[Show abstract][Hide abstract] ABSTRACT: In the work the results of experimental researches of geometric and mechanical parameters
of vertically aligned carbon nanotubes (VACNT) by atomic force microscopy (AFM) and
nanoindentation are presented. Here is also shown the influence of diameter and length of the carbon
nanotube on the value of bending stiffness and Young's modulus of nanotubes. The analysis of the
experimental researches shows that the magnitude of bending stiffness significantly increases with
the increasing of the diameter of the nanotubes and decreases with increasing length of the CNT.
Diameter and length of the carbon nanotubes also have the most significant influence on Young's
modulus of CNTs. The obtained results can be used to develop the processes of formation of microand
nanoelectronic elements based on the VACNT.
[Show abstract][Hide abstract] ABSTRACT: The results of experimental studies of the resolving power and accuracy of nanosized profiling using focused ion beams (FIBs) are presented. Dependences of the resolving power on the ion beam current were obtained for the boron-doped (10 ohm cm (100)) silicon substrate during FIB etching. It has been established that the best resolution upon silicon etching determined by the average thickness of the etched line is 15–52 nm and corresponds to ion beam currents of 1–30 nA. It has been shown that the precision in the formation of a topological pattern on the substrate surface increases with the decreasing magnitude of the ion beam current in the range of 0.5 pA to 1 nA, and the relative error in the formation of the nanostructure decreases from 5.10 to 0.07. The results of our research can be used to develop manufacturing processes when creating submicron structures and elements of nanoelectronics and nanosystem technology by using FIB.
[Show abstract][Hide abstract] ABSTRACT: This paper presents the results of a mathematical model developed for calculating two-dimensional topography of the substrate surface when etching by a focused ion beam (FIB). A simulation of the two-dimensional relief of the substrate when irradiated by the FIB was carried out. An algorithm and software were developed making it possible to forecast the parameters of the surface relief depending on the characteristics of the ion beam and scanning system. The algorithm takes into account the redeposition of the sputtered material. The adequacy of the model is confirmed by a comparison with the results of experimental investigations.
[Show abstract][Hide abstract] ABSTRACT: We report on the results of experimental study of an array of vertically aligned carbon nanotubes (VA CNTs) by scanning tunnel microscopy (STM). It is shown that upon the application of an external electric field to the STM probe/VA CNT system, individual VA CNTs are combined into bundles whose diameter depends on the radius of the tip of the STM probe. The memristor effect in VA CNTs is detected. For the VA CNT array under investigation, the resistivity ratio in the low- and high-resistance states at a voltage of 180 mV is 28. The results can be used in the development of structures and technological processes for designing nanoelectronics devices based on VA CNT arrays, including elements of ultrahigh-access memory cells for vacuum microelectronics devices.
[Show abstract][Hide abstract] ABSTRACT: Experimental results on the conditions of activation of probe nanolithography of a thin titanium film by means of local anodic oxidation are reported. It is established that ultraviolet stimulation reduces the geometric dimensions of nanometric oxide structures. The stimulation is accompanied by an increase in the amplitude and duration of the threshold voltage pulse, correspondingly, from 6 to 7 V and from 50 to 100 ms at the relative humidity 50%. The experimental data on the effect of the cantilever coating material and substrate temperature on the geometric dimensions of nanometric oxide structures are reported.
[Show abstract][Hide abstract] ABSTRACT: Azomethine complexes of copper, nickel, cobalt, and zinc are demonstrated to favor selective transfer in the medium of polyorganosiloxanes.
In studies of the friction surfaces with the use of methods of optical and scanning electron microscopy, energy-dispersion
electron probe X-ray microanalysis, and infrared frustrated total internal reflection spectroscopy, the formation of a transition-metal
and tribopolymer film containing polyorganosiloxane fragments is found.
Keywordspolyorganosiloxanes-additives-coordination compounds-azomethines-esters-tribochemical reactions-friction polymers
Journal of Friction and Wear 01/2010; 31(5):387-397. · 0.36 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: Oil-soluble bis(salicylideneiminates) were prepared chemically (from acetates of 3d-metals) and electrochemically (by anodic dissolution of complex forming agents) from o-hydroxybenzylideneimines of higher aliphatic amines. The structure of the ligands and complexes was established by the methods of IR and NMR spectroscopy. Lubricant compositions prepared with the use of the salicylideneiminate-modified hightemperature silicon liquids cause the formation of a tribopolymer metal-containing film. Its investigation by the method of the X-ray spectral analysis proved the presence of carbon, silicon, and nickel in the films.
Russian Journal of General Chemistry 01/2010; 80(5). · 0.43 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: The mechanism of the appearance of tribo-EMF autooscillations in steel-copper-alloy pairs in the case of self-organization
in the wearless and transient friction modes is proposed; the mechanism is based on the assumption of the periodic coagulation
of copper nanoclusters on the friction surface when the servovit film forms. It is shown that the governing parameter of the
self-organization and the cause of tribo-EMF autooscillations in the studied tribosystems is periodic variation of the electrolyte
concentration in the diffusion layer of the metal-cladding lubricating material.
Journal of Friction and Wear 30(4):271-276. · 0.36 Impact Factor
[Show abstract][Hide abstract] ABSTRACT: A technique for determining Young’s modulus of oriented nanowhiskers using atomic force microscopy is developed. Results of studying the effect of geometric parameters on Young’s modulus of oriented gallium arsenide nanowhiskers are presented. Young’s modulus value has been found experimentally for the GaAs nanowhiskers, which varied from 9 to 143 GPa depending on their aspect ratio. It is shown that Young’s modulus of the GaAs nanowhiskers depends on their aspect ratio and can exceed Young’s modulus of the bulk GaAs. The results can be used in the development of technological processes for forming structures of the nano- and microsystem hardware and the nano- and microelectronics based on oriented nanowhiskers, in particular arsenide gallium nanowhiskers, as well as in the development of techniques for the nanodiagnostics of filamentary structures.
[Show abstract][Hide abstract] ABSTRACT: The paper presents the results of experimental investigations into probe modification for atomic-force microscopy (AFM) and scanning tunneling microscopy (STM) by etching the point of AFM cantilevers and tungsten STM probes by applying the method of focused ion beams (FIBs). It is shown that the use of etching by the IB method allows one to obtain the probes with rounding that is less than 10 nm and with an aspect ratio of 1: 50. The application of these probes increases the resolution and the reliability of measuring by the AFM and STM methods. The obtained results can be used for developing the technological processes of production and modification of sensor probes for AFM and STM, as well as the methods for diagnostics of the structures of microelectronics, nanoelectronics and the microsystem and nanosystem technologies.
[Show abstract][Hide abstract] ABSTRACT: Results obtained in a study of the influence exerted by the technological modes of local anodic oxidation (LAO) on the process in which nanosized oxide structures (NOSs) are formed on the surface of gallium arsenide are reported. The effect of the amplitude and duration of voltage pulses applied to the probesubstrate system, relative air humidity in the technological chamber, and amplitude of cantilever oscillations on the geometric parameters of gallium arsenide NOSs has been examined. It was found that raising the relative humidity from 60 to 90% results in a decrease in the threshold LAO voltage from 7.0 to 6.0 V. It is shown that raising the oscillation amplitude from 0.1 to 2.8 nm leads to a decrease in the NOS height from 3.20 ± 0.34 to 1.10 ± 0.13 nm and in the NOS diameter from 218.4 ± 29.5 to 78.1 ± 10.3 nm.
[Show abstract][Hide abstract] ABSTRACT: The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.
[Show abstract][Hide abstract] ABSTRACT: A technique for determining Young’s modulus of vertically aligned carbon nanotubes using the refined micromechanical model of the nanoindentation of a forest of vertically aligned carbon nanotubes is developed. The results of experimental studies of Young’s modulus determination for vertically aligned carbon nanotubes with different geometrical parameters are given. It is shown that, for a forest of carbon nanotubes with an effective diameter of around 100 nm and an effective length of approximately 2 μm, as well as for a forest with an effective diameter of carbon nanotubes of roughly 52 nm and their effective length of nearly 500 nm, the values of Young’s modulus are 1.68 ± 0.08 and 1.01 ± 0.05 TPa, respectively. Our results can be used for developing the technological processes of the formation of structures for nano- and microelectronics and nano- and microsystem technology on the basis of vertically aligned carbon nanotubes.