrode surface and different types of power supply have been compared. A number of new effects have been revealed at pulse repetition rates as high as {approx}4000 Hz. A mean radiation power of 520 W into the 2{pi} solid angle has been achieved in the spectral band 13.5 {+-} 0.135 nm at a deposited electrical power of 24 kW.
    Plasma Physics Reports 03/2010; 36(3). DOI:10.1134/S1063780X10030037 · 0.75 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: The development of high-power discharge sources emitting in the 13.5±0.135-nm spectral band is of current interest because they are promising for applications in industrial EUV (extreme ultraviolet) lithography for manufacturing integrated circuits according to technological precision standards of 22 nm and smaller. The parameters of EUV sources based on a laser-induced discharge in tin vapours between rotating disc electrodes are investigated. The properties of the discharge initiation by laser radiation at different wavelengths are established and the laser pulse parameters providing the maximum energy characteristics of the EUV source are determined. The EUV source developed in the study emits an average power of 276 W in the 13.5±0.135-nm spectral band on conversion to the solid angle 2π sr in the stationary regime at a pulse repetition rate of 3000 Hz.
    Quantum Electronics 12/2009; 39(10):967. DOI:10.1070/QE2009v039n10ABEH014028 · 0.89 Impact Factor
  • Source
    [Show abstract] [Hide abstract]
    ABSTRACT: This paper reports the basic results that have been obtained at the SRC RF TRINITI (the former Branch of the Kurchatov Institute of Atomic Energy). The work deals with the development of high power discharge produced plasma EUV sources that can meet the requirements of high volume manufacturing lithography tools. Solving the problem of extremely high thermal loads on the electrodes of a EUV source by moving away the electrode surfaces from the plasma and using both multi-discharge systems and rotating Sn-covered disc electrodes is discussed.
    Journal of Physics D Applied Physics 11/2004; 37(23):3254. DOI:10.1088/0022-3727/37/23/006 · 2.72 Impact Factor
  • [Show abstract] [Hide abstract]
    ABSTRACT: The results from studies aimed at creating a high-power high-repetition-rate gas-discharge EUV source based on xenon Z-pinch are presented. In a liquid-cooled EUV source prototype, an average output power of 10 W for the burst mode (∼1 s) and 5 W for continuous operation, emitted into a solid angle of 0.25 sr and 2% bandwidth around 13.5 nm is attained at a repetition rate of ∼1 kHz. Operating wavelength of the source corresponds to XeXI 13.5-nm ion emission band. It is experimentally shown that the size of the emitting hot plasma can be decreased to ∼2 mm without loss in the average output power. The radiation characteristics were determined by using standard techniques and calibrated metrology tools, which allowed a comparison of the absolute values of the measured parameters with the available data on other EUV sources developed for the next-generation lithography with a resolution of ∼50 nm. The attained level of an average EUV power of 10 W at λ=13.5 nm into the 0.25-sr solid angle and 2% bandwidth is one of the highest at the moment.
    Plasma Physics Reports 01/2002; 28(10):877-881. DOI:10.1134/1.1513842 · 0.75 Impact Factor