ABSTRACT: Mn ions have been incorporated into MOCVD grown Al1−x
N/GaN thin films by ion implantation to achieve the room temperature ferromagnetism in the samples. Magnetic characterizations
revealed the presence of two ferromagnetic transitions: one has Curie points at ∼260K and the other above room temperature.
In-diffusion of indium caused by the Mn implantation leads to the partition of AlInN epilayer into two diluted magnetic semiconductor
sub-layers depending on the Mn concentration. The Curie temperature of 260K is assigned to the layer having lower concentration,
above room temperature is assumed to be associated to the layer having higher Mn concentration.
Applied Physics A 04/2012; 96(4):979-984. · 1.63 Impact Factor
ABSTRACT: Neon ions were implanted into MOCVD grown wurtzite AlInN/GaN hetrostructures with dose ranging from 1014 to 9×1015ions/cm2. Structural characterization was carried out by X-ray diffraction and the dose dependence of strain was monitored before
and after annealing. An increase in strain was observed in low dose regime until it saturates at a dose of 5×1015cm−2 and decreased with further increase in dose. Strain accumulation is attributed to the clustering of individual defects whereas
decrease in level of strain is due to the capturing of defects by fixed sinks.
Journal of Materials Science Materials in Electronics 01/2009; 20(3):230-233. · 1.08 Impact Factor
Japanese Journal of Applied Physics 01/2009; 48:040202. · 1.06 Impact Factor
Physica B Condensed Matter 01/2008; 403:2495. · 1.06 Impact Factor
ABSTRACT: AlInN/GaN thin films were implanted with Mn ions and subsequently annealed isochronically at 750 and 850 $^circ$C. X-ray diffraction and Rutherford backscattering spectroscopy (RBS) techniques were employed to study the microstructural properties of the implanted/annealed samples. The effect of annealing on implantation-induced strain in thin films has been studied in detail. The strain was found to increase with dose until it reached a saturation value and after that it started decreasing with a further increase in the dose. RBS measurements indicated the atomic diffusion of In, Al, Ga and Mn in implanted samples. The in- and out-diffusion of atoms has been observed after annealing at 750 $^circ$C and 850 $^circ$C, respectively. Strong decomposition of the samples took place when annealed at 850 $^circ$C.
Journal of Physics D: Applied Physics. 41(11):115404.