Publications (2)5.23 Total impact

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    ABSTRACT: The conventional continuous scan and Delay- ID , lin methods of negative bias temperature instability characterization are not applicable for polycrystalline silicon thin-film transistors due to significant recovery effect and mobility degradation, respectively. An improved on-the-fly (OTF) method is proposed to simultaneously extract the threshold voltage shift and mobility degradation. In addition, the improved OTF method is more accurate than the continuous scan due to less recovery effect. The exponents of reaction-diffusion mechanism can be clearly determined using the new method.
    IEEE Transactions on Electron Devices 12/2010; 57(11-57):3186 - 3189. DOI:10.1109/TED.2010.2068550 · 2.47 Impact Factor
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    ABSTRACT: A capacitorless single-transistor (1T) memory cell with a long data-retention time is demonstrated on polycrystalline silicon thin-film transistors (TFTs). A new operation mode using channel traps is employed to modulate the drain current in the accumulation region. The different drain current can be read by modulating the barrier height at the grain boundary. The extrapolated retention time at the half of the current window is ~10<sup>7</sup> s. There is no degradation after 2000 write/erase cycles by trap-assisted tunneling programming. The low-temperature process of the TFT cells is attractive for the 3-D integration.
    IEEE Electron Device Letters 11/2010; 31(10-31):1125 - 1127. DOI:10.1109/LED.2010.2057406 · 2.75 Impact Factor