J. Chen

University of Texas at Austin, Austin, TX, United States

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Publications (2)5.77 Total impact

  • X. Chen · S. Joshi · J. Chen · T. Ngai · S.K. Banerjee ·
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    ABSTRACT: We report the successful growth of MOS capacitor stacks with low temperature strained epitaxial Ge or Si<sub>1-x</sub>Ge<sub>x</sub>(x=0.9) layer directly on Si substrates, and with HfO<sub>2</sub>(EOT=9.7 Å) as high-κ dielectrics, both using a novel remote plasma-assisted chemical vapor deposition technique. These novel MOS capacitors, which were fabricated entirely at or below 400°C, exhibit normal capacitance-voltage and current-voltage characteristics.
    IEEE Transactions on Electron Devices 10/2004; 51(9-51):1532 - 1534. DOI:10.1109/TED.2004.833957 · 2.47 Impact Factor
  • T. Ngai · X. Chen · J. Chen · S. K. Banerjee ·
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    ABSTRACT: SiGe p-metal–oxide–silicon field-effect transistors (p-MOSFETs) were fabricated with ultrathin thin (∼20 Å) remote plasma chemical vapor deposition gate oxides deposited directly on SiGe. A low temperature water vapor annealing was used to improve the SiO2/SiGe interface and performance of SiGe p-MOSFETs. After the wet annealing, dangling Si and Ge bonds at the interface are passivated by atomic hydrogen, the threshold voltage of SiGe p-MOSFETs decreases from −0.39 to −0.20 V, the subthreshold slope from 117 to 87 mV/dec, and more than 20% output current enhancement is observed in these SiGe p-MOSFETs compared with Si control devices. © 2002 American Institute of Physics.
    Applied Physics Letters 03/2002; 80(10):1773-1775. DOI:10.1063/1.1445806 · 3.30 Impact Factor