Wenwei Yang

Publications (2)0 Total impact

• Conference Proceeding: Engineering of S/D Lateral Diffusion for DG-FETs Based on Full Quantum Analysis

  Wenwei Yang, Zhiping Yu, Lilin Tian
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  ABSTRACT: In this work, the dominant quantum effects in nano devices are investigated by the full quantum simulation based on the QDAME algorithm, which is suitable to analyze the quantum open system. Compared with the classical drift-diffusion mechanism, the full quantum simulation predicts that due to the carrier tunneling from source to drain in off-state, the control of source/drain (S/D) lateral diffusion becomes more crucial in nano devices to suppress the short-channel-effects (SCEs) and reduce the off-state leakage current. Considering the induced S/D-gate capacitance, a practical method is also proposed to optimize the lateral diffusion length
  Solid-State and Integrated Circuit Technology, 2006. ICSICT '06. 8th International Conference on; 11/2006
• Source

  Available from: edu.cn

  Conference Proceeding: Analysis of GIDL Dependence on STI-induced Mechanical Stress

  Wenwei Yang, Guoxuan Qin, Xue Shao, Zhiping Yu, Lilin Tian
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  ABSTRACT: The mechanical stress induced by shallow trench isolation (STI) signifilcantly affects the device behavior in the advanced CMOS technology. This paper presents an STI-dependent gate-induced drain leakage (GIDL) model and investigates the physical mechanisms in this phenomenon. Our simulation indicates that STI-induced compressive stress causes energy band gap narrowing. As a consequence, the effective tunneling barrier height becomes lower and intrinsic carrier concentration increases. These two factors enhance band-to-band tunneling (BBT) and trap-assisted tunneling (TAT), respectively. And an asymmetric layout is proposed to reduce the GIDL current.
  Electron Devices and Solid-State Circuits, 2005 IEEE Conference on; 01/2006