Boris Z. Olshanetsky

Publications (2)1.82 Total impact

• Article: Ge diffusion on Si surfaces

  Andrey E. Dolbak, Boris Z. Olshanetsky
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  ABSTRACT: Ge diffusion on Si(100), (111), and (110) surfaces has been studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 600 to 800 °C. Surface diffusion coefficients versus temperature have been measured.
  Central European Journal of Physics 01/2006; 4(3):310-317. · 0.91 Impact Factor
• Source

  Available from: Ruslan Zhachuk

  Article: Surface diffusion of Pb on clean Si surfaces

  Andrey E. Dolbak, Ruslan A. Zhachuk, Boris Z. Olshanetsky
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  ABSTRACT: Pb diffusion on clean Si(111), (100), and (110) surfaces was studied by Auger electron spectroscopy and low energy electron diffraction in the temperature range from 100 to 300°C. It is shown that lead transport along sillicon surfaces takes place via the mechanism of solid-phase spreading with a sharp moving boundary. The temperature dependence of the Pb diffusion coefficients on Si(111), (100) and (110) surfaces have been obtained. A Si(110)-4×2-Pb surface structure has been observed for the first time.
  Central European Journal of Physics 05/2004; 2(2):254-265. · 0.91 Impact Factor