P. Chaumas

Publications (3)0 Total impact

• Conference Proceeding: Power GaInP/GaAs HBT MMICs

  S.L. Delage, D. Floriot, H. Blanck, S. Cassette, E. Chartier, M.-A. diForte-Poisson, C. Brylinski, Y. Perreal, D. Pons, P. Roux, P. Bourne, P. Chaumas
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  ABSTRACT: GaInP/GaAs HBT technology is an excellent alternative to GaAlAs/GaAs HBTs. We present new X-Band power results both on discrete devices and on MMICs obtained using this new type of HBT. 12-2×30-¿m2 finger discrete devices show an output power of 1W at 10 GHz with a power added efficiency of 43% under near class A bias conditions. The dependence of the power gain on the HBT topology has been simulated and that predicts precisely the device performances. First power amplifier MMICs have been produced by Thomson-CSF. Those MMIC amplifiers achieve an output power above 1 W at 10 GHz under both CW and pulsed conditions. The power gain is higher than 12dB at 10 GHz. At the same RF frequency, the power added efficiency reaches 35% and 25% under pulsed conditions (3 ¿s, 10% duty cycle) and CW respectively. These first results are promising, and improved results are expected soon by tuning the output matching network and using higher gain devices.
  Microwave Conference, 1994. 24th European; 10/1994
• Conference Proceeding: High Efficiency C-band Monolithic Power Amplifiers

  L. Telliez, P. Chaumas, S. Marcillaud, E. Watrin
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  ABSTRACT: This paper describes the design, fabrication and measured performances of C-band monolithic two-stage and three-stage amplifiers. These two on-chip fully matched versions designed for class-AB operation demonstrate 7 Watt output power over the 5 - 6 GHz frequency range with associated power added efficiency higher than 30% and gains of respectively 20 and 29 dB.
  Microwave Conference, 1994. 24th European; 10/1994
• Conference Proceeding: GaAs Monolithic Balanced Mixer for C Band Direct Demodulation Receiver

  I. Telliez, P. Chaumas, C. Rumelhard, G. Pataut
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  ABSTRACT: This paper describes the performances of a GaAs monolithic balanced mixer for C band direct demodulation receiver front-end. Direct demodulation implies design choices, such as the use of Schottky diodes and a 180° balanced configuration. The coupler used is a monolithic solution of a rat-race hybrid, synthetised with lumped element low-pass and high-pass networks. The circuit, with a size of 1.5 × 2. mm2, exhibits a conversion loss of less than 7.5 dB for signal and LO frequencies from 6.5 GHz up to 9 GHz, and for IF frequencies from 10 to 100 MHz.
  Microwave Conference, 1989. 19th European; 10/1989