Mohammad Reza Khanlary

Imam Khomeini International University, Kazvin, Qazvīn, Iran

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Publications (3)4.45 Total impact

  • M. R. Khanlary, E. Salavati
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    ABSTRACT: Physical vapor deposition of tin-doped lead selenide (Sn/PbSe) thin films on SiO2 glass is described. Interaction of high-energy Ar+ ions bombardment on the doped PbSe films is discussed by XRD analysis. The improvement of optical band gap of Sn/PbSe films irradiated by different doses of irradiation was studied using transmission spectroscopy.
    Advances in Condensed Matter Physics 01/2012; 2012. · 1.18 Impact Factor
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    Mohammad Reza Khanlary, Vahid Vahedi, Ali Reyhani
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    ABSTRACT: In this research high-quality zinc oxide (ZnO) nanowires have been synthesized by thermal oxidation of metallic Zn thin films. Metallic Zn films with thicknesses of 250 nm have been deposited on a glass substrate by the PVD technique. The deposited zinc thin films were oxidized in air at various temperatures ranging between 450 °C to 650 °C. Surface morphology, structural and optical properties of the ZnO nanowires were examined by scanning electron microscope (SEM), X-ray diffraction (XRD), energy dispersive X-ray (EDX) and photoluminescence (PL) measurements. XRD analysis demonstrated that the ZnO nanowires has a wurtzite structure with orientation of (002), and the nanowires prepared at 600 °C has a better crystalline quality than samples prepared at other temperatures. SEM results indicate that by increasing the oxidation temperature, the dimensions of the ZnO nanowires increase. The optimum temperature for synthesizing high density, ZnO nanowires was determined to be 600 °C. EDX results revealed that only Zn and O are present in the samples, indicating a pure ZnO composition. The PL spectra of as-synthesized nanowires exhibited a strong UV emission and a relatively weak green emission.
    Molecules 01/2012; 17(5):5021-9. · 2.43 Impact Factor
  • M.R. Khanlary, S. Isazadeh
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    ABSTRACT: In this Letter thin films of zinc oxide (ZnO) are prepared by sol-gel method and deposited on glass substrate to evaluate structural and optical properties of the film. The films were grown at different thicknesses in the range of 100-180-nm. The properties of layers were characterised using X-ray diffractometer (XRD), atomic force microscope (AFM) and optical spectrophotometer to evaluate the quality of the thin film for photovoltaic applications. The results from XRD pattern revealed that the grown films exhibit wurtzite structure with (002) preferential plane. The results from AFM data revealed that the films had nano-sized grains with a grain size from-25 to 60-nm depending on the film thickness. The optical spectrophotometer studies exhibited direct allowed transition with an energy bandgap of 3.12-3.02-eV for films with thicknesses of 100-180-nm, respectively. The refractive index as well as extinction coefficient of films was also measured.
    Micro & Nano Letters 10/2011; · 0.85 Impact Factor