M. Pessa

Tampere University of Technology, Tammerfors, Province of Western Finland, Finland

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Publications (506)739.52 Total impact

  • [Show abstract] [Hide abstract]
    ABSTRACT: It was recently found that oxygen induces ordered reconstructions on several III–V surfaces. The most oxygen-rich reconstruction shows (3 × 1) periodicity. Based on first-principles investigations, a detailed atomic model is presented for this reconstruction. The uncommon periodicity is attributed to the highly stable InOIn trilayer below surface which also leads to stabilizing additional bonds within the surface layer. The strain induced by the trilayer is more effectively accommodated within the (3 × 1) reconstruction than within the competing (2 × 1) reconstruction due to smaller number of dimers. It is proposed that the experimentally found semiconductivity is reached by substitutional atoms within the surface layer. Suitable substitution preserves the magnitude of the bulk band gap.
    Surface Science 12/2012; 606(s 23–24):1837–1841. · 1.87 Impact Factor
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    ABSTRACT: The influence of non-radiative recombination on the photoluminescence decay time (τPL) has been studied for GaInNAs/GaAs quantum wells with Ga- and In-rich environments of N atoms. At low temperatures, this influence is suppressed, due to the carrier localization phenomenon, which leads to a spectral dispersion of τPL. For investigated samples, this dispersion has been found to be in the range of ~0.2–2.0 ns. With the temperature increase, the free exciton emission starts to dominate instead of the localized exciton emission and the dispersion of τPL disappears. The dynamic of free exciton recombination is strongly influenced by the non-radiative recombination, which varies between samples, due to different concentration of non-radiative centers. The study of influence of non-radiative recombination on τPL has been performed at 180 K, since this temperature is high enough to eliminate the localized emission and activate non-radiative recombination and low enough to observe excitonic emission without strong contribution of free carrier recombination when the sample is excited with low power. It was observed that, for as-grown samples, the τPL increases from 0.14 to 0.25 ns with the change in As/III beam equivalent pressure ratio from 3.8 to 12.1 (in this case, it corresponds to the change in nitrogen nearest-neighbor environment from Ga- to In-rich), whereas, after annealing (i.e., also the change from Ga-rich to In-rich environment of N atoms), this time increases 2–4 times, depending on the As/III ratio. It has been concluded that the τPL is influenced by point defects rather than the nitrogen nearest-neighbor environment, but their concentration is correlated with the type of nitrogen environment.
    Journal of Applied Physics 03/2012; 111(6). · 2.21 Impact Factor
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    ABSTRACT: Amorphous surface oxides of III–V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1×2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
    Applied Physics Letters 06/2011; 98(23). · 3.52 Impact Factor
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    ABSTRACT: Previously found oxidized III-V semiconductor surfaces have been generally structurally disordered and useless for applications. We disclose a family of well-ordered oxidized InAs, InGaAs, InP, and InSb surfaces found by experiments. The found epitaxial oxide-III-V interface is insulating and free of defects related to the harmful Fermi-level pinning, which opens up new possibilities to develop long-sought III-V metal-oxide-semiconductor transistors. Calculations reveal that the early stages in the oxidation process include only O-III bonds due to the geometry of the III-V(100)c(8×2) substrate, which is responsible for the formation of the ordered interface. The found surfaces provide a different platform to study the oxidation and properties of oxides, e.g., the origins of the photoemission shifts and electronic structures, using surface science methods.
    Physical review. B, Condensed matter 05/2011; 83(19). · 3.66 Impact Factor
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    ABSTRACT: We report a comparative study on selective epitaxy of nanostructures with different geometrical shapes. GaAs pyramids were grown by molecular beam epitaxy into circular holes, L-shaped holes, and cross-shaped holes, patterned using nanoimprint lithography. These GaAs nanostructures were used for guided-self assembly of InAs QDs. The results show that the initial shapes of the nanostructures have a strong effect on the nucleation of InAs QDs. Cross-shaped holes were found to be the most resilient against form changes when the height of the pyramid was increased. On the other hand the L-shaped islands became unusable for QD growths when more than twenty nanometers of GaAs was grown onto the patterns. Photoluminescence measurements on QDs embedded within the GaAs islands showed that the peak emission wavelength was similar for all types of pyramids.
    Journal of Crystal Growth 01/2011; 323(1):201-205. · 1.55 Impact Factor
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    ABSTRACT: Optically pumped semiconductor disk lasers (OP-SDL) combine many advan- tages of traditional solid-state lasers with the versatility offered by the wide range of available semiconductor gain materials. SDLs provide a good quality, nearly diffraction limited, Gaussian shaped beam and the external cavity enables the use of intra-cavity filters for achieving narrow linewidth and wavelength tunability. GaSb-based com- pound semiconductors can be tailored to cover a broad spectral range, extending from 2 μm to beyond 3 μm. They are the prime choice for the development of lasers to be used in spectroscopy of atmospheric gasses, laser surgery, remote sensing, or military countermeasures.(1, 2) In this study we demonstrate a high power continuous wave SDL emitting at 2 μm. The structure consists of 18.5 pairs of GaSb/AlAsSb distributed Bragg reflector and a gain region with 15 InGaSb quantum-wells (QWs) embedded in GaSb. A 2.5×2.5 mm2-size gain chip was capillary bonded with water to a type IIa natural dia- mond heat spreader to enable efficient heat removal from the active region. The bonded chip was finally pressed between two copper plates, with a small hole in the top plate allowing the passage of pump and signal. The mounted sample was attached to a water cooled copper heat sink. The laser cavity had a V-type configuration consisting of the mounted gain chip, a high reflective folding mirror with radius of curvature of 200 mm, and a 2 % transmis- sive planar output coupler. A 980 nm diode laser was used for optical pumping of the gain region and the pump beam was focused to a spot of about 290 μm in diameter at an angle of 22° to the surface normal. The highest output powers, over 4 W, were achieved near room temperatures and lasing with over 1-W power was observed still at 50 °C. The laser could be tuned about 75 nm using a birefringent filter inside the cavity. Wider tuning range was dem- onstrated - more than 150 nm - by utilizing QWs with different thickness in the active region. In addition, short-pulse generation exploiting GaSb-SESAMs for passive mode- locking is presented.
    01/2011;
  • C. Tan, Tapio Niemi, Changsi Peng, Markus Pessa
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    ABSTRACT: We present a new graded-index photonic crystal (GRIN PhC) structure which can be made by laser interference lithography (LIL). It can be applied as miniaturized focusing lens. Numerical simulations are carried out on the structures with different widths, lengths, and modulations. In the qualitative analysis of the focal length, focusing of a GRIN PhC was proved to originate from both the graded sizes of the rods and multimode interference. Multimode interference dominates the focusing effect when a GRIN PhC has a small length or a small difference in the rod sizes. Intensity distributions in different cases were given to support the conclusion.
    Optics Communications 01/2011; 284(12):3140-3143. · 1.44 Impact Factor
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    ABSTRACT: Highly polarized light from an InGaN/GaN light emitting diode is proposed using an embedded multi-layer metallic/dielectric sub-wavelength grating and a dielectric transition layer. Transmission of transverse magnetic mode (TTM), reflection of transverse electric mode, and polarization extinction ratio (ER) were calculated using commercial “GSOLVER” software, based on a full vector implementation of Rigorous Coupled-Wave Analysis algorithm. TTM and ER were found to be largely enhanced by the presence of the transition layer, made of MgF2 or SiO2, placed between GaN and the grating section. TTM>95% and ER>34dB for closely optimized Al/MgF2 gratings were predicted. These values are significantly higher than those obtained by single-layer metallic gratings.
    Thin Solid Films 01/2011; 520(1):419-423. · 1.87 Impact Factor
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    ABSTRACT: The paper presents the modelling and design particularities of laterally-coupled distributed feedback lasers (LC-DFB), the fabrication process, involving a highly productive and cost-effective UV-nanoimprint lithography technique, and the characteristics obtained up to now for the LC-DFB lasers fabricated for pumping Cesium atomic clocks. 550 μm long LC-DFB lasers, emitting at 894 μm, had 10 mA threshold currents and maintained over 40dB side-mode-suppression-ratio between 10 and 100°C. The measured self-homodyne spectrum indicated a linewidth below 1.3 MHz for AR/HR-coated 1000 μm long LC-DFB lasers and the simulations indicate that the use of phase-shift sections could reduce the linewidth below 250 kHz.
    Semiconductor Conference (CAS), 2010 International; 11/2010
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    ABSTRACT: The effect of in‐situ N‐ion irradiation on the recombination dynamics of GaInNAs∕GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump‐probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode‐locked laser setup was studied with a Bi‐doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in‐situ irradiation method for device applications.
    AIP Conference Proceedings. 11/2010; 1288(1):200-203.
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    ABSTRACT: Four-beam laser interference is shown to stimulate the self-organisation of periodic two-dimensional arrays of nanoislands on the surface of GaAs/InGaAs/GaAs epitaxial structures. (Self-organisation is here taken to mean processes that determine the island size.) The island size distribution has two well-defined maxima. The smaller islands (~5 nm) form inside each heat-affected zone, and the larger islands (~15 nm), at the periphery of such zones. The island width is a factor of 20 — 60 smaller than the standing wave period, which can be accounted for in terms of the elastic stress on the surface of the epitaxial film.
    Quantum Electronics 03/2010; 40(1):73. · 0.82 Impact Factor
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    ABSTRACT: We report the use of a mode-locked fiber laser in pulsed laser deposition (PLD) of yttria-stabilized zirconium oxide. The fiber laser produces picosecond pulses with megahertz repetition rates at the wavelength of 1060 nm. We have investigated the effects of the time delay and the physical overlapping of the consecutive pulses on the ablation thresholds and the properties of the deposited films. Our results show existence of two distinct evaporation modes: (1) a single pulse evaporation mode observed for low overlapping and long time delays between the pulses and (2) a high repetition rate evaporation mode for high overlapping with short delays. The first mode is characterized by evaporation of nanoparticles and clusters and yields structured films with high surface area. The second mode yields smooth films, with evaporation characteristics closer to those of thermal evaporation than traditional PLD.
    Applied Physics A 03/2010; 98(3):487. · 1.69 Impact Factor
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    ABSTRACT: We report a GaInNAs/GaAs-based disk laser producing 7 W output power at 1180 nm wavelength at a temperature of 15 °C. The laser generated more than 5 W of output power when it was forced to operate with a narrow spectrum at 1178 nm. The gain mirror was grown using a molecular beam epitaxy reactor and it comprised 10 GaInNAs QWs and a 25.5- pair GaAs/AlAs distributed Bragg reflector.
    Proc SPIE 02/2010;
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    ABSTRACT: We have studied In-stabilized c(8 × 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III–V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the ζ and ζa models, which have been previously established to describe the atomic structures of the III–V(1 0 0)c(8 × 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III–V(1 0 0)c(8 × 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated ζ and ζa SCLS values shows that the InSb spectra are reproduced by the ζ SCLSs better than by the ζa SCLSs. Interestingly, the ζa fits agree better with the InAs spectra than the ζ fits do, indicating that the ζa model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III–V(1 0 0)c(8 × 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges.
    Journal of Electron Spectroscopy and Related Phenomena 01/2010; 177(1):52-57. · 1.71 Impact Factor
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    ABSTRACT: Applied Physics Letters, Article number 021902 Vol.97 Nr.2
    Applied Physics Letters 01/2010; · 3.52 Impact Factor
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    ABSTRACT: By means of scanning tunneling microscopy/spectroscopy (STM/STS), photoelectron spectroscopy, and first-principles calculations, we have studied the bismuth (Bi) adsorbate-stabilized InSb(100) substrate surface which shows a c(2×6) low-energy electron diffraction pattern [thus labeled Bi/InSb(100)c(2×6) surface] and which includes areas with metallic STS curves as well as areas with semiconducting STS curves. The first-principles phase diagram of the Bi/InSb(100) surface demonstrates the presence of the Bi-stabilized metallic c(2×6) reconstruction and semiconducting (4×3) reconstruction depending on the chemical potentials, in good agreement with STS results. The existence of the metallic c(2×6) phase, which does not obey the electron counting model, is attributed to the partial prohibition of the relaxation in the direction perpendicular to dimer rows in the competing reconstructions and the peculiar stability of the Bi-stabilized dimer rows. Based on (i) first-principles phase diagram, (ii) STS results, and (iii) comparison of the measured and calculated STM and photoemission data, we show that the measured Bi/InSb(100)c(2×6) surface includes metallic areas with the stable c(2×6) atomic structure and semiconducting areas with the stable (4×3) atomic structure.
    Physical review. B, Condensed matter 01/2010; 81(3). · 3.66 Impact Factor
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    Lithuanian Journal of Physics - LITH J PHYS. 01/2010; 50(1):27-34.
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    ABSTRACT: Technologically useful indium- (In) terminated c(8×2)-reconstructed GaAs(100) substrate surface has been studied by first-principles calculations and scanning tunneling microscopy (STM) measurements. Our total-energy calculations demonstrate the stability of four different so-called ζa structures with In monomer rows and In coverage between 0.5 and 2 monolayers on the GaAs(100) substrate. Thus, we introduce a surface system, which stabilizes the ζa reconstruction. Furthermore, an interesting trend is found. Atomic structure of the c(8×2) reconstruction depends on the surface-layer cation and substrate volumes, which, in principle, allows to tune the surface structure by cation adsorption. This phenomenon is related to the peculiar c(8×2) atomic surface structure, which shows mixed surface layer, including both anions and cations, and uncommon metallic-type cations in the ζa structure, which do not show covalent bonds. Our results predict a structural transition from the ζ structure to the ζa structure as the surface cation size is increased at 0 K. The found transition is probably related to the disordered surface structures (consisting of ζ and ζa building blocks) found experimentally by x-ray diffraction at room temperature. Comparison of the STM images, calculated for various c(8×2) models, with the former and present measured STM images of In/GaAs(100)c(8×2) supports the presence of stable ζa reconstructions.
    Physical review. B, Condensed matter 01/2010; 81(24). · 3.66 Impact Factor
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    Lithuanian Journal of Physics - LITH J PHYS. 01/2010; 50(1):41-46.
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    ABSTRACT: Nanoperforated membranes can transmit light and modify either the spectral or the spatial properties of the beam passing through the membrane. Alternatively, the perforated membrane can be used as a precisely fabricated filter for nanoparticles, fluids or gases. We made membranes made on a silicon nitride layer deposited on silicon wafer with nanopatterning was realized by nanoimprint lithography. We present two components based on these nanopatterned membranes. Firstly, we demonstrate large-area nanoperforated membranes. The perforations through a 1500nm thick free-standing silicon nitride (SiN) film have a diameter of 350nm and a period of 700nm. The area of the largest free-standing films was 25mm2. Secondly, we demonstrate small area membranous optical elements and a method to couple them to optical fibers. Our component uses an optical element processed on the SiN-membrane on silicon wafer. Light is launched and collected through the fiber glued in the trough-wafer via. This component demonstrates a novel and simple way to couple mass producible optical elements with optical fibers. Finally, we fabricate an optical filter utilizing guided-mode resonance on the SiN-membrane. The filter utilizes fiber coupling, and we demonstrate its use as a refractive index sensor.
    Microelectronic Engineering - MICROELECTRON ENG. 01/2010; 87(5):1620-1622.

Publication Stats

2k Citations
739.52 Total Impact Points

Institutions

  • 1970–2012
    • Tampere University of Technology
      • • Optoelectronics Research Centre
      • • Department of Physics
      • • Sähköenergiatekniikan laitos
      Tammerfors, Province of Western Finland, Finland
  • 2002–2008
    • University of Strathclyde
      • Institute of Photonics
      Glasgow, SCT, United Kingdom
  • 2007
    • University of Bristol
      • Department of Electrical and Electronic Engineering
      Bristol, England, United Kingdom
  • 2003–2006
    • University Carlos III de Madrid
      • Department of Electronic Technology
      Getafe, Madrid, Spain
  • 2004
    • Wroclaw University of Technology
      • Institute of Physics
      Wrocław, Lower Silesian Voivodeship, Poland
  • 1982–2000
    • Northeastern University
      • Department of Physics
      Boston, MA, United States
  • 1998
    • Johannes Kepler University Linz
      • Institut für Experimentalphysik
      Linz, Upper Austria, Austria
    • University of Tampere
      Tammerfors, Province of Western Finland, Finland
  • 1996
    • Nokia Research Center (NRC)
      Helsinki, Southern Finland Province, Finland
  • 1979–1982
    • University of Turku
      Turku, Province of Western Finland, Finland
  • 1976–1978
    • University Hospital München
      München, Bavaria, Germany