Beata Ściana

Publications (1)0.91 Total impact

• Article: Simulations of AlGaAs/GaAs heterojunction phototransistors

  Beata Ściana, Marek Panek, Artur Borczuch, Marek Tłaczała
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  ABSTRACT: Heterojunction bipolar phototransistors, based on GaAs technology, are widely used in optoelectronic integrated circuits. One of the methods to improve phototransistor performance is applying a delta-doped thin base, which causes both a higher current gain and a better time response. There is a lack of information about this kind of device in the literature. Our work presents the results of computer simulations of AlGaAs/GaAs n-p-n phototransistors, with a bulk-doped and delta-doped base working as two- and threeterminal devices. The characteristics and device parameters obtained clearly show that phototransistors with delta-doped base have higher sensitivity and a better time response compared to the structures with a bulk-doped base. Based on simulation results, we modified the epitaxial phototransistor structure with a double delta-doped base that should improve device performance. Keywordsphototransistor–AlGaAs/GaAs heterostructure–delta-doping–spectral characteristics–response time
  Central European Journal of Physics 04/2012; 9(4):1114-1121. · 0.91 Impact Factor