ABSTRACT: We studied the impact of the thickness of GaN buffer layer on the properties of distributed Bragg reflector (DBR) grown by
metalorganic chemical vapor deposition (MOCVD). The samples were characterized by using metallographic microscope, transmission
electron microscope (TEM), atomic force microscopy (AFM), X-ray diffractometer (XRD) and spectrophotometer. The results show
that the thickness of the GaN buffer layer can significantly affect the properties of the DBR structure and there is an optimal
thickness of the GaN buffer layer. This work would be helpful for the growth of high quality DBR structures.
Science China Technological Sciences 04/2012; 53(2):313-316. · 0.75 Impact Factor