E. Estacio,
S. Takatori,
M. H. Pham,
T. Yoshioka,
T. Nakazato,
M. Cadatal-Raduban,
T. Shimizu,
N. Sarukura,
M. Hangyo,
C. T. Que,
M. Tani,
T. Edamura, M. Nakajima,
J. V. Misa,
R. Jaculbia,
A. Somintac,
A. Salvador
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ABSTRACT: Intense terahertz radiation was generated from femtosecond laser-irradiated InAs and GaAs layers on Si substrates. Results
show that InAs/Si and GaAs/Si films can be excited in reflection and transmission geometries. The InAs/Si film exhibited weaker
emission for both excitation cases but it will be more feasible as a spectroscopic THz source due to the absence of complex
spectral features in its emission spectrum. The GaAs/Si emission is characterized by Fabry–Perot oscillations but it is 90%
of that of p-InAs bulk crystal emission intensity in the reflection geometry. Excitation fluence measurements showed that
the InAs/Si film saturates easily due to the laser’s shallow penetration depth in InAs.
Applied Physics B 04/2012; 103(4):825-829. · 2.19 Impact Factor
