R.E. Jones,
S.G. Thomas,
S. Bharatan,
R. Thoma,
C. Jasper,
T. Zirkle,
N.V. Edwards,
R. Liu,
X.D. Wang,
Q. Xie, C. Rosenblad,
J. Ramm,
G. Iselle,
H. von Kanel,
J. Oh,
J.C. Campbell
[show abstract]
[hide abstract]
ABSTRACT: Photodetectors were fabricated in a heteroepitaxial Ge-on-Si deposited by low energy plasma enhanced CVD. Dark current density of 4.6 nA/μm, 49 % quantum efficiency, and a -3 dB bandwidth of 3.5 GHz were measured at 1.3 μm wavelength and -3 V bias. Numerical simulations predict device modifications can achieve 10 Gbps (≅ 7 GHz) bandwidth.
Electron Devices Meeting, 2002. IEDM '02. International; 02/2002
