G. Bidal,
F. Boeuf,
S. Denorme,
N. Loubet,
J.L. Huguenin,
P. Perreau,
D. Fleury,
F. Leverd, S. Lagrasta,
S. Barnola,
T. Salvetat,
B. Orlando,
R. Beneyton,
L. Clement,
R. Pantel,
S. Monfray,
G. Ghibaudo,
T. Skotnicki
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ABSTRACT: We report a new nanodot MOSFET, based on the use of Bulk wafer and Silicon-On-Nothing technology, requiring neither CMP nor extra photo-lithographic step. SRAM-application oriented nanodot devices were fabricated using this new process. Record performance among the nanometric gate-all-around MOSFET state-of-the-art is obtained thanks to a high quality transport.
VLSI Technology, 2009 Symposium on; 07/2009
