ABSTRACT: We present the realization of a novel three-terminal electronic switch using phase-change (PC) chalcogenide material. This device subdivides a single PC switch into a parallel array of three-terminal subvias which are addressed with atomic-force-microscopy cantilever probes. This subdivision reduces the required switching current to acceptable levels. Vias of Ge<sub>50</sub>Sb<sub>50</sub> are demonstrated in this switch topology and are switched between high- and low-resistance states. The vias show an off/on resistance ratio of approximately 100Ã, which can be applied in radio-frequency switching applications. This dynamic range is 10Ã less than that observed in sheet films of this material, with the main loss being a reduction in resistivity between the sheet-film off-state and the device off-state. The device off -state resistivity is similar in the as-fabricated state and the reamorphized state.
IEEE Transactions on Electron Devices 02/2010; · 2.32 Impact Factor