A. Regreny

Publications (2)7.54 Total impact

• Article: Smooth, pseudosmooth, and rough GaAs/AlxGa1-xAs interfaces: Effect of substrate misorientation

  J. Massies, C. Deparis, C. Neri, G. Neu, Y. Chen, B. Gil, P. Auvray, A. Regreny
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  ABSTRACT: GaAs/Al x Ga 1-x As quantum well and superlattice structures have been grown at 600 °C by molecular beam epitaxy on GaAs (001) substrates exactly oriented or slightly misoriented towards (111) Ga and (111) As. It is shown that for the growth conditions used, the step orientation (nature) has a striking influence on the photoluminescence (PL) features of the grown structures: steps along [1¯10] (Ga‐type steps) lead to sharp PL lines (pseudosmooth interfaces), while a considerable broadening of the PL (rough interfaces) is obtained when the steps are along [110] (As‐type steps).
  Applied Physics Letters 01/1990; · 3.84 Impact Factor
• Source

  Available from: P. Lefebvre

  Article: Differential spectroscopy of GaAs-Ga1-xAlxAs quantum wells: an unambiguous identification of light-hole and heavy-hole states.

  H. Mathieu, P. Lefebvre, J. Allègre, B. Gil, A. Regreny
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  ABSTRACT: We present differential photoluminescence and reflectivity studies of GaAs-Ga1-xAlxAs quantum wells, using both wavelength-modulation and piezomodulation techniques. Our experiments permit unambiguous identification of light- and heavy-hole exciton transitions.
  Physical Review B 10/1987; 36(12):6581. · 3.69 Impact Factor