ABSTRACT: A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm<sup>2</sup>. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International; 03/2007