K. Lal

Bharati Vidyapeeth Deemed University, Poona, Mahārāshtra, India

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Publications (8)9.51 Total impact

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    ABSTRACT: Measurement of electrical resistivity in the temperature range 1.5 less than or equal to T less than or equal to 300 K of tantalum nitride films prepared by Ion Beam Assisted deposition and pure tantalum films prepared by electron beam evaporation has been carried out. The tantalum film shows a resistivity minimum at T-m = 12 K, whereas tantalum nitride shows a decrease in resistivity with an increase in temperature. An attempt has been made to explain such anomalous behavior by using existing theories.
    Solid State Communications 08/2004; 131(7):479-484. DOI:10.1016/j.ssc.2004.05.003 · 1.70 Impact Factor
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    ABSTRACT: The frequency dependent conductivity of different thin AlN films measured in the frequency range 10 Hz to 2 MHz for temperature between 300 and 573 K is reported. It is observed from the experimental data that the AC conductivity in the AlN thin films is proportional to ωs. The value of s is found to be temperature dependent, which shows a decreasing trend with temperature. The correlated barrier hopping model is the most likely mechanism for the electron transport. The polaron binding energy (Wm), the height of Coulomb barrier (W), and the characteristic relaxation time (τ0) have been calculated.
    Thin Solid Films 06/2003; 434(1):264-270. DOI:10.1016/S0040-6090(03)00536-4 · 1.87 Impact Factor
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    ABSTRACT: AC conductivity of different thin zinc oxide films measured in the frequency range of 10 Hz to 2 MHz in the temperature interval of 300 K to 575 K is reported. ZnO films were prepared by reactive r.f. magnetron sputtering from ZnO target. The experimental data reveal that a.c. conductivity is proportional to s . The value of s was found to be temperature dependent, decreases with increasing temperature. These observations suggest that correlated barrier hopping model is the most likely mechanism. The temperature dependence of a.c. Conductivity is expressed in power law form as () T n . The temperature exponent n is found to be increasing with increasing temperature and decreasing frequency in accordance with the narrow band limit. At high temperature the conductivity variation with frequency is comparatively small. The polaron binding energy (W m), the height of Coulomb barrier (W) and the characteristic relaxation time (tau0) have been calculated. The values of W m and W increase as the thickness decreases whereas the values of tau0 decrease with decreasing thickness.
    Czechoslovak Journal of Physics 03/2003; 53(3):263-270. DOI:10.1023/A:1022981115812 · 0.42 Impact Factor
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    ABSTRACT: We report the electrical resistivity of titanium nitride thin films prepared by ion beam-assisted deposition technique in the temperature range 77⩽T⩽300K. The residual resistivity (ρ0) of the films decreases by increasing nitrogen partial pressure. The films show the quadratic temperature behavior of resistivity in the investigated temperature range. Attempt has been made to explain such anomalous behavior by using existing theories.
    Physica B Condensed Matter 12/2001; 307(1):150-157. DOI:10.1016/S0921-4526(01)00626-3 · 1.28 Impact Factor
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    ABSTRACT: A detailed study on the weak localization phenomenon vis-a-vis electron-electron interaction effects in magnetic metallic glasses has been carried out. We measured the electrical conductivity and magnetoconductivity within the temperature range 1.8≤T≤300K. A maximum on the conductivity versus temperature curve exists atT=T m. The conductivity was observed to follow aT 1/2 law forT<T m andT 2 law forT>T m. Magnetoconductivity data of these alloys indicate the prominence of electron-electron interaction at low temperatures. The authors have determined the inelastic scattering field and spin-orbit scattering field from the magnetoconductivity data. The inelastic scattering field obeys aT p law (p=2) at low temperatures.
    Czechoslovak Journal of Physics 09/2001; 51(9):897-908. DOI:10.1023/A:1012396725150 · 0.42 Impact Factor
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    ABSTRACT: A detailed study on the weak localization phenomenon vis-a-vis electron-electron interaction effects in magnetic metallic glasses has been carried out. We measured the electrical conductivity and magnetoconductivity within the temperature range 1.8 T 300 K. A maximum on the conductivity versus temperature curve exists at T = T_m. The conductivity was observed to follow a T^1/2 law for T < T_m and T^2 law for T > T_m. Magnetoconductivity data of these alloys indicate the prominence of electron-electron interaction at low temperatures. The authors have determined the inelastic scattering field and spin-orbit scattering field from the magnetoconductivity data. The inelastic scattering field obeys a T^p law (p = 2) at low temperatures.
    Czechoslovak Journal of Physics 08/2001; 51(9):897-908. · 0.42 Impact Factor
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    ABSTRACT: We report the results of a comprehensive study of localization and electron–electron interaction effects in Fe-base metallic glasses. We have measured the electrical conductivity and magnetoconductivity within the temperature range A maximum is observed in the conductivity versus temperature curve at temperature T=Tm. The conductivity obeys a T1/2 law for T Tm. Magnetoconductivity data indicate that the electron–electron interaction is most prominent in these alloys at low temperature. From the magneto-conductivity data we have calculated the inelastic scattering field and spin–orbit scattering field. The inelastic scattering field follows a Tp law (p=2) at low temperature.
    Solid State Communications 02/2000; 113(9):533-538. DOI:10.1016/S0038-1098(99)00526-8 · 1.70 Impact Factor
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    ABSTRACT: Measurement of electrical resistivity in the temperature range K and the magnetic hysteresis loops at room temperature of iron nitride films prepared by ion beam assisted deposition have been carried out. Different phases present in the films are identified by using X-ray diffraction. Though saturation magnetization is very low for the Fe2N films, the other phases of iron nitride such as Fe2.5N, Fe4N and Fe3N etc. show saturation magnetization varying from 3.35×10−2 e.m.u. to 12.3×10−2 e.m.u. The coercivity of the films varies with thickness and obeys the d−4/3 law which may correspond to the formation of Bloch wall. The resistivity of all the films obey the T2 variation in the temperature range K. This may be due to electron–spin wave scattering.
    Solid State Communications 11/1998; 108(12):977-982. DOI:10.1016/S0038-1098(98)00472-4 · 1.70 Impact Factor