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ABSTRACT: Deep level characterization of Si‐doped AlGaAs layers and the interface of selectively doped N‐AlGaAs/GaAs heterojunctions grown by MBE is reported. Three electron traps have been detected by DLTS in AlGaAs layers and in N‐AlGaAs/GaAs heterostructures. Two of them are the main dominant levels in the bulk of Si‐doped AlGaAs, which are identified as the well known DX centers. The remaining one shows a peak in concentration near the AlGaAs side of the heterojunction interface in the N‐AlGaAs/GaAs structure and is identified as one of the DX related levels. The effect of these levels on the mobility of electron gas at the N‐AlGaAs/GaAs heterojunction is investigated.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures: processing, measurement, and phenomena: an official journal of the American Vacuum Society 08/1985; · 1.34 Impact Factor
