B. Marholev,
M. Pan,
E. Chien,
L. Zhang,
R. Roufoogaran,
S. Wu,
I. Bhatti,
T.-H. Lin,
M. Kappes,
S. Khorram, [......],
H. Jensen,
H. Kim,
P. Lettieri,
S. Mak,
J. Lin, Y.C. Wong,
R. Lee,
M. Syed,
M. Rofougaran,
A. Rofougaran
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ABSTRACT: A low-power single-chip Bluetooth EDR device is realized using a configurable transformer-based RF front-end, a low-IF receiver and direct-conversion transmitter architecture. It is implemented in a 0.13mum CMOS process and occupies 11.8mm<sup>2</sup>. Sensitivity for 1, 2 and 3Mb/s rates is -88, -90, and -84dBm and transmitter differential EVM is 5.5% rms.
Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International; 03/2007
