C.C. Hung,
Y.S. Chen,
D.Y. Wang,
Y.J. Lee,
W.C. Chen,
Y.H. Wang,
C.T. Yen,
S.Y. Yang,
K.H. Shen,
C.P. Chang,
C.S. Lin,
K.L. Su,
H.C. Cheng, Y.J. Wang,
D.D.-L. Tang,
M.-J. Tsai,
M.J. Kao
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ABSTRACT: A novel orthogonal wiggle cell for either adjacent-reference architecture or self-reference architecture is proposed to enhance the read/write operation of MRAM. With reliability and non-disturbance of the device being verified, the mass production of MRAM is feasible because of the stabilized functionality and improved performance
Electron Devices Meeting, 2006. IEDM '06. International; 01/2007