Paul R. Besser,
Ehrenfried Zschech,
Werner Blum,
Delrose Winter,
Richard Ortega,
Stewart Rose,
Matt Herrick,
Martin Gall,
Stacye Thrasher,
Mike Tiner,
Brett Baker,
Greg Braeckelmann,
Larry Zhao, Cindy Simpson,
Cristiano Capasso,
Hisao Kawasaki,
Elizabeth Weitzman
[show abstract]
[hide abstract]
ABSTRACT: The microstructure of inlaid Cu lines has been quantified as a function of annealing conditions, post-plating, and post-CMP.
The grain size distribution was measured using the median intercept method, crystallographic texture was characterized by
pole figure analysis, and mechanical stress was determined using x-ray diffraction. The median grain size and mechanical stress
level increase with increasing anneal temperature. The crystallographic texture is independent of the anneal temperature and
is predominantly (111) with a small fraction of sidewall-nucleated (111) grains. The (111) grains nucleated from the trench
bottom have a preferred in-plane orientation. The grain growth in the trench is independent of that in the overburden.
Journal of Electronic Materials 03/2001; 30(4):320-330. · 1.47 Impact Factor
