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Publications (12)14.25 Total impact

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    ABSTRACT: We report results obtained using an innovative approach for the fabrication of bifacial low-concentrator thin Ag-free n-type Cz-Si (Czochralski silicon) solar cells based on an indium tin oxide/(p+nn+)Cz-Si/indium fluorine oxide structure. The (p+nn+)Cz-Si structure was produced by boron and phosphorus diffusion from B- and P-containing glasses deposited on the opposite sides of n-type Cz-Si wafers, followed by an etch-back step. Transparent conducting oxide (TCO) films, acting as antireflection electrodes, were deposited by ultrasonic spray pyrolysis on both sides. A copper wire contact pattern was attached by low-temperature (160°C) lamination simultaneously to the front and rear transparent conducting oxide layers as well as to the interconnecting ribbons located outside the structure. The shadowing from the contacts was ~4%. The resulting solar cells, 25 × 25 mm2 in dimensions, showed front/rear efficiencies of 17.6–17.9%/16.7–17.0%, respectively, at one to three suns (bifaciality of ~95%). Even at one-sun front illumination and 20–50% one-sun rear illumination, such a cell will generate energy approaching that produced by a monofacial solar cell of 21–26% efficiency. Copyright © 2014 John Wiley & Sons, Ltd.
    Progress in Photovoltaics Research and Applications 01/2014; · 7.71 Impact Factor
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    ABSTRACT: Results obtained in frame of an innovative approach for fabrication of the bifacial low concentrator Ag free Cz silicon solar cells based on Indium-Tin-Oxide(ITO)/(p+nn+)Cz-Si/Indium-Fluorine-Oxide (IFO) structure (n-type cell) as well as on IFO/(n+pp+)Cz-Si/ITO structure (p-type cell) are presented in this work. The (p+nn+)Cz-Si and (n+pp+)Cz-Si structures were produced by diffusion of boron and phosphorus from deposited B- and P-containing glasses followed by an etch-back step. The n+ surface of the structures was textured, whereas the p+ surface remained planar. Transparent conducting oxide (TCO) films, which act as passivating and antireflection electrodes, were deposited by ultrasonic spray pyrolysis method on both sides. The contact pattern of copper wire was attached by the low-temperature (160 °C) lamination method simultaneously to the front and rear TCO layers as well as to the interconnecting ribbons arranged outside the structure. The shadowing from the contacts is in the range of ~4%. The resulting solar cells showed front/rear efficiencies of 18.6-19.0%/14.9-15.3% (p-type cell) and 17.5-17.9%/16.5-17.0% (n-type cell) respectively at 1-5 suns. Even for 1 sun illumination at 20-50% albedo, similar energy production corresponds to 21.6-26.1% (p-type cell) and 20.8-25.8% (n-type cell) efficiency of a monofacial cell.
    09/2013;
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    ABSTRACT: Results obtained for the bifacial low concentrator Ag free Cz silicon solar cells based on Indium–Tin–Oxide(ITO)/(p+nn+)Cz–Si/Indium–Fluorine–Oxide (IFO) structure (“n-type” cell) as well as on IFO/(n+pp+)Cz–Si/ITO structure (“p-type” cell) are presented in this work. The (p+nn+)Cz–Si and (n+pp+)Cz–Si structures were produced by diffusion of boron and phosphorus from deposited B- and P-containing glasses followed by an etch-back step. The n+ surface of the structures was textured, whereas the p+ surface remained planar. Transparent Conducting Oxide (TCO) films, which act as antireflection electrodes, were deposited by ultrasonic spray pyrolysis method on both sides. The contact pattern of copper wire was attached by the low-temperature (160 °C) lamination method simultaneously to the front and rear TCO layers as well as to the interconnecting ribbons arranged outside the structure. The shadowing from the contacts is in the range of ∼4%. The resulting solar cells showed front/rear efficiencies of 18.6–19.0%/14.9–15.3% (“p-type” cell) and 17.3–17.7%/18.1–18.5% (“n-type” cell) respectively at 1–5 suns. At 20–50% albedo of 1-sun illumination, similar energy production corresponds to 21.6–26.8% (n-type cell) and 21.6–26.1% (“p-type” cell) efficiency of a monofacial cell.
    Solar Energy 01/2013; · 3.54 Impact Factor
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    ABSTRACT: For the first time, solar cells of laminated grid cell (LGCell) design are fabricated on multicrystalline nontextured silicon (mc-Si). An efficiency of 15.9% is achieved. The effect of (n + pp +)-mc-Si structure treatment by atomic hydrogen generated by a hot filament and microwave plasma is studied. Hydrogenation improves the parameters describing the dependence of the open-circuit voltage on the radiation intensity and the long-wavelength (λ = 1000 nm) sensitivity of the solar cell by 10–20%, which indicates that defects in mc-Si are passivated. Hydrogenation of the emitter side results in an increase in the series resistance of the solar cell, a decrease in the short-wavelength (λ = 400 nm) sensitivity by 30–35%, and the appearance of an oxygen peak in the energy-dispersive spectra (EDS). These effects are eliminated by fine etching of the emitter.
    Semiconductors 01/2011; 45(3):369-375. · 0.60 Impact Factor
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    ABSTRACT: In2O3:F (IFO) films were deposited onto crystalline silicon and glass by the pyrosol method. The effect of temperature and oxygen in the course of deposition and also of subsequent annealings in various media on the photovoltaic properties of the IFO/Si structure was measured. It is found that IFO forms a rectifying contact to p-Si, makes it possible to obtain a high photovoltage U p = 586 mV and an internal quantum yield higher than 97% for the IFO/(pp +)Si structure, and features a low (0.3–0.4 Ω cm) resistivity. An increase in U p is stimulated by an increase in the temperature of the IFO deposition, a low content of oxygen in the carrier gas, and annealing in argon with methanol vapors. It is concluded that oxygen profoundly affects the surface of the IFO grains and that the transition layer greatly affects the photovoltaic properties of the IFO/(pp +)Si structures.
    Semiconductors 01/2008; 42(4):406-413. · 0.60 Impact Factor
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    ABSTRACT: Results regarding bifacial silicon solar cells with external busbars are presented. The cells consist of [n + p(n)p +] Cz-Si structures with a current-collecting system of new design: a laminated grid of wire external busbars (LGWEB). A LGWEB consists of a transparent conducting oxide film deposited onto a Si structure, busbars adjacent to the Si structure, and a contact wire grid attached simultaneously to the oxide and busbars using the low-temperature lamination method. Bifacial LGWEB solar cells demonstrate record high efficiency for similar devices: 17.7%(n-Si)/17.3%(p-Si) with 74–82% bifaciality for the smooth back surface and 16.3%(n-Si)/16.4%(p-Si) with 89% bifaciality for the textured back surface. It is shown that the LGWEB technology can provide an efficiency exceeding 21%.
    Semiconductors 10/2005; 39(11):1346-1351. · 0.60 Impact Factor
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    ABSTRACT: (For abstract see issue 03, p. 420, Accession no. A80-14593)
    Applied Solar Energy. 01/1979;
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    ABSTRACT: The paper examines the photoelectric properties of single-crystal silicon high-voltage solar cells with bulk arrangement of p-n junctions, obtained through gradient zone recrystallization. The temperature dependence of the basic properties of such cells was studied in the 100-400-K range, and volt-ampere characteristics at high illumination intensities were examined.
    01/1979;
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    ABSTRACT: (For abstract see issue 15, p. 2762, Accession no. A78-37943) Bibtex entry for this abstract Preferred format for this abstract (see Preferences) Find Similar Abstracts: Use: Authors Title Keywords (in text query field) Abstract Text Return: Query Results Return items starting with number Query Form Database: Astronomy Physics arXiv e-prints
    Applied Solar Energy. 01/1978;
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    ABSTRACT: Multijunction solar cells with vertical p-n junctions have been fabricated by depositing p(+)-type vertical zones doped with aluminum and aluminum-boron alloy on n-type plates of silicon. The photoelectric properties of the vertical p-n junctions have been experimentally evaluated by determining the I-V characteristics of the solar cell. The spectral characteristic of the cell, indicating sensitivity gain in the 900-1050 nm range compared with horizontal-junction cells, is obtained. Bibtex entry for this abstract Preferred format for this abstract (see Preferences) Find Similar Abstracts: Use: Authors Title Keywords (in text query field) Abstract Text Return: Query Results Return items starting with number Query Form Database: Astronomy Physics arXiv e-prints
    01/1978;
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    ABSTRACT: The effect of the deposition temperature of AlOx in the range 330–530°C by spray pyrolysis on the rear-surface parameters of silicon (n +pp +)Cz-Si/AlOx solar cells has been studied. It is found that, as the temperature of AlOx deposition is increased, all parameters of the rear surfaces decrease; e.g., the photocurrent density decreases from 25.4 to 24.1 mA/cm2; the photovoltage decreases from 611 to 598 mV; and the efficiency decreases from 12.2 to 10.9%. This indicates that passivation of the p +-type surface with AlOx films becomes less effective. It is concluded that, as the temperature of AlOx deposition is increased, the value of the positive charge incorporated into the nonstoichiometric interphase SiOx layer formed between c-Si and AlOx in the course of AlOx deposition, which brings about screening of the negative charge localized at the AlOx-SiOx interface and, respectively, a decrease in the field-induced passivation, increases.
    Semiconductors 46(6). · 0.60 Impact Factor
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    ABSTRACT: Various approaches have been developed for reducing the cost of the photoelectricity produced by silicon solar cells (SCs). Of highest priority among these approaches are improvement of the efficiency of the SCs, transition from p-Si to n-Si, light concentration, and use of bifacial SCs. In the present study, an SC combining all these approaches has been developed. In this SC, transparent conducting oxides serve as antireflection and passivating electrodes in an indium-tin-oxide/(p +nn +)-Si/indium-fluorine-oxide structure fabricated from Cz-Si with wire contacts (Laminated Grid Cell design). The SC has front/rear efficiencies of 16.5–16.7/15.1–15.3% X (under 1–3 suns). This result is unique because the combination of bifaciality and concentrator operation has no analogs and the SC compares well with the world standard among both bifacial and concentrator SCs.
    Semiconductors 46(9). · 0.60 Impact Factor