M. Agostinelli,
J. Hicks,
J. Xu,
B. Woolery,
K. Mistry,
K. Zhang,
S. Jacobs,
J. Jopling,
W. Yang,
B. Lee, [......],
P. Kolar, Y. Wang,
J. Sandford,
D. Pivin,
C. Peterson,
M. DiBattista,
S. Pae,
M. Jones,
S. Johnson,
G. Subramanian
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ABSTRACT: Erratic bit phenomena have been reported in advanced flash memories, and have been attributed to trapping/detrapping effects that modify the threshold voltage. This paper describes for the first time the observance of erratic behavior in SRAM Vmin, defined as the minimum voltage at which the SRAM array is functional. Random telegraph signal (RTS) noise in the soft breakdown gate leakage is shown to be the cause. The erratic Vmin phenomenon can be eliminated for 90 nm SRAMs by process optimization. However, erratic Vmin behavior gets worse with smaller cell sizes and represents another constraint on the scaling of SRAM cells and on the minimum operating voltage of the SRAM array. A combination of process and circuit solutions will likely be needed to enable continued SRAM cell scaling
Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International; 01/2006
